A magnetic domain wall displacement type magnetic recording element including a first ferromagnetic layer including a ferromagnetic material, a magnetic recording layer configured to extend in a first direction crossing a laminating direction of the first ferromagnetic layer and including a magnetic domain wall, and a nonmagnetic layer sandwiched between the first ferromagnetic layer and the magnetic recording layer, wherein the first ferromagnetic layer has a magnetic flux supply region at least at a first end in the first direction.

A spin current magnetization rotational element includes: a first ferromagnetic metal layer having a variable magnetization direction; and a spin orbital torque wiring which is joined to the first ferromagnetic metal layer and extends in a direction crossing a direction perpendicular to a plane of the first ferromagnetic metal layer, wherein the spin orbital torque wiring is constituted of a non-magnetic material composed of elements of two or more kinds and a compositional proportion of the non-magnetic material has a non-uniform distribution between a first surface joined to the first ferromagnetic metal layer and a second surface located on a side opposite to the first surface.

A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic layer, and at least one of a first nonmagnetic insertion layer provided directly on a lower surface of the nonmagnetic layer and a second nonmagnetic insertion layer provided directly on an upper surface of the nonmagnetic layer. The first nonmagnetic insertion layer and the second nonmagnetic insertion layer include an Ag alloy represented by General Formula (1): Ag.sub.X.sub.1- where X indicates one element selected from the group consisting of Al, Cu, Ga, Ge, As, Y, La, Sm, Yb, and Pt, and 0<<1.

A magnetic structure includes a magnetic tunnel junction based on a synthetic antiferromagnetic free layer which is regulated by an electric field, and a spin-orbit layer located below the magnetic tunnel junction. The transformation from the antiferromagnetic coupling to the ferromagnetic coupling of the free layer based on a synthetic antiferromagnetic multilayer structure is controlled by an electric field. A spin-orbit torque magnetic random access memory, which includes the magnetic structure, is able to realize stable data writing under the combined interaction of electric field and current, and has advantages of simple structure for scaling, ultralow power consumption, ultrahigh speed of switching, radiation resistance and non-volatility.

The present disclosure generally relates to magnetoresistive (MR) devices. The MR device comprises a synthetic antiferromagnetic (SAF) layer that increases exchange coupling field, and in turn, less magnetic noise of such devices. The MR device comprises a first ferromagnetic (FM1) layer and a second ferromagnetic (FM2) layer, in between which is an SAF spacer of RuAl alloy having a B2 crystalline structure which may grow epitaxial on BCC (110) or FCC (111) textures, meaning that the (110) or (111) plane is parallel to the surface of MR device substrate. Further, amorphous layers may be inserted into the device structure to reset the growth texture of the device to a (001), (110), or (111) texture in order to promote the growth of tunneling barrier layers or antiferromagnetic (AF) pinning layers.

A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1):

Co.sub.2Fe.sub.X.sub.(1)

(in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and and represent numbers that satisfy 2.3+, <, and 0.5<1.9).

A magnetoresistive effect element includes: a first ferromagnetic layer as a magnetization fixed layer; a second ferromagnetic layer as a magnetization free layer; and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer. The nonmagnetic spacer layer includes a nonmagnetic metal layer formed of Ag, and at least one of a first nonmagnetic insertion layer provided on a lower surface of the nonmagnetic metal layer and a second nonmagnetic insertion layer provided on an upper surface of the nonmagnetic metal layer. The first nonmagnetic insertion layer and the second nonmagnetic insertion layer include an Ag alloy, and thereby lattice mismatch between the nonmagnetic spacer layer, and the first ferromagnetic layer and/or the second ferromagnetic layer is reduced, compared to lattice mismatch when the entire nonmagnetic spacer layer is formed of Ag.

A stress sensor includes a stress detection layer including a laminated body including a first magnetic layer, a first non-magnetic layer, and a second magnetic layer that are laminated, wherein the first magnetic layer and the second magnetic layer have mutually different magnetoelastic coupling constants, such that a stress is detected by an electrical resistance dependent on a relative angle of magnetization between the first magnetic layer and the second magnetic layer varying depending on the stress externally applied.

A magnetoresistive effect device including a magnetoresistive effect element with which a high-frequency filter can be realized is provided. Magnetoresistive effect device includes: at least one magnetoresistive effect element including a magnetization fixed layer, spacer layer, and magnetization free layer in which magnetization direction is changeable; first and second port; signal line; and direct-current input terminal. First and second ports are connected to each other via signal line. Magnetoresistive effect element is connected to signal line and is to be connected to ground in parallel to second port. Direct-current input terminal is connected to signal line. A closed circuit including magnetoresistive effect element, signal line, ground, and direct-current input terminal is to be formed.

Disclosed is a force sensor. More particularly, the force sensor includes a first permanent magnet layer; a magnetic tunnel junction disposed on the first permanent magnet layer and configured to have a preset resistance value; and a second permanent magnet layer disposed to be spaced apart from the magnetic tunnel junction, wherein the second permanent magnet layer moves in a direction of the first permanent magnet layer when pressure is applied from outside, the preset resistance value of the magnetic tunnel junction is changed when a magnetic field strength formed between the first permanent magnet layer and the second permanent magnet layer becomes a preset strength or more according to movement of the second permanent magnet layer, and the force sensor senses the pressure based on a change in the preset resistance value.