Methods and systems for thermal ionization of a sample and formation of an ion beam are described. The systems incorporate a thermal ionization filament that is formed of a graphene-based material such as graphite, graphene, graphene oxide, reduced graphene oxide or combinations thereof. The filament material can be doped or chemically modified to control and tune the work function of the filament and improve ionization efficiency of a system incorporating the filament. The systems can be utilized in forming an ion beam for target bombardment or analysis via, e.g., mass spectrometry.

Methods and systems for thermal ionization of a sample and formation of an ion beam are described. The systems incorporate a thermal ionization filament that is formed of a graphene-based material such as graphite, graphene, graphene oxide, reduced graphene oxide or combinations thereof. The filament material can be doped or chemically modified to control and tune the work function of the filament and improve ionization efficiency of a system incorporating the filament. The systems can be utilized in forming an ion beam for target bombardment or analysis via, e.g., mass spectrometry.

Electron beam generator comprising an electron emitting device adapted to emit an electron beam when heated to an elevated temperature, wherein the electron emitting device comprises a filament having a spiral portion.

An ion generation device is provided, which includes: a heater; a counter electrode arranged on one side of the heater; at least one electric member arranged between the heater and the counter electrode, the electric member being made of a pyroelectric element or a piezoelectric element; an electrode arranged between the heater and the electric member to be in contact with the electric member; and a temperature control circuit to control a temperature of the heater. An ion detection device is provided, which includes the above-described ion generation device, an ion filter to sort ions generated at the ion generation device, and a detector to detect the ions sorted in the ion filter.

An ion generation device is provided, which includes: a heater; a counter electrode arranged on one side of the heater; at least one electric member arranged between the heater and the counter electrode, the electric member being made of a pyroelectric element or a piezoelectric element; an electrode arranged between the heater and the electric member to be in contact with the electric member; and a temperature control circuit to control a temperature of the heater. An ion detection device is provided, which includes the above-described ion generation device, an ion filter to sort ions generated at the ion generation device, and a detector to detect the ions sorted in the ion filter.

Electron beam generator comprising an electron emitting device adapted to emit an electron beam when heated to an elevated temperature, wherein the electron emitting device comprises a filament having a spiral portion.

An ion generation device is provided, which includes: a heater; a counter electrode arranged on one side of the heater; at least one electric member arranged between the heater and the counter electrode, the electric member being made of a pyroelectric element or a piezoelectric element; an electrode arranged between the heater and the electric member to be in contact with the electric member; and a temperature control circuit to control a temperature of the heater. An ion detection device is provided, which includes the above-described ion generation device, an ion filter to sort ions generated at the ion generation device, and a detector to detect the ions sorted in the ion filter.

A focused ion beam system includes a gas ion source and an emitter structure. The emitter structure includes a pair of conductive pins fixed to a base member, a filament connected between the pair of conductive pins, and an emitter which has a tip end with one atom or three atoms and which is connected to the filament. A supporting member is fixed to the base material, and the emitter is connected to the supporting member.

A focused ion beam system includes a gas ion source and an emitter structure. The emitter structure includes a pair of conductive pins fixed to a base member, a filament connected between the pair of conductive pins, and an emitter which has a tip end with one atom or three atoms and which is connected to the filament. A supporting member is fixed to the base material, and the emitter is connected to the supporting member.

An electrode (1) of a discharge device (e.g. the cathode of a discharge lamp) having a side area (4) and a tip area (5) implanted with an emissive material dopant induced by ion implantation is disclosed. The side area (4) of the electrode (1) may be masked (3) during ion implantation or a diffusion barrier layer (7) may be added on the side area (4) after ion implantation.