A tunnel magnetoresistance effect (TMR) device includes an exchange coupling film having a first ferromagnetic layer, which is at least a portion of a fixed magnetic layer, and an antiferromagnetic layer laminated on the first ferromagnetic layer. The ferromagnetic layer includes an X(Cr—Mn) layer containing one or two or more elements X selected from the group consisting of the platinum group elements and Ni, and also containing Mn and Cr. The X(Cr—Mn) layer has a first region relatively near the first ferromagnetic layer, and a second region relatively far away from the first ferromagnetic layer, and the content of Mn in the first region is higher than that in the second region.

A magnetic sensor device having a spin-valve-type magnetoresistive effect element and capable of stably applying a bias magnetic field on the free layer of the magnetoresistive effect element includes a spin-valve-type magnetoresistive effect element, a substrate on which the magnetoresistive effect element is positioned, a power source that supplies a substantially constant electric current applied on the magnetoresistive effect element, and a magnetic field generator that is connected to the electric current path of the electric current applied on the magnetoresistive effect element in series. The magnetic field generator is provided to be capable of applying a bias magnetic field on at least a portion of the magnetoresistive effect element. The magnetic field generator is close to a portion of the magnetoresistive effect element and is positioned at a different level from the substrate.

A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

Disclosed is logic device using spin orbit torque. Two magnetic tunnel junctions have mutually opposite magnetization directions. The direction of the current flowing through the non-magnetic metal layer acts as an input, and the resistance states of the magnetic tunnel junctions are determined by the input program currents. Various logic devices are implemented by a method of setting the input program current to a logic high or a logic low.

A reconfigurable PUF device based on fully electric field-controlled domain wall motion includes a voltage control layer, upper electrodes, a lower electrode, antiferromagnetic pinning layers, and a magnetic tunnel junction (MTJ). The MTJ includes, from bottom to top, a ferromagnetic reference layer, a potential barrier tunneling layer and a ferromagnetic free layer. In the device, an energy potential well is formed in a middle portion of the ferromagnetic free layer by applying a voltage to the voltage control layer to control magnetic anisotropy, and a current is fed into either of the upper electrodes to drive generation of the magnetic domain walls and pin the magnetic domain walls to the potential well. After the voltage is removed, the potential well is lowered so that the magnetic domain walls are in a metastable state, thereby either a high resistance state or a low resistance state is randomly obtained.

A magnetoresistive element comprises a nonmagnetic nano-current-channel (NCC) structure provided on a surface of the magnetic recording layer, which is opposite to a surface of the magnetic recording layer where the tunnel barrier layer is provided, and comprising a spatial distribution of perpendicular conducting channels throughout the NCC structure thickness and surrounded by an insulating medium, making the magnetic recording layer a magnetically soft-hard composite structure. Correspondingly, the critical write current and write power are reduced with reversal modes of exchange-spring magnets of the magnetically soft-hard composite structure.

A memory device comprises an interconnect comprises a spin orbit coupling (SOC) material. A free magnetic layer is on the interconnect, a barrier material is over the free magnetic layer and a fixed magnetic layer is over the barrier material, wherein the free magnetic layer comprises an antiferromagnet. In another embodiment, memory device comprises a spin orbit coupling (SOC) interconnect and an antiferromagnet (AFM) free magnetic layer is on the interconnect. A ferromagnetic magnetic tunnel junction (MTJ) device is on the AFM free magnetic layer, wherein the ferromagnetic MTJ comprises a free magnet layer, a fixed magnet layer, and a barrier material between the free magnet layer and the fixed magnet layer.

The magnetic sensor can prevent an increase of a positional detection error of a subject/object even in the case of applying an external magnetic field with a magnetic field intensity exceeding a predetermined range. A magnetic sensor is equipped with a magnetoresistive effect element (MR element) 11 that can detect an external magnetic field and a soft magnetic body shield 12. The soft magnetic body shield(s) 12 are/is positioned above and/or below the MR element 11 in a side view, and the size of the MR element 11 is physically included within a perimeter of the soft magnetic body shield 12.

The present invention relates to a kind of magnetic heterojunction structure and the method of controlling and achieving spin logic and multiple-state storage functions. The said single magnetic heterojunction structure comprises the substrate, in-plane anti-ferromagnetic layer, in-plane ferromagnetic layer, nonmagnetic layer, vertical ferromagnetic layer, and vertical anti-ferromagnetic layer respectively from the bottom up; the said in-plane ferromagnetic layer and the said vertical ferromagnetic layer are coupled together through the said nonmagnetic layer in the middle; in-plane exchange biases, namely exchange biases in the plane, exist between the said in-plane ferromagnetic layer and the said in-plane anti-ferromagnetic layer, and out-of-plane exchange biases, namely exchange biases out of the plane, exist between the said vertical ferromagnetic layer and the said vertical anti-ferromagnetic layer.

A magnetic sensor includes a magnetoresistive effect element having a sensitivity axis in a specific direction. The magnetoresistive effect element has on a substrate, a laminate structure in which a fixed magnetic layer and a free magnetic layer are laminated with a nonmagnetic material layer interposed therebetween and includes at a side of the free magnetic layer apart from the nonmagnetic material layer, a first antiferromagnetic layer which generates an exchange coupling bias with the free magnetic layer and aligns a magnetization direction thereof in a predetermined direction in a magnetization changeable state. The free magnetic layer includes a first ferromagnetic layer in contact with the first antiferromagnetic layer to be exchange-coupled therewith and a magnetic adjustment layer at a side of the first ferromagnetic layer apart from the first antiferromagnetic layer. The magnetic adjustment layer contains at least one iron group element and at least one platinum group element.