A three-tandem (3T) perovskite/silicon (PVT)-based tandem solar cell (TSC) includes an antireflection coating (ARC), a first transparent conductive oxide layer (TCO), a hole transport layer (HTL), a perovskite (PVT) layer, a second transparent conductive oxide layer (TCO), an electron transport layer (ETL), a plurality of buried contacts, a p-type Si layer, a p-type wafer-based homo-junction silicon solar cell, a n.sup.+ silicon layer, a back contact layer. The solar cell further includes a top sub-cell, a bottom sub-cell and a middle contact-based tandem. The top sub-cell includes the PVT layer. The bottom sub-cell includes the silicon solar cell. The middle contact-based tandem includes the second TCO layer to be used as the middle contact-based tandem, as well as a recombination layer for current collection. Further, a conduction and a valence band edge are employed at a front surface of the ETL.

A three-tandem (3T) perovskite/silicon (PVT)-based tandem solar cell (TSC) includes an antireflection coating (ARC), a first transparent conductive oxide layer (TCO), a hole transport layer (HTL), a perovskite (PVT) layer, a second transparent conductive oxide layer (TCO), an electron transport layer (ETL), a plurality of buried contacts, a p-type Si layer, a p-type wafer-based homo-junction silicon solar cell, a n.sup.+ silicon layer, a back contact layer. The solar cell further includes a top sub-cell, a bottom sub-cell and a middle contact-based tandem. The top sub-cell includes the PVT layer. The bottom sub-cell includes the silicon solar cell. The middle contact-based tandem includes the second TCO layer to be used as the middle contact-based tandem, as well as a recombination layer for current collection. Further, a conduction and a valence band edge are employed at a front surface of the ETL.

The present disclosure provides a photovoltaic device and a method for forming the photovoltaic device. The photovoltaic device comprises a first solar cell structure having a photon absorbing layer comprising an organic material having a first bandgap; and a second solar cell structure having a photon absorbing layer comprising a material that has a Perovskite structure and having a second bandgap. The first and second solar cell structures are positioned at least partially onto each other.

The present invention relates to a multi-layer material comprising an assembly of layers, called front layers, capable of forming a front photovoltaic cell, and an assembly of layers, called rear layers, capable of forming a rear photovoltaic cell, wherein the front layer assembly and the rear layer assembly are electrically insulated by an insulating layer of epitaxial material.

The purpose of the present invention is to improve power generation efficiency of a photovoltaic element. In a tandem-type photovoltaic element that comprises titanium dioxide and silicon dioxide, silicon dioxide particles that constitute a first photovoltaic layer 24 composed of silicon dioxide are thinly dispersed on a charge exchange layer 23 that is composed of Pt and has a roughness on the surface and on a first conductive film 22 that is composed of FTO and also has a roughness on the surface. Due to this configuration, a photovoltaic element with high power generation efficiency can be obtained.

A method for manufacturing a HEMT/HHMT device based on CH.sub.3NH.sub.3PbI.sub.3 material are provided. The method includes: selecting an Al.sub.2O.sub.3 substrate; manufacturing a source electrode and a drain electrode; forming a first electron transport layer on a surface of the source electrode, a surface of the drain electrode, and a surface of the Al.sub.2O.sub.3 substrate not covered by the source electrode and the drain electrode; manufacturing CH.sub.3NH.sub.3PbI.sub.3 material on a surface of the first electron transport layer to form a first light absorbing layer; and forming a gate electrode on a surface of the first light absorbing layer to complete the manufacture of the HEMT device.

A three-tandem (3T) perovskite/silicon (PVT)-based tandem solar cell (TSC) includes an antireflection coating (ARC), a first transparent conductive oxide layer (TCO), a hole transport layer (HTL), a perovskite (PVT) layer, a second transparent conductive oxide layer (TCO), an electron transport layer (ETL), a plurality of buried contacts, a p-type Si layer, a p-type wafer-based homo-junction silicon solar cell, a n.sup.+ silicon layer, a back contact layer. The solar cell further includes a top sub-cell, a bottom sub-cell and a middle contact-based tandem. The top sub-cell includes the PVT layer. The bottom sub-cell includes the silicon solar cell. The middle contact-based tandem includes the second TCO layer to be used as the middle contact-based tandem, as well as a recombination layer for current collection. Further, a conduction and a valence band edge are employed at a front surface of the ETL.

Presented herein is a voltaic cell containing light harvesting antennae or other biologically-based electron generating structures optionally in a microbial population, an electron siphon population having electron conductive properties with individual siphons configured to accept electrons from the light harvesting antennae and transport the electrons to a current collector, an optional light directing system (e.g., a mirror), and a regulator having sensing and regulatory feedback properties for the conversion of photobiochemical energy and biochemical energy to electricity. Also presented herein is a voltaic cell having electricity-generating abilities in the absence of light. Also presented herein is the use of the voltaic cell in a solar panel.

A three-tandem (3T) perovskite/silicon (PVT)-based tandem solar cell (TSC) includes an antireflection coating (ARC), a first transparent conductive oxide layer (TCO), a hole transport layer (HTL), a perovskite (PVT) layer, a second transparent conductive oxide layer (TCO), an electron transport layer (ETL), a plurality of buried contacts, a p-type Si layer, a p-type wafer-based homo-junction silicon solar cell, a n.sup.+ silicon layer, a back contact layer. The solar cell further includes a top sub-cell, a bottom sub-cell and a middle contact-based tandem. The top sub-cell includes the PVT layer. The bottom sub-cell includes the silicon solar cell. The middle contact-based tandem includes the second TCO layer to be used as the middle contact-based tandem, as well as a recombination layer for current collection. Further, a conduction and a valence band edge are employed at a front surface of the ETL.

A three-tandem (3T) perovskite/silicon (PVT)-based tandem solar cell (TSC) includes an antireflection coating (ARC), a first transparent conductive oxide layer (TCO), a hole transport layer (HTL), a perovskite (PVT) layer, a second transparent conductive oxide layer (TCO), an electron transport layer (ETL), a plurality of buried contacts, a p-type Si layer, a p-type wafer-based homo-junction silicon solar cell, a n.sup.+ silicon layer, a back contact layer. The solar cell further includes a top sub-cell, a bottom sub-cell and a middle contact-based tandem. The top sub-cell includes the PVT layer. The bottom sub-cell includes the silicon solar cell. The middle contact-based tandem includes the second TCO layer to be used as the middle contact-based tandem, as well as a recombination layer for current collection. Further, a conduction and a valence band edge are employed at a front surface of the ETL.