The present disclosure relates to a device that includes a switchable photovoltaic (PV) device that includes a first active material and a static PV device that includes a second active material, where the switchable PV device and the static PV device are positioned substantially parallel to one another, the switchable PV device has a first state that is substantially transparent to a first wavelength of light in the visible spectrum, the switchable PV device has a second state this is substantially opaque to a second wavelength of light in the visible spectrum, the switchable PV device can be reversibly switched between the first state and the second state, the static PV device is substantially transparent to the visible spectrum of light, and both the switchable PV device and static PV device are capable of generating power.

A solar cell having a transparent conducting layer disposed upon a substrate, an electron transporting layer (ETL) disposed upon the transparent conducting layer, a perovskite layer disposed upon the ETL layer, an inorganic dichalcogenide material disposed upon the perovskite layer, and a conducting material disposed upon the dichalcogenide material, the dichalcogenide material and the conducting material together comprising a dichalcogenide composite electrode. In another embodiment, the solar cell has a first conducting material disposed upon a substrate, an inorganic dichalcogenide material disposed upon the first conducting material forming a dichalcogenide composite electrode, a perovskite layer disposed upon the dichalcogenide composite electrode, an ETL disposed upon the perovskite layer, and a second conducting material disposed upon the ETL.

Organic-inorganic perovskite nanoparticle compositions are described herein. In some embodiments, a nanoparticle composition comprises a layer of organic-inorganic perovskite nanocrystals, the organic-inorganic perovskite nanocrystals comprising surfaces associated with ligands of size unable to incorporate into octahedral corner sites of the perovskite crystal structure.

Thin-film solar cell modules and serial cell-to-cell interconnect structures and methods of fabrication are described. In an embodiment, solar cell module and interconnect includes a conformal transport layer over a subcell layer. The conformal transport layer may also laterally surround an outside perimeter the subcell layer.

A solar cell includes a first electrode, a second electrode, a photoelectric conversion layer interposed between the first and second electrodes, and a hole transport layer interposed between the first electrode and the photoelectric conversion layer. At least one electrode selected from the group consisting of the first and second electrodes is transparent to light. The photoelectric conversion layer includes a perovskite compound constituted by a monovalent cation, a divalent cation, and a halogen anion. The monovalent cation includes at least one selected from the group consisting of a formamidinium cation and a methylammonium cation. The divalent cation includes a Sn cation. The halogen anion includes an iodide ion. The hole transport layer includes 4,4′,4″-tris[9,9-dimethyl-2-fluorenyl(4-methoxy-phenyl)amino]triphenylamine.

The present disclosure relates to novel perovskite solar cells, and the method of making and using the novel perovskite solar cells. More specifically, a triple cation perovskite solar cell device containing a multifunctional capping layer (MCL) of R.sup.1NH.sub.3.sup.+ and/or a thin layer of two-dimensional (2D) material of (R.sup.1NH.sub.3.sup.+).sub.2(A.sup.+).sub.n−1(M.sup.2+).sub.n(X.sup.−).sub.3n+1 on top of the commonly used ABX3 perovskite, with enhanced power conversion efficiency of 22.06% (from 19.94%) with long-term stability over 1000 hours under continuous illumination has been developed.

A method for preparing photoactive perovskite materials. The method comprises the steps of: introducing a lead halide and a first solvent to a first vessel and contacting the lead halide with the first solvent to dissolve the lead halide to form a lead halide solution, introducing a Group 1 metal halide a second solvent into a second vessel and contacting the Group 1 metal halide with the second solvent to dissolve the Group 1 metal halide to form a Group 1 metal halide solution, and contacting the lead halide solution with the Group 1 metal halide solution to form a thin-film precursor ink. The method further comprises depositing the thin-film precursor ink onto a substrate, drying the thin-film precursor ink to form a thin film, annealing the thin film; and rinsing the thin film with a salt solution.

Provided are a perovskite light emitting device containing an exciton buffer layer, and a method for manufacturing the same. A light emitting device of the present invention comprises: an exciton buffer layer in which a first electrode, a conductive layer disposed on the first electrode and comprising a conductive material, and a surface buffer layer containing fluorine-based material having lower surface energy than the conductive material are sequentially deposited; a light-emitting layer disposed on the exciton buffer layer and containing a perovskite light-emitter; and a second electrode disposed on the light-emitting layer. Accordingly, a perovskite is formed with a combined FCC and BSS crystal structure in a nanoparticle light-emitter. The present invention can also form a lamellar or layered structure in which an organic plane and an inorganic plane are alternatively deposited; and an exciton can be bound by the inorganic plane, thereby being capable of expressing high color purity.

The invention relates to an optoelectronic device comprising: (a) a layer comprising a crystalline A/M/X material, wherein the crystalline A/M/X material comprises a compound of formula: [A]a [M]b [X]c wherein: [A] comprises one or more A cations; [M] comprises one or more M cations which are metal or metalloid cations; [X] comprises one or more X anions; a is a number from 1 to 6; b is a number from 1 to 6; and c is a number from 1 to 18; and (b) an ionic liquid which is a salt comprising an organic cation and a counter anion, wherein the organic cation is present within the layer comprising the crystalline A/M/X material. The invention also relates to processes for producing an ionic liquid-modified film of a crystalline A/M/X material and a process for producing an optoelectronic device comprising an ionic-liquid modified film of a crystalline A/M/X material.

There is a method for forming a semiconductor nanostructure on a substrate. The method includes placing a substrate and a semiconductor material in a pulsed laser deposition chamber; selecting parameters including a fluence of a laser beam, a pressure P inside the chamber, a temperature T of the substrate, a distance d between the semiconductor material and the substrate, and a gas molecule diameter a.sub.0 of a gas to be placed inside the chamber so that conditions for a Stranski-Krastanov nucleation are created; and applying the laser beam with the selected fluence to the semiconductor material to form a plume of the semiconductor material. The selected parameters determine the formation, from the plume, of (1) a nanolayer that covers the substrate, (2) a polycrystalline wetting layer over the nanolayer, and (3) a single-crystal nanofeature over the polycrystalline wetting layer, and the single-crystal nanofeature is grown free of any catalyst or seeding layer.