An electron emission device having a narrow electron energy range and excellent electron emitting efficiency, and an electron microscope using the electron emission device. An electron emission device having a laminated structure in which a first electrode, an electron accelerating layer made of an insulating film, and a second electrode are laminated in this order, in which the second electrode through which electrons transmit and from whose surface electrons emit, and the energy width of the emitted electrons is 100 meV or more and 600 meV or less. For example, graphene having one or more layers and 20 layers or less can be used as the second electrode, and hexagonal boron nitride can be used as the insulating film.

An electron emission device having a narrow electron energy range and excellent electron emitting efficiency, and an electron microscope using the electron emission device. An electron emission device having a laminated structure in which a first electrode, an electron accelerating layer made of an insulating film, and a second electrode are laminated in this order, in which the second electrode through which electrons transmit and from whose surface electrons emit, and the energy width of the emitted electrons is 100 meV or more and 600 meV or less. For example, graphene having one or more layers and 20 layers or less can be used as the second electrode, and hexagonal boron nitride can be used as the insulating film.

Provided are an electron emission device having a novel structure and being capable of improving characteristics and/or extending a lifetime of a related-art electron emission device, and a method of manufacturing the electron emission device. The method of manufacturing an electron emission device includes: a step A of providing one of an aluminum substrate and an aluminum layer supported by a substrate; a step B of anodizing a surface of the one of the aluminum, substrate and the aluminum layer to form a porous alumina layer having a plurality of pores; a step C of applying silver nanoparticles into the plurality of pores to cause the plurality of pores to support the silver nanoparticles; a step D of applying, after the step C, an insulating layer forming solution to substantially an entire surface of the one of the aluminum substrate and the aluminum layer; a step E of forming, after the step D, an insulating layer by at least reducing a solvent included in the insulating layer forming solution; and a step F of forming an electrode on the insulating layer.

Provided are an electron emission device having a novel structure and being capable of improving characteristics and/or extending a lifetime of a related-art electron emission device, and a method of manufacturing the electron emission device. The method of manufacturing an electron emission device includes: a step A of providing one of an aluminum substrate and an aluminum layer supported by a substrate; a step B of anodizing a surface of the one of the aluminum, substrate and the aluminum layer to form a porous alumina layer having a plurality of pores; a step C of applying silver nanoparticles into the plurality of pores to cause the plurality of pores to support the silver nanoparticles; a step D of applying, after the step C, an insulating layer forming solution to substantially an entire surface of the one of the aluminum substrate and the aluminum layer; a step E of forming, after the step D, an insulating layer by at least reducing a solvent included in the insulating layer forming solution; and a step F of forming an electrode on the insulating layer.

A horizontal multilayer junction-edge field emitter includes a plurality of vertically-stacked multilayer structures separated by isolation layers. Each multilayer structure is configured to produce a 2-dimensional electron gas at a junction between two layers within the structure. The emitter also includes an exposed surface intersecting the 2-dimensional electron gas of each of the plurality of vertically-stacked multilayer structures to form a plurality of effectively one-dimensional horizontal line sources of electron emission.

A horizontal multilayer junction-edge field emitter includes a plurality of vertically-stacked multilayer structures separated by isolation layers. Each multilayer structure is configured to produce a 2-dimensional electron gas at a junction between two layers within the structure. The emitter also includes an exposed surface intersecting the 2-dimensional electron gas of each of the plurality of vertically-stacked multilayer structures to form a plurality of effectively one-dimensional horizontal line sources of electron emission.

A laminated body is provided in a circumferential shape with a gap formed in a part of a circumferential direction on a semiconductor layer. In the laminated body, a first insulating layer, a gate layer, a second insulating layer, and a drain layer are layered in this order from the semiconductor layer side. An impurity diffusion layer is formed on a surface of the semiconductor layer, and a backside electrode on a backside surface. The impurity diffusion layer extends from a position in contact with side walls in a channel space to an outside of the laminated body through a region corresponding to the gap on the surface of the semiconductor layer. A portion of the impurity diffusion layer beyond the laminated body is a contact region to which a wiring for applying a predetermined voltage is connected. A cover layer made of an insulating material is formed in an upper portion and a periphery of the annular portion including the laminated body and the gap.

Disclosed below are representative embodiments of methods, apparatus, and systems for generating electrons. For example, certain embodiments comprise a charge gating diamond QED based electron source, which can be suspended within the RF cavity of an electron injection system in a superconducting radiofrequency (SRF) electron accelerator. Embodiments of the disclosed technology are capable of producing low temperature (cold) electron beams, where temperature refers to the transverse energy in the extracted electron beam (or beam emittance). Embodiments of the disclosed technology can also exhibit enhanced charge replenishment capabilities by virtue of the material selected to suspend the electron source within the RF cavity of the electron injection system.

The present invention relates to an electron emitter, a method for manufacturing the same, and a light emitting apparatus comprising the same, and, more particularly, to an electron emitter comprising a semiconductor wafer having a nanostructure formed in at least a portion thereof. The present invention is capable of providing a large-area electron emitter, and also capable of providing a light emitting apparatus which has improved light emission efficiency and can be operated by an electron injection method.

The present invention relates to an electron emitter, a method for manufacturing the same, and a light emitting apparatus comprising the same, and, more particularly, to an electron emitter comprising a semiconductor wafer having a nanostructure formed in at least a portion thereof. The present invention is capable of providing a large-area electron emitter, and also capable of providing a light emitting apparatus which has improved light emission efficiency and can be operated by an electron injection method.