An on-chip magnetic structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

An on-chip magnetic structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

A system for fabricating anisotropic magnetic nanowire composites includes a chamber for containing an ionic fluid. A hole in a wall of the chamber allows for the ionic fluid to be in contact with a porous template outside of the chamber, and a cathode and an anode provide an electric field across the ionic fluid and porous template. The electric field causes ionic materials in the ionic fluid to migrate into the pores of the porous template, therefore plating nanowires in the porous template. Constant distances and positions of the anode, cathode, a reference probe, and a stirring element allow for the fabrication of longer, more uniform nanowires, and for the generation of consistent magnetic nanowire composites across multiple fabrication sessions.

A method for preparing a power inductor includes the following steps A to E: A: preparing a composite wire; B: winding the composite wire according to a predetermined shape and a predetermined coil quantity, so as to form coils; C: placing the coils into a mold cavity, adding metal soft magnetic powder to the mold cavity, and pressing the metal soft magnetic powder and the coils to form a base comprising the coils; D: performing sintering treatment on the base; and E: plating two terminal electrodes on two ends of the base to form the power inductor.

An integrally-molded inductor comprises a coil having an insulation coating layer and a magnetic material integrally molded with the coil by compression molding, with electrodes, which are exposed outside the magnetic material, formed at two ends of the coil, wherein the insulation coating layer of the coil comprises a non-conductive inorganic particle component and a resin component which are uniformly mixed, the inorganic particle component and the resin component being in a ratio by weight percentage of 70%:30% to 90%:10%. According to the integrally-molded inductor and a method for manufacturing same, the pressure resistance of the integrally-molded inductor is improved, and the electrical properties and reliability of the inductor product are improved.

An integrally-molded inductor comprises a coil having an insulation coating layer and a magnetic material integrally molded with the coil by compression molding, with electrodes, which are exposed outside the magnetic material, formed at two ends of the coil, wherein the insulation coating layer of the coil comprises a non-conductive inorganic particle component and a resin component which are uniformly mixed, the inorganic particle component and the resin component being in a ratio by weight percentage of 70%:30% to 90%:10%. According to the integrally-molded inductor and a method for manufacturing same, the pressure resistance of the integrally-molded inductor is improved, and the electrical properties and reliability of the inductor product are improved.

Articles and methods for forming a layer of an iron oxide compound on a metal wire are generally described. The wire may be useful for wireless battery recharging devices.

An object of the present invention is to provide a novel method for forming an electrolytic copper plating film having excellent adhesion on the surface of a rare earth metal-based permanent magnet. The method of the present invention as a means for achieving the object is characterized in that after a magnet is immersed in a plating solution, a cathode current density of 0.05 A/dm.sup.2 to 4.0 A/dm.sup.2 for performing an electrolytic copper plating treatment is applied thereto over 10 seconds to 180 seconds to start the treatment.

A technique relates to a method of forming a laminated multilayer magnetic structure. An adhesion layer is deposited on a substrate. A magnetic seed layer is deposited on top of the adhesion layer. Magnetic layers and non-magnetic spacer layers are alternatingly deposited such that an even number of the magnetic layers is deposited while an odd number of the non-magnetic spacer layers is deposited. The odd number is one less than the even number. Every two of the magnetic layers is separated by one of the non-magnetic spacer layers. The first of the magnetic layers is deposited on the magnetic seed layer, and the magnetic layers each have a thickness less than 500 nanometers.

Process for deposition of a dense thin film comprising at least one material Px on a substrate, in which: (a) a colloidal suspension is procured containing nanoparticles of at least one material Px, (b) said substrate is immersed in said colloidal suspension, jointly with a counter electrode, (c) an electrical voltage is applied between said substrate and said counter electrode so as to obtain the electrophoretic deposition of a compact film comprising nanoparticles of said at least one material Px on said substrate, (d) said compact film is dried, (e) said film is mechanically consolidated, (f) thermal consolidation is carried out at a temperature T.sub.R that does not exceed 0.7 times (and preferably does not exceed 0.5 times) the melting or decomposition temperature (expressed in C.) of the material Px that melts at the lowest temperature, preferably at a temperature of between 160 C. and 600 C., and even more preferably at a temperature of between 160 C. and 400 C., knowing that steps (e) and (f) can be carried out simultaneously, or can be inverted.