The invention provides an overcurrent protection device (1), comprising a current input terminal (2); a central terminal (3) for the output of current overshoots (I.sub.s); and a terminal (4) for the output of non impulse currents (I.sub.c) which is outwardly connected to the voltage of the central terminal (3) before the occurrence of the current overshoot (Is) at the input terminal (2); and an electrical conductor element (5) connected between the current input and output terminals (2 and 4); such conductor element showing a reduced self-induction (L) when operating without current overshoots but, which, in case that current overshoots are present at the input terminal (2), produces a high drop of the induction voltage between such input terminal and the output terminal (2 and 4); wherein the central terminal (3) is arranged in the vicinity of the current input terminal (2) at a distance (D) that may be regulated, so that when, as a result of a current overshoot, the inductive voltage drop between the input terminal and the non-impulse current output terminal (2 and 4) exceeds the dielectric strength of the dielectric material present between the input and central terminals (2 and 3), and thanks to the skin effect, an arc is generated between such input and central terminal (2 and 3), thus preventing the flow of current overshoots (Is) through the conductor element (5).

To spread flux evenly across the entire surface of a rectangular meltable conductor, a protective element includes: an insulating substrate; a heat-generating resistor disposed on the insulating substrate; a first and a second electrodes laminated onto the insulating substrate; a heat-generating element extracting electrode overlapping the heat-generating resistor in a state electrically insulated therefrom and electrically connected to the heat-generating resistor on a current path between the first and the second electrodes; a rectangular meltable conductor laminated between the heat-generating element extracting electrode and the first and the second electrodes for interrupting a current path between the first electrode and the second electrode by being melted by heat; and a plurality of flux bodies disposed on the meltable conductor; wherein the flux bodies are disposed along the heat-generating resistor.

A fuse device for at least one battery cell includes (i) a fuse element for interrupting a current flow from the battery cell in a critical state of the battery cell, (ii) a heating unit, which is connected, in particular electrically and/or thermally and/or mechanically, to the fuse element, and is provided to assist a triggering of the fuse element, (iii) a control unit for activating the heating unit in the critical state, and (iv) at least one carrier element for receiving the fuse element and at least one heating element of the heating unit.

The present disclosure relates to an overvoltage suppression unit provided in a semiconductor circuit breaker using a semiconductor switch for power, the overvoltage suppression unit comprising: an overvoltage suppression element unit disposed on a first surface of a printed circuit board and including at least one overvoltage suppression element; a pattern fuse connected to the overvoltage suppression element unit and patterned on the first surface of the printed circuit board; a first case forming a housing and covering the first surface of the printed circuit board on which the pattern fuse and the overvoltage suppression element unit are disposed; and a lead wire connected to the pattern fuse, wherein the lead wire is formed so as to connect the first surface of the printed circuit board and a second surface of the printed circuit board.

A device structure includes a first gate on a first fin, a second gate on a second fin, where the second gate is spaced apart from the first gate by a distance. A fuse spans the distance and is in contact with the first gate and the second gate. A first dielectric is between the first fin and the second fin, where the first dielectric is in contact with, and below, the fuse and a second dielectric is between the first gate and the second gate, where the second dielectric is on the fuse.

In examples, a package comprises a semiconductor die having a device side and a bond pad on the device side, a conductive terminal exposed to an exterior of the package, and an electrical fuse. The electrical fuse comprises a conductive ball coupled to the bond pad, and a bond wire coupled to the conductive terminal. The bond wire is stitch-bonded to the conductive ball.

A protector is provided on an electric wire that is connected to first and second in-vehicle devices, and protects the first and second in-vehicle devices from a DC overcurrent that flows bi-directionally through the electric wire. The protector includes a thermal fuse, which is provided at a midpoint of the electric wire, and a current restrictor for restricting a current that flows therethrough, in accordance with the direction in which the current flows through the electric wire, the current restrictor being connected in parallel to the thermal fuse.

An overcurrent protection device comprises a current input terminal; a central terminal for output of current overshoots; and a terminal for output of non-impulse currents connected to a voltage of the central terminal. An electrical conductor element is connected between the input and output terminals at a reduced self-induction when operating without current overshoots. When current overshoots are present at the input terminal, the conductor produces a high drop of induction voltage between the input and output terminals. The central terminal is arranged in the vicinity of the input terminal at a distance that may be regulated. When due to current overshoot, the inductive voltage drop between the input and the non-impulse current output terminals exceeds the dielectric strength of the material present between the input and central terminals, an arc is generated between the input and central terminals to prevent the flow of current overshoots through the conductor element.

A semiconductor wafer includes first zones containing integrated circuits, each first zone including a substrate and a sealing ring at a periphery of the substrate. The first zones are separated from each other by second zones defining cutting lines or paths. The integrated circuit includes an electrically conductive fuse that extends between a first location inside the integrated circuit and a second location situated outside the integrated circuit beyond one of the cutting lines. This electrically conductive fuse includes a portion that passes through the sealing ring and another portion that straddles the adjacent cutting line. The portion of the fuse that passes through is electrically isolated from the sealing ring and from the substrate. The straddling portion is configured to be sliced, when cutting the wafer along the cutting line, so as to cause the fuse to change from an electrical on state to an electrical off state.

A fuse arrangement, including: at least a first terminal, a second terminal, and a fuse, wherein the first terminal and the second terminal may be electrically connected via the fuse, and wherein the fuse may be configured to be under fuse internal mechanical stress to deform the fuse along its width direction in case it is broken.