A device having a spin valve layer sequence, wherein the spin valve layer sequence includes a first magnetic layer having a variable direction of magnetization, a second magnetic layer having a fixed direction of magnetization, and a stabilization layer for stabilizing the fixed direction of magnetization of the second magnetic layer, wherein the stabilization layer includes a precious metal-free antiferromagnet.

A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

A spin orbit logic device includes: a first electrically conductive layer; a layer including a magnetoelectric material (ME layer) on the first electrically conductive layer; a layer including a ferromagnetic material with in-plane magnetic anisotropy (FM layer) on the ME layer; a second electrically conductive layer on the FM layer; a layer including a dielectric material on the second electrically conductive layer (coupling layer); a layer including a spin orbit coupling material (SOC layer) on the coupling layer; and a layer including a ferromagnetic material with perpendicular magnetic anisotropy (PMA layer) on the SOC layer.

The disclosed technology relates generally to the field of magnetic devices, in particular to magnetic memory devices or logic devices. The disclosed technology presents a magnetic structure for a magnetic device, wherein the magnetic structure comprises a magnetic reference layer (RL); a spacer provided on the magnetic RL, the spacer comprising a first texture breaking layer provided on the magnetic RL, a magnetic bridge layer provided on the first texture breaking layer, and a second texture breaking layer provided on the magnetic bridge layer. Further, the magnetic structure comprising a magnetic pinned layer (PL) or hard layer (HL) provided on the spacer, wherein the magnetic RL and the magnetic PL or HL are magnetically coupled across the spacer through direct exchange interaction.

An apparatus is provided which comprises: a magnetic junction including: a stack of structures including: a first structure comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to an x-y plane of a device, wherein the first structure has a first dimension along the x-y plane and a second dimension in the z-plane, wherein the second dimension is substantially greater than the first dimension. The magnetic junction includes a second structure comprising one of a dielectric or metal; and a third structure comprising a magnet with fixed PMA, wherein the third structure has an anisotropy axis perpendicular to the plane of the device, and wherein the third structure is adjacent to the second structure such that the second structure is between the first and third structures; and an interconnect adjacent to the third structure, wherein the interconnect comprises a spin orbit material.

A photonic spin register includes: a shift register unit including a magnetic material layer having a shape extending in one direction; and a write unit configured to write spin information into a magnetic domain in the magnetic material layer by transferring information included in an optical signal that is a pulse amplitude-modulated and serial input signal, to a spin state of the magnetic domain in the magnetic material layer by means of a photocurrent corresponding to the optical signal or by irradiation with the optical signal. When a shift current flows through the shift register unit in the one direction, a domain wall is configured to move in the magnetic material layer, thereby allowing the spin information to move and be buffered in the magnetic material layer.

A method for forming a magnetic memory device is disclosed. At least one magnetic tunneling junction (MTJ) stack is formed on the substrate. The MTJ stack comprises a reference layer, a tunnel barrier layer and a free layer. A top electrode layer is formed on the MTJ stack. A patterned sacrificial layer is formed on the top electrode layer. The MTJ stack is then subjected to a MTJ patterning process in a high-density plasma chemical vapor deposition (HDPCVD) chamber, thereby sputtering off the MTJ stack not covered by the patterned sacrificial layer. During the MTJ patterning process, sidewalls of layers or sub-layers of the MTJ stack are simultaneously passivated in the HDPCVD chamber by depositing a sidewall protection layer.

A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

A stacked structure is positioned on a nonmagnetic metal layer. The stacked structure includes a ferromagnetic layer and an intermediate layer interposed between the nonmagnetic metal layer and the ferromagnetic layer. The intermediate layer includes a NiAlX alloy layer represented by Formula (1): Ni.sub.γ1Al.sub.γ2X.sub.γ3 . . . (1), [X indicates one or more elements selected from the group consisting of Si, Sc, Ti, Cr, Mn, Fe, Co, Cu, Zr, Nb, and Ta, and satisfies an expression of 0<γ<0.5 in a case of γ=γ3/(γ1+γ2+γ3)].

A spin-orbit-torque magnetization rotational element and a spin-orbit-torque magnetoresistance effect element capable of easily rotating or reversing magnetization of a ferromagnetic layer. The spin-orbit-torque magnetization rotational element includes spin-orbit-torque wiring and a first ferromagnetic layer laminated on the spin-orbit-torque wiring in a first direction, wherein the spin-orbit-torque wiring includes a first region extending in a second direction, a second region extending in a third direction different from the second direction, and an intersection region where the first region and the second region intersect, and wherein the first ferromagnetic layer and the intersection region at least partially overlap in a plan view from the first direction.