A rotary switch device includes a fixed contact point part and a movable contact point part. The movable contact point part is rotated on the fixed contact point part so as to connect and disconnect the fixed contact point part and the movable contact point part. The fixed contact point part and the movable contact point part have contact surfaces which are band shapes and to which corrosion-resistant conductive processing is applied. A transient contact region, in which a contact point is moved from one end portion to the other end portion in a predetermined connection-operation angle from a contact start point with respect to the other of the fixed contact point part and the movable contact point part, is provided on each of the contact surfaces.

A method of treating particles by disaggregating, deagglomerating, exfoliating, cleaning, functionalizing, doping, decorating and/or repairing said particles, in which the particles are subjected to plasma treatment in a treatment chamber containing a plurality of electrodes which project therein and wherein plasma is generated by said electrodes which are moved during the plasma treatment to agitate the particles.

A plasma source consisting of an array of plasma point sources that controls generation of charged particles and radicals spatially and temporally over a user defined region.

A rotary switch device includes a fixed contact point part and a movable contact point part. The movable contact point part is rotated on the fixed contact point part so as to connect and disconnect the fixed contact point part and the movable contact point part. The fixed contact point part and the movable contact point part have contact surfaces which are band shapes and to which corrosion-resistant conductive processing is applied. A transient contact region, in which a contact point is moved from one end portion to the other end portion in a predetermined connection-operation angle from a contact start point with respect to the other of the fixed contact point part and the movable contact point part, is provided on each of the contact surfaces.

An electrical switching device including at least a nominal contact arrangement, the nominal contact arrangement at least a first nominal contact with a plurality of nominal contact fingers forming a finger cage concentric with respect to a longitudinal axis (z), and at least a mating second nominal contact. An arcing contact arrangement including a first arcing contact and a mating second arcing contact. An arcing contact finger including at its free end a first impact area in which a first contacting to the second arcing contact occurs when closing, the electrical switching device. The first impact area is formed by a first planar surface arranged at an inclination angle () larger than zero degrees with respect to the longitudinal axis (z).

An electrical switching device including at least a nominal contact arrangement, the nominal contact arrangement at least a first nominal contact with a plurality of nominal contact fingers forming a finger cage concentric with respect to a longitudinal axis (z), and at least a mating second nominal contact. An arcing contact arrangement including a first arcing contact and a mating second arcing contact. An arcing contact finger including at its free end a first impact area in which a first contacting to the second arcing contact occurs when closing, the electrical switching device. The first impact area is formed by a first planar surface arranged at an inclination angle () larger than zero degrees with respect to the longitudinal axis (z).

A plasma processing method according to an exemplary embodiment includes applying a first direct-current voltage to a lower electrode of a substrate support provided in a chamber of a plasma processing apparatus, in a first period during generation of plasma in the chamber. The plasma processing method further includes applying a second direct-current voltage to the lower electrode in a second period different from the first period during generation of plasma in the chamber. The second direct-current voltage has a level different from a level of the first direct-current voltage. The second direct-current voltage has a same polarity as a polarity of the first direct-current voltage.

A plasma processing method according to an exemplary embodiment includes applying a first direct-current voltage to a lower electrode of a substrate support provided in a chamber of a plasma processing apparatus, in a first period during generation of plasma in the chamber. The plasma processing method further includes applying a second direct-current voltage to the lower electrode in a second period different from the first period during generation of plasma in the chamber. The second direct-current voltage has a level different from a level of the first direct-current voltage. The second direct-current voltage has a same polarity as a polarity of the first direct-current voltage.