The teachings herein pertain to hole transporting compounds containing a cyclobutyl moiety, which can be made into organic hole conductors and into hole transporting material. Additionally, optoelectronic and photoelectrochemical devices comprising such hole transporting material or hole transporting compound are described, in particular photovoltaic devices, organic-inorganic perovskite films, layered photovoltaic devices, p-n heterojunctions, dye-sensitized solar cells, organic solar cells and solid-state solar cells. Notably, a fabricated perovskite solar cell module using a disclosed HTM compound exhibited a record efficiency over 19.0% with an active area of 30.24 cm.sup.2.

Provided are a photoelectric conversion element including a first electrode having a photosensitive layer including a light absorber on a conductive support and a second electrode facing the first electrode, in which the light absorber includes a compound having a perovskite-type crystal structure, and a compound represented by a specific formula is provided on a surface of the first electrode, a solar cell using the same, and a method for manufacturing a photoelectric conversion element including bringing a first electrode having a photosensitive layer in which a compound having a specific perovskite-type crystal structure is included as a light absorber on a conductive support into contact with a liquid containing a compound represented by specific Formula (AC).

Disclosed are a composition for forming a hole transport layer of a light-transmitting solar cell, a method for manufacturing the light-transmitting solar cell, and a light-transmitting solar cell manufactured thereby. The light-transmitting solar cell manufactured with the composition for forming the hole transport layer may have excellent durability and therefore, not only deposit a transparent electrode, which is an upper electrode, without damage even without buffer layer, thereby reducing the process cost but also deposit the transparent electrode without damage by using a general sputter equipment even without using an expensive special sputter equipment.

Methods' and compositions for making coated substrates using a co-solvent method are disclosed. Embodiments of the present disclosure relate in general to methods and compositions for making thin films of organometallic halides. According to one aspect, organometallic halides are deposited from solution on the surface of a substrate at temperatures between about 10 C and 50 C. According to one aspect, organometallic halides are deposited from solution on the surface of a substrate at room temperature.

Provided are a photoelectric conversion device giving high photoelectric conversion efficiency and a production method thereof. A photoelectric conversion device having an anode, a cathode, an active layer containing a perovskite compound disposed between the anode and the cathode, and a hole injection layer disposed between the anode and the active layer, wherein hole injection layer is a layer having a residual film rate of 80% or more in measurement of the residual film rate after a water rinse treatment, and the material of the hole injection layer is at least one material selected from the group consisting of polythiophene and derivatives thereof, aromatic amine compounds, and polymer compounds having an aromatic amine residue containing a phenyl group having at least three substituents as a repeating unit.

A method for forming an intermediate structure in the formation of an optoelectronic device in provided. The method includes: a) obtaining a stack of layers over a substrate holder in a sputtering chamber, the stack of layers comprising an active layer comprising an active material having a perovskite crystal structure, an n-type semiconducting layer comprising a fullerene over the active layer, and an energy alignment layer comprising a lithium halide, a magnesium halide Al.sub.2O.sub.3 or a metal fluoride on, and in contact with, the n-type semiconducting layer, wherein the energy alignment layer comprises an exposed top surface, and b) sputtering an n-type semiconducting metal oxide layer on the exposed top surface of the energy alignment layer, wherein said sputtering is performed at a sputtering power density of at most 1 W.Math.cm.sup.-2 and at a temperature of the stack of layers of at most 100° C.

There is provided a photovoltaic device that comprises a front electrode, a back electrode, and disposed between the front electrode and the back electrode, an electron transporter region comprising an electron transporter layer; a hole transporter region comprising a hole transporter layer, and a layer of perovskite semiconductor disposed between and in contact with the electron transporter layer and the hole transporter layer. The electron transporter region is nearest to the front electrode and the hole transporter region is nearest to the back electrode, and the electron transporter layer comprises any of a chalcogenide material and an organic material and has a thickness of at least 2 nm.

The present disclosure relates to a device that includes a first layer having an active material and a stabilizing material, where the active material includes a semiconductor, the stabilizing material includes at least one of an oligomer, an elastomer, a polymer, and/or a resin, and the stabilizing material provides to the device an improved performance metric compared to a device constructed of the first layer but constructed of only the active material (i.e., in the absence of the stabilizing material).

According to one embodiment, According to one embodiment of the invention, a conductive member includes a first layer including a metal nanowire, a second layer including a polythiophene member, and a third layer including a graphene member including a graphene skeleton. The second layer is provided between the metal nanowire and the third layer.

Provided are a perovskite light emitting device containing an exciton buffer layer, and a method for manufacturing the same. The light emitting device of the present invention comprises: an exciton buffer layer in which a first electrode, a conductive layer disposed on the first electrode and comprising a conductive material, and a surface buffer layer containing fluorine-based material having lower surface energy than the conductive material are sequentially deposited; a light-emitting layer disposed on the exciton buffer layer and containing an organic-inorganic hybrid perovskite light emitting body; and a second electrode disposed on the light-emitting layer. Accordingly, an organic-inorganic hybrid perovskite is formed with a combined FCC and BSS crystal structure in a nanoparticle light-emitting body; the present invention forms a lamellar structure in which an organic plane and an inorganic plane are alternatively deposited; and an exciton is bound by the inorganic plane, thereby being capable of expressing high color purity.