A semiconductor device has a semiconductor substrate, a first insulating layer, a first inductor, a second insulating layer, a second inductor, a pad and an annular wiring. The first insulating layer is formed on the semiconductor substrate. The first inductor is directly formed on the first insulating layer. The second insulating layer is formed on the first insulating layer such that the second insulating layer covers the first inductor. The second inductor is directly formed on the second insulating layer such that the second inductor faces the first inductor. The pad is directly formed on the second insulating layer. The pad is electrically connected with the second inductor. The annular wiring is electrically connected with the pad. The annular wiring is spaced apart from the second inductor. The annular wiring surrounds the second inductor without forming a vertex in plan view.

A digital isolator according to an embodiment includes a first electrode, a first insulating part, a second electrode, a second insulating part, and a first dielectric part. The first insulating part is located under the first electrode. The second electrode is located under the first insulating part. The second insulating part is located around the first electrode along a first plane perpendicular to a first direction. The first direction is from the second electrode toward the first electrode. The first dielectric part is located between the first electrode and the second insulating part in a second direction along the first plane. The first dielectric part contacts the first electrode. A relative dielectric constant of the first dielectric part is greater than a relative dielectric constant of the first insulating part.

A high-voltage isolation withstand planar transformer and its high-voltage insulation method are provided. An insulating medium is provided between low-voltage windings and high-voltage windings. High-frequency current flows through the windings and generates a high-frequency alternating magnetic field to achieve isolated energy transmission. The low-voltage windings are connected to low-voltage side connection terminals, and the high-voltage windings are connected to high-voltage side connection terminals through a high-voltage winding leading-out foil. An annular hollow part of the low-voltage windings and the high-voltage windings is provided with a magnetic core. A stress grading method is provided to control the distribution of the electric field around the high-voltage winding leading-out foil. A voltage-balancing element group provides a voltage potential with a gradient change between the high-voltage winding leading-out foil and the low-voltage windings. The new transformer has small size, high power density and low cost.

The present disclosure provides a circuit comprising: a 4-20 mA transmitter; a transformer having a primary winding and a secondary winding; a first current-sense resistor connected in series with the primary winding and a current regulator, wherein the current-sense resistor is configured to measure a first voltage and provide the measured first voltage to the current regulator, the current regulator being configured to output a current proportional to the measured first voltage; and a second current-sense resistor connected in series with the secondary winding, wherein the current-sense resistor is configured to measure a second voltage such that a current associated with the 4-20 mA transmitter is determined based on the second voltage.

An electronic device includes a magnetic assembly with a multilevel lamination or metallization structure having a core layer, dielectric layers and conductive features formed in metal layers on or between the dielectric layers in respective planes of orthogonal first and second directions and stacked along an orthogonal third direction. The conductive features include first and second patterned conductive features forming first and second windings, first and second conductive capacitor plates, and first and second conductive field plates, in which the first conductive capacitor plate is between the first conductive field plate and the core layer along the third direction and the second conductive capacitor plate is between the second conductive field plate and the core layer along the third direction.

The invention describes a split transformer assembly (1) comprising a first partial assembly (10) comprising a primary winding arrangement (10W) shaped to accommodate a first core half (10C); a second partial assembly (20) comprising a secondary winding arrangement (20W) shaped to accommodate a second core half (20C); and wherein the first partial assembly (10) is realized for mounting on one side of a circuit board (3) and the second partial assembly (20) is realized for mounting on the opposite side of the circuit board (3) such that the core halves (10C, 20C) of the partial assemblies (10, 20) are completely isolated by the material of the circuit board (3). The invention further describes a switching converter circuit arrangement (2), and a method of assembling a split transformer (1).

An isolator includes first and second coils, a first insulating film and a primary side conductor. The first coil at a primary side and the second coil at a secondary side are magnetically coupled via the first insulating film. The second coil and the primary side conductor are provided at a front surface side of the first insulating film. The first insulating film includes a plurality of island-shaped convex portions at the front surface side. The island-shaped convex portions are provided between the second coil and the primary side conductor. The island-shaped convex portions provide a creepage distance from the second coil to the primary side conductor along the front surface of the first insulating film. The creepage distance is longer in any direction along the front surface of the first insulating film than a direct distance from the second coil to the primary side conductor.

An Isolating Transmission Line Transformer (ITLT) for use in a data communications system is provided, the transformer comprising: a substantially planar substrate formed of electrically insulative material having opposed first and second surfaces; a first port formed of two separate terminals provided at one part of the substrate; a second port formed of two separate terminals provided at a second part of the substrate; a first conductor connected in series to the first port and arranged as a single loop; a second conductor which is electrically isolated from the first conductor and connected in series to the second port, the second conductor being arranged as a single loop in a substantially opposite orientation to the first conductor; wherein the first and second ports and at least part of the first and second conductors are provided on the substrate surface (s); and a core arranged between the first and second ports to cover the majority of the first and second conductors.

A high-voltage isolation withstand planar transformer and its high-voltage insulation method are provided. An insulating medium is provided between low-voltage windings and high-voltage windings. High-frequency current flows through the windings and generates a high-frequency alternating magnetic field to achieve isolated energy transmission. The low-voltage windings are connected to low-voltage side connection terminals, and the high-voltage windings are connected to high-voltage side connection terminals through a high-voltage winding leading-out foil. An annular hollow part of the low-voltage windings and the high-voltage windings is provided with a magnetic core. A stress grading method is provided to control the distribution of the electric field around the high-voltage winding leading-out foil. A voltage-balancing element group provides a voltage potential with a gradient change between the high-voltage winding leading-out foil and the low-voltage windings. The new transformer has small size, high power density and low cost.

A multi-voltage domain device includes a semiconductor layer including a first voltage domain, a second voltage domain, and an isolation region that electrically isolates the first voltage domain and the second voltage domain in a lateral direction. The isolation region includes at least one deep trench isolation barrier. A layer stack is arranged on the semiconductor layer and includes a stack insulator layer, a first coil arranged in the stack insulator layer, and a second coil arranged in the stack insulator layer and laterally separated from the first coil in the lateral direction. The first and second coils are magnetically coupled to each other in the lateral direction. The first coil includes terminals arranged vertically over the first region and are electrically coupled to the first voltage domain, and the second coil includes terminals arranged vertically over the second region and are electrically coupled to the second voltage domain.