A magnetic memory device includes a conductive line extending in a first direction, a magnetic line extending in a second direction intersecting the first direction on the conductive line, the magnetic line intersecting the conductive line, and a magnetic pattern disposed between the conductive line and the magnetic line. The magnetic pattern has first sidewalls opposite to each other in the first direction, and second sidewalls opposite to each other in the second direction. The second sidewalls of the magnetic pattern are aligned with sidewalls of the conductive line, respectively.

A light detection element includes: a plurality of magnetic elements, wherein each of the magnetic elements includes a first ferromagnetic layer that is irradiated with light and a second ferromagnetic layer and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, and wherein at least two of the magnetic elements are arranged to be inside a spot of the light applied to the first ferromagnetic layers of the at least two of the magnetic elements.

This spin element includes: a current-carrying part that extends in a first direction; and an element part that is laminated on one surface of the current-carrying part, wherein the current-carrying part includes a first wiring and a second wiring in order from a side of the element part, and wherein both of the first wiring and the second wiring are metals and temperature dependence of resistivity of the first wiring is larger than temperature dependence of resistivity of the second wiring in at least a temperature range of −40° C. to 100° C.

A method for configuring a reconfigurable physical unclonable function (PUF) based on a device with spin-orbit torque (SOT) effect is provided. The disclosure uses SOT or magnetic field to change the magnetic moment. After the current or magnetic field is removed, the magnetic moment returns to the easy axis direction. Under the effect of thermal fluctuation, the magnetic moment is randomly oriented in the easy axis direction. The non-volatile devices are formed into an array, the magnetic moments of all non-volatile devices are randomly distributed after a write operation. The read state can be used as a random code to implement the reconfigurable PUF. The PUF has a simple structure and guarantees security. The random code in the disclosure may be two-state or multi-state, which is related to the number of magnetic domains of the ferromagnetic layer. A large number of challenge response pairs form a strong PUF.

One illustrative MRAM cell disclosed herein includes a bottom electrode, a top electrode positioned above the bottom electrode and an MTJ (Magnetic Tunnel Junction) element positioned above the bottom electrode and below the top electrode. In this example, the MTJ element includes a bottom insulation layer positioned above the bottom electrode, a top insulation layer positioned above the bottom electrode; and a first ferromagnetic material layer positioned between the bottom insulation layer and the top insulation layer.

The present disclosure generally relate to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a topological insulator (TI) modulation layer. The TI modulation layer comprises a plurality of bismuth or bismuth-rich composition modulation layers, a plurality of TI lamellae layers comprising BiSb having a (012) crystal orientation, and a plurality of texturing layers. The TI lamellae layers comprise dopants or clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material. The clusters of atoms are configured to have a grain boundary glass forming temperature of less than about 400° C. Doping the TI lamellae layers comprising BiSb having a (012) crystal orientation with clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material enable the SOT MTJ device to operate at higher temperatures while inhibiting migration of Sb from the BiSb of the TI lamellae layers.

A magnetoelectric memory device includes a magnetic tunnel junction located between a first electrode and a second electrode. The magnetic tunnel junction includes a reference layer, a nonmagnetic tunnel barrier layer, a free layer, and a dielectric capping layer. At least one layer that provides voltage-controlled magnetic anisotropy is provided within the magnetic tunnel junction, which may include a pair of nonmagnetic metal dust layers located on, or within, the free layer, or a two-dimensional metal compound layer including a compound of a nonmagnetic metallic element and a nonmetallic element.

A memory system may include a magnetic tunnel junction stack, a first high resistance tunnel barrier, and a first voltage controlled magnetic anisotropy write layer. The first voltage controlled magnetic anisotropy write layer may be adjacent the high resistance tunnel barrier, and the voltage controlled magnetic anisotropy write line may include a magnetic material in direct contact with a high resistance tunnel barrier.

A magnetoresistive sensor has a sensor plane in which the magnetoresistive sensor is sensitive to a magnetic field. The magnetoresistive sensor includes a reference layer having a reference magnetization that is fixed and that is aligned with an in-plane axis of the sensor plane; and a magnetic free layer disposed proximate to the reference layer, the magnetic free layer having a free layer magnetization aligned along an out-of-plane axis that is out-of-plane to the sensor plane. The free layer magnetization is configured to tilt away from the out-of-plane axis and towards the sensor plane in a presence of an external in-plane magnetic field.

A magnetoresistive stack includes a reference layer including a magnetic layer, an antiferromagnetic layer in exchange coupling with the magnetic layer, a magnetic layer substantially of the same magnetisation as the magnetic layer, a spacer layer between the magnetic layers with a thickness for enabling an antiferromagnetic coupling between the magnetic layers of a first coupling intensity, a free layer having a coercivity of less than 10 microTesla, the free layer including a magnetic layer, an antiferromagnetic layer in exchange coupling with the magnetic layer, a magnetic layer substantially of the same magnetisation as the magnetic layer, a spacer layer between the magnetic layers with a thickness for enabling an antiferromagnetic coupling between the magnetic layers of a second coupling intensity lower than the first coupling intensity, a third spacer layer separating the reference and free layers.