This electron emitting element includes a lower electrode, a surface electrode facing the lower electrode, a resistance layer arranged between the lower electrode and the surface electrode, and an insulating layer arranged between the lower electrode and the surface electrode. The resistance layer is an insulating resin layer containing conductive fine particles in a dispersed state. The insulating layer has a peripheral region for defining the electron emission region, and an emission control region which is arranged so as to overlap the electron emission region defined by the peripheral region. The emission control region is configured by a line-shaped insulating layer, a plurality of dot-shaped insulating layers, or both a line-shaped insulating layer and a plurality of dot-shaped insulating layers. The percentage of an area that the emission control region represents within an area of an electron emission region defined by the peripheral region is 2% or more and 60% or less.

An electron emission device having a narrow electron energy range and excellent electron emitting efficiency, and an electron microscope using the electron emission device. An electron emission device having a laminated structure in which a first electrode, an electron accelerating layer made of an insulating film, and a second electrode are laminated in this order, in which the second electrode through which electrons transmit and from whose surface electrons emit, and the energy width of the emitted electrons is 100 meV or more and 600 meV or less. For example, graphene having one or more layers and 20 layers or less can be used as the second electrode, and hexagonal boron nitride can be used as the insulating film.

An electron emission device having a narrow electron energy range and excellent electron emitting efficiency, and an electron microscope using the electron emission device. An electron emission device having a laminated structure in which a first electrode, an electron accelerating layer made of an insulating film, and a second electrode are laminated in this order, in which the second electrode through which electrons transmit and from whose surface electrons emit, and the energy width of the emitted electrons is 100 meV or more and 600 meV or less. For example, graphene having one or more layers and 20 layers or less can be used as the second electrode, and hexagonal boron nitride can be used as the insulating film.

An electron emission source is provided. The electron emission source includes a first electrode, an insulating layer, and a second electrode. The first electrode, the insulating layer, and the second electrode are successively stacked with each other. the second electrode is a graphene layer, and the graphene layer is an electron emission end to emit electron. A thickness of the graphene layer ranges from about 0.1 nanometers to about 50 nanometers.

This electron emitting element includes a lower electrode, a surface electrode facing the lower electrode, a resistance layer arranged between the lower electrode and the surface electrode, and an insulating layer arranged between the lower electrode and the surface electrode. The resistance layer is an insulating resin layer containing conductive fine particles in a dispersed state. The insulating layer has a peripheral region for defining the electron emission region, and an emission control region which is arranged so as to overlap the electron emission region defined by the peripheral region. The emission control region is configured by a line-shaped insulating layer, a plurality of dot-shaped insulating layers, or both a line-shaped insulating layer and a plurality of dot-shaped insulating layers. The percentage of an area that the emission control region represents within an area of an electron emission region defined by the peripheral region is 2% or more and 60% or less.

An electron emission source is provided. The electron emission source comprises a first electrode, an insulating layer, and a second electrode, The first electrode, the insulating layer, and the second electrode are successively stacked with each other. the second electrode is a graphene layer, and the graphene layer is an electron emission end to emit electron. A thickness of the graphene layer ranges from about 0.1 nanometers to about 50 nanometers.

A tunneling electro source, an array thereof and methods for making the same are provided. The tunneling electron source is a surface tunneling micro electron source having a planar multi-region structure. The tunneling electron source includes an insulating substrate, and two conductive regions and one insulating region arranged on a surface of the insulating substrate. The insulating region is arranged between the two conductive regions and abuts on the two conductive regions. Minimum spacing between the two conductive regions, which equals to a minimum width of the insulating region, is less than 100 nm.

A tunneling electro source, an array thereof and methods for making the same are provided. The tunneling electron source is a surface tunneling micro electron source having a planar multi-region structure. The tunneling electron source includes an insulating substrate, and two conductive regions and one insulating region arranged on a surface of the insulating substrate. The insulating region is arranged between the two conductive regions and abuts on the two conductive regions. Minimum spacing between the two conductive regions, which equals to a minimum width of the insulating region, is less than 100 nm.

An electron emitting device (100) includes a first electrode (12), a second electrode (52), and a semi-conductive layer (30) provided between the first electrode (12) and the second electrode (52). The semi-conductive layer (30) includes a porous alumina layer (32) having a plurality of pores (34) and silver (42) supported in the plurality of pores (34) of the porous alumina layer (32).

An electron emitting device (100) includes a first electrode (12), a second electrode (52), and a semi-conductive layer (30) provided between the first electrode (12) and the second electrode (52). The semi-conductive layer (30) includes a porous alumina layer (32) having a plurality of pores (34) and silver (42) supported in the plurality of pores (34) of the porous alumina layer (32).