The invention pertains to a process for the manufacture of a fluoropolymer film, to the fluoropolymer film obtainable therefrom and to use of said fluoropolymer film in electrochemical and photo-electrochemical devices.

Stable perovskite films having substantially-no phase transition within a predetermined temperature range are disclosed. In the films, formation of carrier traps is suppressed. Thermally stable perovskite solar cells and light-emitting devices using the films are also disclosed.

Described herein is a printed photovoltaic cell comprising an anode; an LEP printed cathode; and an LEP printed photovoltaic layer disposed between the anode and the cathode. The photovoltaic layer comprises a material with a perovskite structure having a chemical formula selected from ABX.sub.3 and A.sub.2BX.sub.6 and a thermoplastic resin comprising a copolymer of an alkylene monomer and a monomer having acidic side groups; and/or a copolymer of an alkylene monomer and an ethylenically unsaturated monomer comprising an epoxide; and/or a copolymer of an alkylene monomer, an ethylenically unsaturated monomer comprising an epoxide, and a monomer selected from a monomer having acidic side groups, a monomer having ester side groups and a mixture thereof. The printed cathode comprises: a thermoplastic resin; and electrically conductive metal particles. Also described herein is a method of producing the printed photovoltaic cell and an ink set for use in the method.

A photovoltaic device (10) is provided that comprises serially arranged photovoltaic device cells (10A, 10B). Each cell having a transparent electrode layer region electrical conductors (121A, . . . , 124A) forming an electric contact with the transparent electrode layer region, a photo-voltaic stack portion (14A, 14B) that extends over the transparent electrode region (11A, 11B) and over an insulated portion of the electrical conductors, a further electrode region (15A, 5B) that extends over the photovoltaic stack portion (14A,14B). A further electrode region (15A) of a photovoltaic device cell (10A) extends over electric contacts formed by exposed ends (12B1) of the electrical conductors of a subsequent photovoltaic device cell (10B).

Example embodiments generally relate to a detector for electromagnetic radiation such as a detector comprising a first, pixelated electrode layer comprising a plurality of electrode pixels, a first layer comprising a plurality of tiles comprising a material configured to absorb and convert the electromagnetic radiation, and a second electrode layer, as well as a method of producing a detector for electromagnetic radiation, comprising providing a first, pixelated electrode layer comprising a plurality of electrode pixels, applying a plurality of tiles comprising a material configured to absorb and convert the electromagnetic radiation on the first, pixelated electrode layer, and applying a second electrode layer on the first layer.

A photoelectric conversion device includes: a substrate; a first photoelectric conversion element including a first substrate electrode, a first active layer and a first counter electrode; a second photoelectric conversion element including a second substrate electrode, a second active layer, and a second counter electrode; and a connection connecting the first counter electrode and the second substrate electrode. The second active layer is represented by a composition formula: A.sub.αBX.sub.χ, where A denotes at least one cation selected from monovalent cations, B denotes at least one cation selected from bivalent cations, and X denotes at least one ion selected from monovalent halogen ions; and the second active layer has a first and a second compound layer, the first compound layer containing a first compound satisfying 0.95≤α, and 2.95≤χ, and the second compound layer containing a second compound satisfying α<0.95, and χ<2.95.

A photoelectric conversion device includes a first electrode, a photoelectric conversion layer, and a second electrode in sequence. The photoelectric conversion device includes a sealing member on a non-facing surface side of one electrode selected from the first electrode and the second electrode, the non-facing surface side not facing the photoelectric conversion layer. The sealing member includes an insulating layer, a metal layer, and a base in sequence from the one electrode. In an end of the sealing member in a surface direction, a length of the insulating layer in the surface direction is equal to or longer than a length of the metal layer in the surface direction, and the length of the metal layer in the surface direction is longer than a length of the base in the surface direction by 0.1 μm or more.

An arrangement includes a solar cell and a covering, wherein the covering covers the solar cell, at least on the side that is intended to be exposed to electromagnetic radiation of the sun. The covering has an electrochromic layer. The arrangement also has a control unit for controlling the electrochromic layer. The control unit is designed to control the transmittance of the electrochromic layer for electromagnetic radiation in a defined wavelength range by applying an electrical voltage to the electrochromic layer.

Solar cell interconnect with bypass diodes are described. In an embodiment, a semiconductor-based bypass layer is formed over a top electrode layer of a solar cell and spans over a vertical interconnect providing vertical interconnection between the bottom electrode layer and top electrode layer of serial solar cells. A bypass electrode layer is formed over the semiconductor-based bypass layer and in contact with the top electrode layer for one of the solar cells.

Provided is a method for preparing lead iodide, which controls the crystal form of lead iodide through temperature, including: dissolving a lead compound in a first acid solution and adding an iodine compound to form a reaction solution including the first lead iodide; and heating the reaction solution to a temperature of 60° C. or more and standing at a constant temperature, to obtain the second lead iodide, wherein a peak intensity of the (003) crystal plane of the second lead iodide is greater than or equal to a peak intensity of the (110) crystal plane. Provided is also a method for preparing the perovskite film.