A photoelectric conversion element including: a first substrate; a first electrode; a photoelectric conversion layer; a second electrode; and a second substrate, wherein the photoelectric conversion element includes a sealing part sealing at least the photoelectric conversion layer, the sealing part is disposed so as to surround periphery of the photoelectric conversion layer, and a width of the sealing part disposed at each side has a minimum width A and a maximum width B in a width direction, and a ratio (B/A) of the maximum width B to the minimum width A is 1.02 or more but 5.0 or less.

An optoelectronic device has a layered construction, comprising a base layer, a first conductive layer, a photoactive layer and a second conductive layer. Plural separation channels extending through the photoactive layer and the first conductive layer separate the photoactive layer into photoactive regions, and insulator material extends through the respective separation channels to the base layer. Between adjacent photoactive regions, electrical connectors extend inside the lateral extent of the insulator material between a surface of a second electrode that is in electrical contact with one photoactive region to an opposing surface of a first electrode that is in electrical contact with the other photoactive region. By forming the electrical connectors extend inside the lateral extent of the insulator material, the overall size of the connection is minimized.

An element includes a first substrate and a layer including a first conductive layer with a first conductive portion and a second conductive layer. The element includes a cell including the first conductive portion, a second substrate and a sealing portion. A groove is formed between the first and second conductive layers, the element includes an insulating layer provided between the sealing portion and the first substrate, and an outer circumferential edge of the insulating layer is provided to surround the entire sealing portion. The insulating layer covers and hides a portion of the first conductive layer, which protrudes outside the sealing portion, inside from the outer circumferential edge of the insulating layer and outside the sealing portion, enters the groove and covers a part of the second conductive layer, and the rest of the second conductive layer is exposed.

There are provided a photoelectric conversion element and a photoelectric conversion element module including the photoelectric conversion element, the photoelectric conversion element including a transparent substrate, a first and second transparent conductive layer arranged on the transparent substrate, a photoelectric conversion layer arranged on the first transparent conductive layer, a porous insulating layer covering the photoelectric conversion layer, a reflective layer arranged on the porous insulating layer, and a counter conductive layer that are arranged on the reflective layer, in which the photoelectric conversion layer contains a porous semiconductor, a carrier-transport material, and a photosensitizer, and in which an area of the orthogonal projection of the porous insulating layer onto the transparent substrate and an area of the orthogonal projection of the reflective layer onto the transparent substrate are each larger than an area of the orthogonal projection of the photoelectric conversion layer onto the transparent substrate.

A photovoltaic device comprising a first electrode, a second electrode, an active layer disposed at least partially between the first and second electrodes, an interfacial layer disposed at least partially between the first and second electrodes, and a non-stoichiometric oxide layer disposed at least partially between and in contact with one of the first or second electrodes and an encapsulant layer. The active layer of the photovoltaic device comprises a photoactive material.

The dye-sensitized solar cell element includes at least one dye-sensitized solar cell (DSC), a first current extracting portion and a second current extracting portion for extracting current from the at least one DSC. The DSC comprises a first electrode having a transparent substrate and a transparent conductive layer provided on the surface of the substrate, a second electrode facing the first electrode and having a metal substrate, an oxide semiconductor layer provided on the first electrode, and an annular sealing portion bonding the first electrode with the second electrode. The first current extracting portion is included in the conductive film of one DSC of the at least one DSC, the second current extracting portion is connected with the metal substrate of the second electrode of one DSC of the at least one DSC, and the first and second current extracting portions are disposed next to each other.

Solar cell interconnect with bypass diodes are described. In an embodiment, a semiconductor-based bypass layer is formed over a top electrode layer of a solar cell and spans over a vertical interconnect providing vertical interconnection between the bottom electrode layer and top electrode layer of serial solar cells. A bypass electrode layer is formed over the semiconductor-based bypass layer and in contact with the top electrode layer for one of the solar cells.

A photoelectric conversion element includes a first substrate, a second substrate, a first conductive layer, a photoelectric conversion layer, a porous insulating layer, a second conductive layer, a sealing member, and an electrolyte. The photoelectric conversion layer includes a porous semiconductor layer and a photosensitizer added to the porous semiconductor layer. The first conductive layer is divided by a groove into a first region where the photoelectric conversion layer is arranged, and a second region where the photoelectric conversion layer is not arranged. An insulating portion is arranged in and above the groove in a covering relation to a surface of the first region in part thereof where the photoelectric conversion layer is not arranged. The insulating portion has a denser structure than the porous insulating layer. When the photoelectric conversion layer and the insulating portion are projected onto a plane parallel to the first substrate from the side including the second substrate, a projection image of the insulating portion partly overlaps a projection image of the photoelectric conversion layer.

A photoelectric conversion element module 200 includes a plurality of photoelectric conversion elements 100 and 100, each including a first electrode 10 and a second electrode 20 facing each other, and a conductive member 9 electrically connecting the photoelectric conversion elements 100 to each other. Each of the photoelectric conversion elements 100 is arranged in a planar shape so that a direction from each first electrode 10 to each second electrode 20 is the same. The conductive member 9 is connected to a surface of the first electrode 10 which is opposite to the second electrode 20 in at least one photoelectric conversion element 100 and is connected to a surface of the second electrode 20 which is facing the first electrode 10 in at least one different photoelectric conversion element 100, at a position at which the second electrode 20 does not overlap the first electrode 10.

A photoelectric conversion element including: a substrate; a plurality of conductive layers provided on the substrate and arranged with grooves interposed therebetween; and at least one photoelectric conversion cell. The photoelectric conversion cell includes: one conductive layer of the plurality of conductive layers; a counter substrate facing the conductive layer; and an oxide semiconductor layer provided between the conductive layer and the counter substrate. A conductive film is provided on the substrate along a longitudinal direction of the grooves between the plurality of conductive layers, and cracks having a length of 5 m or more exist in the conductive film at a ratio of 15 or more per 100 m in length along the longitudinal direction of the grooves.