Disclosed is a direct-conversion-type X-ray detector, including a first electrode on a substrate, a semiconductor structure including a photoconductor using a perovskite material on the first electrode, and a second electrode on the semiconductor structure.

Semiconductor devices including a cathode layer, an anode layer, an active layer disposed between the cathode layer and the anode layer, wherein the active layer includes a perovskite layer, and a passivation layer disposed directly on a surface of the active layer between the cathode layer and the active layer, the passivation layer including a zwitterionic amino acid, such as valine or phenylalanine or other amino acid that passivates both cationic and anionic defects in the surface of the active layer.

The present invention relates to a dye-sensitized solar cell unit (1) comprising a working electrode comprising a light-absorbing layer (10), a porous first conducting layer (12) for extracting photo-generated electrons from the light-absorbing layer (10), wherein the light-absorbing layer (10) is arranged on top of the first conducting layer (12), a porous insulating layer (105c) made of an insulating material, wherein the porous first conducting layer (12) is arranged on top of the porous insulating layer (105c). The dye-sensitized solar cell unit (1) further comprises a counter electrode comprising a second conducting layer (16) including conducting material, and a porous third conducting layer (106c) disposed between the porous insulating layer (105c) and the second conducting layer (16), and in electrical contact with the second conducting layer. The dye-sensitized solar cell unit (1) further comprises a liquid electrolyte for transferring charges between the counter electrode and the working electrode. The second conducting layer (16) is non-catalytic and the third conducting layer (106c) comprises catalytic particles (107) for improving the transfer of electrons to the liquid electrolyte.

A process of forming a photoactive layer of a planar perovskite photoactive device comprising: applying at least one layer of a first precursor solution to a substrate to form a first precursor coating on at least one surface of the substrate, the first precursor solution comprising MX.sub.2 and AX dissolved in a first coating solvent, wherein the molar ratio of MX.sub.2:AX=1:n with 0<n<1; and applying a second precursor solution to the first precursor coating to convert the first precursor coating to a perovskite layer AMX.sub.3, the second precursor solution comprising AX dissolved in a second coating solvent, the first precursor solution reacting with the second precursor solution to form a perovskite layer AMX.sub.3 on the substrate, wherein A comprises an ammonium group or other nitrogen containing organic cation, M is selected from Pb, Sn, Ge, Ca, Sr, Cd, Cu, Ni, Mn, Co, Zn, Fe, Mg, Ba, Si, Ti, Bi, or In, X is selected from at least one of F, Cl, Br or I.

Disclosed is a photoelectric conversion element including a cell. The cell includes an electrode substrate, a counter substrate, an oxide semiconductor layer provided on the electrode substrate, an electrolyte provided between the electrode substrate and the counter substrate, and an annular sealing portion joining the electrode substrate and the counter substrate. The layer includes a main body portion provided inside the sealing portion and on the electrode substrate and extending straight from the electrode substrate toward the counter substrate, and a protruding portion which protrudes from the main body portion toward the sealing portion and does not come into contact with the electrode substrate. A width of a second surface of the layer facing the counter substrate is longer than a width of a first surface which is a boundary surface between the layer and the electrode substrate in a cross section along a thickness direction of the layer.

A photovoltaic device comprising a first electrode, a second electrode, an active layer disposed at least partially between the first and second electrodes, an interfacial layer disposed at least partially between the first and second electrodes, and a non-stoichiometric oxide layer disposed at least partially between and in contact with one of the first or second electrodes and an encapsulant layer. The active layer of the photovoltaic device comprises a photoactive material.

The present invention provides a polymer, a method for preparing the same, and a solar cell comprising the polymer having a structure represented by Formula I,

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the polymer has excellent interface-modified property, water resistance and/or excellent electron-transporting property, and thus can be effectively used to prepare solar cells. The polymer not only can significantly improve the hydrophobic property of the thin film surface of the solar cell, thereby protecting the intermediate active layer of the cell from moisture in the air so as to improve the lifetime of the cell device, but also can be used for large-area processing to prepare a flexible cell device.

A photoelectric conversion element includes, at least: a conductive support; a photosensitive layer that contains a light absorbing agent; a hole transport layer that contains a hole transporting material; and a second electrode, in which at least one of the photosensitive layer or the hole transport layer is provided on the conductive support to constitute a first electrode in combination with the conductive support, and in which the hole transport layer contains a compound Q having at least one structure M represented by Formula 1 as the hole transporting material, provided that in a case where the compound Q has two or more of the structures M, the two or more structures M may be the same as or different from each other.

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Described herein is a device that includes an alkyl ammonium metal halide perovskite layer, and a nanostructured semiconductor layer in physical contact with the alkyl ammonium metal halide perovskite layer. The alkyl ammonium metal halide perovskite layer may include methyl ammonium cations. The alkyl ammonium metal halide perovskite layer may include anions of at least one of chlorine, bromine, astatine, and/or iodine. The alkyl ammonium metal halide perovskite layer may include cations of a metal in a 2+ valence state. The metal may include at least one of lead, tin, and/or germanium.

A method for manufacturing a HEMT/HHMT device based on CH.sub.3NH.sub.3PbI.sub.3 material are provided. The method includes: selecting an Al.sub.2O.sub.3 substrate; manufacturing a source electrode and a drain electrode; forming a first electron transport layer on a surface of the source electrode, a surface of the drain electrode, and a surface of the Al.sub.2O.sub.3 substrate not covered by the source electrode and the drain electrode; manufacturing CH.sub.3NH.sub.3PbI.sub.3 material on a surface of the first electron transport layer to form a first light absorbing layer; and forming a gate electrode on a surface of the first light absorbing layer to complete the manufacture of the HEMT device.