A use of metallic nano-particles, a dye-sensitized solar cell and a method for fabricating the same are disclosed. The dye-sensitized solar cell includes: an electrode; a semiconductor layer arranged on the electrode and comprising dye molecules; a metallic nano-particle layer arranged on a side of the semiconductor layer away from the electrode; and a counter electrode arranged on a side of the metallic nano-particle layer away from the semiconductor layer.

Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes. The active layer may have perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive. The perovskite material may be disposed between two or more other materials in the photovoltaic device. Inclusion of these materials in various arrangements within an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: additional perovskites, and additional interfacial layers.

In one aspect, nanostructured films are described herein comprising controlled architectures on multiple length scales (e.g. 3). As described further herein, the ability to control film properties on multiple length scales enables tailoring structures of the films to specific applications including, but not limited to, optoelectronic, catalytic and photoelectrochemical cell applications. In some embodiments, a nanostructured film comprises a porous inorganic scaffold comprising particles of an electrically insulating inorganic oxide. An electrically conductive metal oxide coating is adhered to the porous inorganic scaffold, wherein the conductive metal oxide coating binds adjacent particles of the insulating inorganic oxide.

A solar cell module includes a substrate, an element section disposed on the substrate and including a unit cell, a sealer, and a first material. The element section and the first material are housed in a space sealed with the sealer. The unit cell includes a pair of electrodes having conductivity and includes a light-absorbing layer located between the pair of electrodes and converting light into electric charge. The light-absorbing layer includes a perovskite compound represented by a compositional formula AMX.sub.3, where A represents a monovalent cation, M represents a divalent cation, and X represents a monovalent anion. The first material is an amine derivative represented by a compositional formula (Q.sub.1Q.sub.2Q.sub.3-NH)Y, where Q.sub.1, Q.sub.2, and Q.sub.3 each independently represent a functional group including at least one element selected from the group consisting of carbon, hydrogen, nitrogen, and oxygen; and Y represents a halogen.

The present disclosure is directed to a triazine-modified ionic liquid compound, the synthesis thereof and an electrochemical cell electrolyte containing the triazine-modified ionic liquid compound.

The invention provides an optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite. The porous material may comprise a porous perovskite. Thus, the porous material may be a perovskite material which is itself porous. Additionally or alternatively, the porous material may comprise a porous dielectric scaffold material, such as alumina, and a coating disposed on a surface thereof, which coating comprises the semiconductor comprising the perovskite. Thus, in some embodiments the porosity arises from the dielectric scaffold rather than from the perovskite itself. The porous material is usually infiltrated by a charge transporting material such as a hole conductor, a liquid electrolyte, or an electron conductor. The invention further provides the use of the porous material as a semiconductor in an optoelectronic device. Further provided is the use of the porous material as a photosensitizing, semiconducting material in an optoelectronic device. The invention additionally provides the use of a layer comprising the porous material as a photoactive layer in an optoelectronic device. Further provided is a photoactive layer for an optoelectronic device, which photoactive layer comprises the porous material.

The invention provides an optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite. The porous material may comprise a porous perovskite. Thus, the porous material may be a perovskite material which is itself porous. Additionally or alternatively, the porous material may comprise a porous dielectric scaffold material, such as alumina, and a coating disposed on a surface thereof, which coating comprises the semiconductor comprising the perovskite. Thus, in some embodiments the porosity arises from the dielectric scaffold rather than from the perovskite itself. The porous material is usually infiltrated by a charge transporting material such as a hole conductor, a liquid electrolyte, or an electron conductor. The invention further provides the use of the porous material as a semiconductor in an optoelectronic device. Further provided is the use of the porous material as a photosensitizing, semiconducting material in an optoelectronic device. The invention additionally provides the use of a layer comprising the porous material as a photoactive layer in an optoelectronic device. Further provided is a photoactive layer for an optoelectronic device, which photoactive layer comprises the porous material.

A semiconducting nanocomposite and a dye-sensitized solar cell including the same, wherein the semiconducting nanocomposite comprises nanocomposite particles selected from the group consisting of TiO.sub.2/ZnO/CdS, TiO.sub.2/ZnO/CdSe, TiO.sub.2/ZnO/PbS, TiO.sub.2/ZnO/PbSe, TiO.sub.2/ZnS/CdSe, TiO.sub.2/ZnS/PbS, TiO.sub.2/ZnS/PbSe, WO.sub.3/ZnO/CdSe, Nb.sub.2O.sub.5/ZnO/CdSe, and combinations thereof. Various embodiments of each component of the dye-sensitized solar cell, including electrodes, conductive layers, dyes, and electrolytes are also provided.

In one aspect, solar energy systems are described herein. In some embodiments, such a comprises an electrochemical cell comprising a photoelectrode, a counter electrode, and an ion transport membrane disposed between the photoelectrode and counter electrode. The cell further comprises a first electrolyte solution disposed in fluid communication with the photoelectrode and the membrane, and a second electrolyte solution disposed in fluid communication with the membrane and the counter electrode. The first and/or second electrolyte solution comprises a solvated redox pair. Additionally, the cell also comprises a storage electrode, a first external electrical connection between the photoelectrode and the counter electrode, and a second external electrical connection between the counter electrode and the storage electrode. Components of the system define a liquid junction photovoltaic cell under light conditions and a galvanic cell under dark conditions.

In exemplary implementations of this invention, a photoelectrode includes a semiconductor for photocarrier generation, and a catalyst layer for altering the reaction rate in an adjacent electrolyte. The catalyst layer covers part of the semiconductor. The thickness of the catalyst layer is less than 60% of its minority carrier diffusion distance. If the photoelectrode is a photoanode, it has an OEP that is more than the potential of the valance band edge but less than the potential of the Fermi level of the semiconductor. If it is a photocathode, it has an RHE potential that is less than the potential of the conduction band edge but more than the potential of the Fermi level of the semiconductor. The absolute value of difference (OEP minus potential of valence band edge, or RHE potential minus potential of conduction band edge) is greater than zero and less than or equal to 0.2V.