Disclosed is a system (10) for generating skyrmions, including: a gun (12) including a wall-forming region (14) made from a first material, the region (14) defining an outer space (16) made from a second material different from the first material and an inner space (18) made from a third material different from the first material, the second material and the third material being magnetic materials; and a magnetization reversal device (26) that can reverse the magnetization at the interface between the region (14) and the inner space (18).

A magnetoresistive effect device including a magnetoresistive effect element with which a high-frequency filter can be realized is provided. Magnetoresistive effect device includes: at least one magnetoresistive effect element including a magnetization fixed layer, spacer layer, and magnetization free layer in which magnetization direction is changeable; first and second port; signal line; and direct-current input terminal. First and second ports are connected to each other via signal line. Magnetoresistive effect element is connected to signal line and is to be connected to ground in parallel to second port. Direct-current input terminal is connected to signal line. A closed circuit including magnetoresistive effect element, signal line, ground, and direct-current input terminal is to be formed.

A non-collinear magnetoresistive device, includes: a free layer; a fixed layer; and a non-magnetic layer disposed between the free layer and the fixed layer, wherein the fixed layer has an easy magnetization direction in an in-plane direction or in a perpendicular direction, the free layer satisfies at room temperature expressions (1) and (2) below:

E.sub.RT?1.66?10.sup.?19 J(1)

V?5?10.sup.4 nm.sup.3(2)

where E.sub.RT=(K.sub.u1,eff+K.sub.u2+K.sub.u1,eff.sup.2/4K.sub.u2)?V, K.sub.u1,eff: an effective first-order anisotropy constant, K.sub.u2: a second-order anisotropy constant, and V: a volume, and wherein the free layer is in a cone magnetization state.

A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3d orbitals.

A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5 d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3 d orbitals.

A spin valve element may include a plurality of magnetic element groups. Each magnetic element group may be formed, at least in part, by a plurality of magnetic elements being connected in parallel. Each magnetic element may include an intermediate layer and a pair of ferromagnetic layers sandwiching the intermediate layer. The plurality of magnetic element groups may be connected together in series or in parallel. The plurality of magnetic elements may be configured to undergo a microwave oscillation and are placed in proximity sufficient that oscillation signals are configured to be generated with the magnetic elements mutually synchronized. The proximity may include a range equal to a wavelength of the microwave oscillation.

A magnetic sensor with increased sensitivity, lower noise, and improved frequency response is described. The sensor's free layer is ribbon shaped and is closely flanked at each long edge by a ribbon of magnetically soft, high permeability material. Side stripes of soft magnetic material absorb external field flux and concentrate the flux to flow into the sensor's edges to promote larger MR sensor magnetization rotation. Side stripes are located in the plane of the free layer at a maximum distance of 0.1 microns from each side of the free layer. The free layer has a width <300 nm, a length of >1 micron, and an aspect ratio (thickness/width) of at least 5. Preferably, M.sub.filmt.sub.film>M.sub.freet.sub.free, where M.sub.film and M.sub.free are the magnetization of the soft magnetic layers and free layer, respectively, and f.sub.film and t.sub.free are the thickness of the soft magnetic layers and free layer, respectively.

The present disclosure generally relates to magnetoresistive (MR) devices. The MR device comprises a synthetic antiferromagnetic (SAF) layer that increases exchange coupling field, and in turn, less magnetic noise of such devices. The MR device comprises a first ferromagnetic (FM1) layer and a second ferromagnetic (FM2) layer, in between which is an SAF spacer of RuAl alloy having a B2 crystalline structure which may grow epitaxial on BCC (110) or FCC (111) textures, meaning that the (110) or (111) plane is parallel to the surface of MR device substrate. Further, amorphous layers may be inserted into the device structure to reset the growth texture of the device to a (001), (110), or (111) texture in order to promote the growth of tunneling barrier layers or antiferromagnetic (AF) pinning layers.

A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1):
Co.sub.2Fe.sub.X.sub.(1)
(in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and and represent numbers that satisfy 2.3+, <, and 0.5<1.9).

A laminating structure includes a first magnetic layer, a second magnetic layer, a first spacer disposed between the first and second magnetic layers and a second spacer disposed on the second magnetic layer.