A storage element and storage devices containing the same, having a layered structure and being configured for storing information are disclosed. In one example, the storage element comprises a storage portion with a storage magnetization that is perpendicular to a film surface of the layered structure, wherein a direction of the storage magnetization is configured to change according to the information. The storage element also includes a fixed magnetization portion with reference magnetization serving as a reference to the storage magnetization, and an intermediate portion between the storage portion and the fixed magnetization portion that is made of a non-magnetic material. The fixed magnetization portion includes a laminated ferrimagnetic structure that comprises a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The fixed magnetization portion includes a first magnetic material that is an alloy or a laminated structure including Pt, Co, and Y.

According to one embodiment, a magnetic memory element includes a stacked structure. The stacked structure includes a first and a second stacked member. The first stacked member includes a first and second ferromagnetic layer. A magnetic resonance frequency of the second ferromagnetic layer is a first frequency. A direction of a magnetization of the second ferromagnetic layer is settable to a direction of a first current when a magnetic field of the first frequency is applied to the first stacked member and the first current flows in the first stacked member. The direction of the magnetization of the second ferromagnetic layer does not change when the second current smaller than the first current flows in the first stacked member. The second stacked member includes a third ferromagnetic layer. A magnetization of the third ferromagnetic layer can generate a magnetic field of the first frequency by the second current.

An electronic device may include a semiconductor memory, and the semiconductor memory may include a substrate; a variable resistance element formed over the substrate and exhibiting different resistance values representing different digital information, the variable resistance element including a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer; and a blocking layer disposed on at least sidewalls of the variable resistance element, wherein the blocking layer may include a layer that is substantially free of nitrogen, oxygen or a combination thereof.

A magnetoresistive effect oscillator executes a first step of applying a current, which has a first current density larger than a critical current density J.sub.O for oscillation, to a magnetoresistive effect element for a time T.sub.P, and then executes a second step of applying a current, which has a second current density J.sub.S smaller than the first current density and not smaller than the critical current density J.sub.O for oscillation, to the magnetoresistive effect element. The following formulae (1), (2) and (3), or the following formulae (1) and (4) are satisfied on an assumption that an average value of the first current density during the time T.sub.P in the first step is J.sub.P, a critical current density for magnetization reversal of the magnetoresistive effect element is J.sub.R, and a magnetization reversal time of the magnetoresistive effect element is T.sub.R: $\begin{array}{cc}\frac{0.1\times T_R\left(J_R-J_O\right)}{J_p-J_S}<T_p<0.9\times T_R\frac{J_R-J_O}{J_S-J_O}& \end{array}$

An apparatus is provided which comprises: a first stack comprising a magnetic insulating material (MI such as, EuS, EuO, YIG, TmIG, or GaMnAs) and a transition metal dichalcogenide (TMD such as MoS.sub.2, MoSe.sub.2, WS.sub.2, WSe.sub.2, PtS.sub.2, PtSe.sub.2, WTe.sub.2, MoTe.sub.2, or graphene; a second stack comprising an MI material and a TMD, wherein the first and second stacks are separated by an insulating material (e.g., oxide); a magnet (e.g., a ferromagnet or a paramagnet) adjacent to the TMDs of the first and second stacks, and also adjacent to the insulating material; and a magnetoelectric material (e.g., (LaBi)FeO.sub.3, LuFeO.sub.3, PMN-PT, PZT, AlN, or (SmBi)FeO.sub.3) adjacent to the magnet.

A topological spin memory effect, defined as the recovery of magnetic skyrmions or magnetic bubble skyrmions in magnetic thin films after a transition to a dramatically different spin texture, is used for encrypted non-volatile information storage. The storage strategy is based on magnetic skyrmions, that is, topologically protected spin textures comprising chiral domain walls surrounding small (e.g., nanometers to microns in diameter), typically circular, single-domain cores. Systems and methods are described for encrypted non-volatile information storage based on a spin memory effect in magnetic thin films that support skyrmions. Systems and methods encrypt and recover information stored in the form of magnetic skyrmions.

A spin-orbit-torque type magnetization rotating element includes: a spin-orbit torque wiring extending in a first direction; and a first ferromagnetic layer laminated on the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a metal oxide whose electrical conductivity properties exhibit a metallic behavior with respect to temperature, and an oxygen concentration in a region on the first ferromagnetic layer side and an oxygen concentration in a region opposite to the first ferromagnetic layer are asymmetrical with respect to a center of the spin-orbit torque wiring in a thickness direction thereof.

This spin-orbit torque magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer; and a spin-orbit torque wiring on which the first ferromagnetic layer is laminated, wherein the spin-orbit torque wiring extends in a second direction crossing a first direction which is an orthogonal direction of the first ferromagnetic layer, the first ferromagnetic layer includes a first laminate structure and an interfacial magnetic layer in order from the spin-orbit torque wiring side, the first laminate structure is a structure obtained by arranging a ferromagnetic conductor layer and an oxide-containing layer in order from the spin-orbit torque wiring side, the ferromagnetic conductor layer includes a ferromagnetic metal element, and the oxide-containing layer includes an oxide of a ferromagnetic metal element.

Embodiments of the present invention include multiple independent terminals for a plurality of devices in a stack configuration within a semiconductor. In one embodiment, a multi terminal fabrication process comprises: performing an initial pillar layer formation process to create layers of a multi terminal stack; forming a first device in the layers of the multi terminal stack; forming a second device in the layers of the multi terminal stack; and constructing a set of terminals comprising: a first terminal coupled to the first device, a second terminal coupled to the second device; and a third terminal coupled to the first device; wherein at least two terminals in the set of terminals are independent. The third terminal can be coupled to the second device.

A domain wall moving type magnetic recording element includes: a domain wall moving layer in which first layers containing a rare earth metal and second layers containing a transition metal are alternately stacked in a first direction; and a first electrode and a second electrode which face the domain wall moving layer and are arranged to be away from each other. The domain wall moving layer has SOT suppression parts which are positioned in one of interfaces between the first layers and the second layers and contain a non-magnetic metal. The SOT suppression parts are locally distributed at the interface.