Some embodiments include a fuse element assembly having a first portion configured to rupture as materials of the first portion flow to a second portion through electromigration. The assembly has a second portion configured to accumulate the materials that have flowed from the first portion. The assembly also has a control element configured to divide the flow of materials into at least two paths along the second portion. The first portion may be a fuse-link and the second portion may be a cathode coupled to the fuse-link through a narrow neck region. The control element may be, for example, a slit, a hole, a conductive contact, etc.

Some embodiments include a fuse element assembly having a first portion configured to rupture as materials of the first portion flow to a second portion through electromigration. The assembly has a second portion configured to accumulate the materials that have flowed from the first portion. The assembly also has a control element configured to divide the flow of materials into at least two paths along the second portion. The first portion may be a fuse-link and the second portion may be a cathode coupled to the fuse-link through a narrow neck region. The control element may be, for example, a slit, a hole, a conductive contact, etc.

A fuse may include a housing having a cavity. The fuse may also include a fuse element disposed within the cavity; a plurality of terminals extending out of the housing and electrically connected to the fuse element; and porous material disposed in the cavity adjacent to the fuse element, the porous material having a plurality of pores, the porous material further comprising an open pore structure wherein at least some of the pores are disposed on an outer surface of the porous material facing the fuse element.

A fuse may include a housing having a cavity. The fuse may also include a fuse element disposed within the cavity; a plurality of terminals extending out of the housing and electrically connected to the fuse element; and porous material disposed in the cavity adjacent to the fuse element, the porous material having a plurality of pores, the porous material further comprising an open pore structure wherein at least some of the pores are disposed on an outer surface of the porous material facing the fuse element.

Some embodiments include a fuse element assembly having a first portion configured to rupture as materials of the first portion flow to a second portion through electromigration. The assembly has a second portion configured to accumulate the materials that have flowed from the first portion. The assembly also has a control element configured to divide the flow of materials into at least two paths along the second portion. The first portion may be a fuse-link and the second portion may be a cathode coupled to the fuse-link through a narrow neck region. The control element may be, for example, a slit, a hole, a conductive contact, etc.

Some embodiments include a fuse element assembly having a first portion configured to rupture as materials of the first portion flow to a second portion through electromigration. The assembly has a second portion configured to accumulate the materials that have flowed from the first portion. The assembly also has a control element configured to divide the flow of materials into at least two paths along the second portion. The first portion may be a fuse-link and the second portion may be a cathode coupled to the fuse-link through a narrow neck region. The control element may be, for example, a slit, a hole, a conductive contact, etc.

A semiconductor device can include first and second conductive layers that can be positioned over a substrate, and at least one dielectric layer between the first and second conductive layers. The at least one dielectric layer can be positioned over at least a portion of the second conductive layer, and the first conductive layer can be positioned over a portion of the least one dielectric layer. The semiconductor device can further include a third conductive layer that can be positioned over the substrate and can be conductively connected to the second conductive layer and the substrate. The third conductive layer includes a fusible link.

A semiconductor device can include first and second conductive layers that can be positioned over a substrate, and at least one dielectric layer between the first and second conductive layers. The at least one dielectric layer can be positioned over at least a portion of the second conductive layer, and the first conductive layer can be positioned over a portion of the least one dielectric layer. The semiconductor device can further include a third conductive layer that can be positioned over the substrate and can be conductively connected to the second conductive layer and the substrate. The third conductive layer includes a fusible link.

This description relates generally to semiconductor devices. A semiconductor device can include first and second conductive layers that can be positioned over a substrate, and at least one dielectric layer between the first and second conductive layers. The at least one dielectric layer can be positioned over at least a portion of the second conductive layer, and the first conductive layer can be positioned over a portion of the least one dielectric layer. The semiconductor device can further include a third conductive layer that can be positioned over the substrate and can be conductively connected to the second conductive layer and the substrate. The third conductive layer includes a fusible link.

This description relates generally to semiconductor devices. A semiconductor device can include first and second conductive layers that can be positioned over a substrate, and at least one dielectric layer between the first and second conductive layers. The at least one dielectric layer can be positioned over at least a portion of the second conductive layer, and the first conductive layer can be positioned over a portion of the least one dielectric layer. The semiconductor device can further include a third conductive layer that can be positioned over the substrate and can be conductively connected to the second conductive layer and the substrate. The third conductive layer includes a fusible link.