The invention provides a method of forming a perovskite film for an optoelectronic device, the method comprising: applying a perovskite precursor solution to at least one part of a hydrophilic region of a substrate, wherein the hydrophilic region is bounded by a hydrophobic boundary; allowing the perovskite precursor solution to spread over the hydrophilic region, wherein the perovskite precursor solution is retained within the hydrophilic region by at least a portion of the hydrophobic boundary; and drying the perovskite precursor solution to form a perovskite film on the hydrophilic region.

Systems and methods for performing a rapid hybrid chemical vapor deposition are described herein. In an embodiment, first type of precursor materials is deposited on a substrate. The substrate is placed in a receptacle of a heating device, the heating device configured to provide heat to at least a portion of the receptacle. A second type of precursor materials is placed in the receptacle of the heating device such that the organic compound is closer to a gas source of the heating device than the substrate. A gas flow is created through the receptacle of the heating device. The heating component is used to cause of a portion of the receptacle comprising the substrate and the second type of precursor materials. During the heating process, at least a portion of the second type of precursor materials is deposited on at least a portion of the first type of precursor materials on the substrate.

Provided is a perovskite solar cell, and more particularly, a perovskite solar cell including an organometal halide layer having a perovskite structure; and a crystalline material layer stacked while forming an interface with the organometal halide layer, wherein a crystalline material of the crystalline material layer is a crystalline halide having a crystal structure different from the perovskite structure, and the crystalline halide has a band gap energy higher than a band gap energy of an organometal halide of the organometal halide layer, and has a valence band maximum energy level lower than a valence band maximum energy level of the organometal halide.

Provided are a perovskite optoelectronic device containing an exciton buffer layer, and a method for manufacturing the same. The optoelectronic device of the present invention comprises: an exciton buffer layer in which a first electrode, a conductive layer disposed on the first electrode and comprising a conductive material, and a surface buffer layer containing fluorine-based material having lower surface energy than the conductive material are sequentially deposited; a photoactive layer disposed on the exciton buffer layer and containing a perovskite photoactive layer; and a second electrode disposed on the photoactive layer. Accordingly, a perovskite is formed with a combined FCC and BSS crystal structure in a nanoparticle photoactive layer. The present invention can also form a lamellar or layered structure in which an organic plane and an inorganic plane are alternatively deposited; and an exciton can be bound by the inorganic plane, thereby being capable of expressing high color purity.

The present disclosure provides a printable curved-surface perovskite solar cell, including a curved-surface conductive substrate, a porous electron transport layer, a porous insulation layer, a porous back electrode layer and a perovskite filler. The curved-surface conductive substrate includes a curved-surface transparent substrate and a conductive layer deposited on the curved-surface transparent substrate. The porous electron transport layer, the porous insulation layer and the porous back electrode layer are sequentially deposited on the conductive layer from bottom to top. The perovskite filler is filled in pores of the porous electron transport layer, the porous insulation layer and the porous back electrode layer. The present disclosure further provides a method for preparing the printable curved-surface perovskite solar cell.

We disclose herein a hetero-structure comprising: a curved material; at least one layer of a first material rolled around the curved material; at least one intermediate layer rolled on the at least one layer of the first material; and at least one layer of a second material rolled around the at least one intermediate layer.

The disclosure provides an efficient and stable inorganic lead-free perovskite solar cell and a method for preparing the same. The solar cell includes a conductive substrate, a PEDOT: PSS layer, an inorganic lead-free CsSnI.sub.3 perovskite layer, a C60 layer, a BCP layer, and a metal counter electrode layer arranged in order from bottom to top, wherein the inorganic lead-free CsSnI.sub.3 perovskite layer is a CsSnI.sub.3 perovskite layer passivated by a thioureas small-molecule organic compound.

A continuous inline method for production of photovoltaic devices at high speed includes: providing a substrate; depositing a first carrier transport solution layer with a first carrier transport deposition device to form a first carrier transport layer on the substrate; depositing a Perovskite solution comprising solvent and perovskite precursor materials with a Perovskite solution deposition device on the first carrier transport layer; drying the deposited Perovskite solution to form a Perovskite absorber layer; and depositing a second carrier transport solution with a second carrier transport deposition device to form a second carrier transport layer on the Perovskite absorber layer, wherein the deposited Perovskite solution is dried at least partially with a fast drying device which causes a conversion reaction and the Perovskite solution to change in optical density by at least a factor of 2 in less than 0.5 seconds after the fast drying device first acts on the Perovskite solution.

The invention relates to an optoelectronic material comprising a compound, wherein the compound comprises: (i) one or more cations, A; (ii) one or more first B cations, B.sup.n+; (iii) one or more second B cations, B.sup.m+; and (iv) one or more chalcogen anions, X; wherein the one or more first B cations, B.sup.n+ are different from the one or more second B cations, B.sup.m+; n represents the oxidation state of the first B cation and is a positive integer of from 1 to 7 inclusive; m represents the oxidation state of the second B cation and is a positive integer of from 1 to 7 inclusive; and n+m is equal to 8.

Semiconductor devices, and methods of forming the same, include a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer, wherein the active layer includes a perovskite layer. A passivation layer is disposed directly on a surface of the active layer between the cathode layer and the active layer, the passivation layer including a layer of material that passivates both cationic and anionic defects in the surface of the active layer.