The present invention provides a novel method for producing a laminate to be used as a light-transmissive electrode layer and an N-type semiconductor layer of a wet or solid-state dye-sensitized solar cell comprising a light-transmissive electrode layer, an N-type semiconductor layer, a P-type semiconductor layer, and a facing electrode in this order. In said method, a member to be used as the light-transmissive electrode layer is cathode-polarized in a treatment solution containing a Ti component so as to form a titanium oxide layer to be used as the N-type semiconductor layer on said member.

A continuous inline method for production of photovoltaic devices at high speed includes: providing a substrate; depositing a first carrier transport solution layer with a first carrier transport deposition device to form a first carrier transport layer on the substrate; depositing a Perovskite solution comprising solvent and perovskite precursor materials with a Perovskite solution deposition device on the first carrier transport layer; drying the deposited Perovskite solution to form a Perovskite absorber layer; and depositing a second carrier transport solution with a second carrier transport deposition device to form a second carrier transport layer on the Perovskite absorber layer, wherein the deposited Perovskite solution is dried at least partially with a fast drying device which causes a conversion reaction and the Perovskite solution to change in optical density by at least a factor of 2 in less than 0.5 seconds after the fast drying device first acts on the Perovskite solution.

Semiconductor devices, and methods of forming the same, include a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer, wherein the active layer includes a perovskite layer. A passivation layer is disposed directly on a surface of the active layer between the cathode layer and the active layer, the passivation layer including a layer of material that passivates both cationic and anionic defects in the surface of the active layer.

Disclosed herein are perovskite based optoelectronic devices made entirely via solution-processing at low temperatures (<150° C.) which provide for simple manufacturing, compatibility with flexible substrates, and perovskite-based tandem devices. These perovskite based optoelectronic devices are produced using an electron transport layer on which the perovskite layer is formed which is passivated using a ligand selected to reduce electron-hole recombination at the interface between the electron transport layer and the perovskite layer.

Compositions of matter and devices using those compositions are provided, which can, e.g., impede or restrict the migration of halides from a halide perovskite active layer. The composite material may include n layers of semiconductors, wherein n ≥ 2. Each layer of semiconductors may contain (i) one or more organic semiconductor layers and one or more inorganic semiconductor layer in contact with the one or more organic semiconductor layers, (ii) one or more composite semiconductor layers, each composite semiconductor layer containing an organic material and inorganic material, or (iii) a combination thereof.

The present invention relates to a boron-dipyrromethene (BODIPY)-based copolymer, a method for preparing the copolymer, a solar cell including the copolymer, and a method for manufacturing the solar cell. By applying the copolymer of the present invention to a hole transporting layer, a solar cell having improved device characteristics such as charge mobility and power conversion efficiency and allowing those characteristics to be maintained for a long time may be provided.

The present disclosure may provide semiconductor perovskite layers and method of making thereof. In some cases, the perovskite layer may comprise a composition of MA.sub.n1FA.sub.n2Cs.sub.n3PbX.sub.3. MA may be methylammonium, FA may be formamidinium, n1, n2, and n3 may independently be greater than 0 and less than 1, and n1+n2+n3 may equal 1.

A photoelectric device is disclosed. The photoelectric device includes a first electrode, a second electrode, and an electrolyte disposed between the first electrode and the second electrode. The second electrode includes a transparent layer for allowing light to penetrate into the second electrode, an electron transport layer coupled to the transparent layer, and a genetically hybridized fluorescent silk layer as a photo-sensitizer coupled to the electron transport layer.

The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B.sup.I]; (iii) one or more trications [B.sup.III]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B.sup.I] selected from Cu.sup.+, Ag.sup.+ and Au.sup.+; (iii) one or more trications [B.sup.III]; and (iv) one or more halide anions [X].

A method of disinfection of a surface of a subject of harmful microorganisms including pathogenic bacteria and viruses upon visible light irradiation using a hybridized fluorescent silk is provided. The method includes placing a predetermined quantity of the hybridized fluorescent silk i) directly on to a skin surface of a subject; or ii) on a medium and then placing the medium on the skin surface of the subject. The method further includes applying light in the visible spectrum for a predetermined amount of time to the placed quantity of hybridized fluorescent silk, wherein the hybridized fluorescent silk is one of KillerRed, SuperNova, KillerOrange, Dronpa, TurboGFP, mCherry, or any combination thereof.