Patent classifications
H01J9/125
METHOD OF MANUFACTURING ELECTRON MULTIPLIER BODY, PHOTOMULTIPLIER TUBE, AND PHOTOMULTIPLIER
A method of manufacturing an electron multiplier body, the method includes a step of preparing a first plate-like member having a surface and a back surface and a pair of second plate-like members, a step of forming, in the first plate-like member, a hole portion reaching from the front surface to the back surface, a step of constituting a laminated body by laminating the first and second plate-like members on each other so that the first plate-like member is interposed between the pair of second plate-like members to form a channel defined by the hole portion in the laminated body, a step of integrating the laminated body, a step of constituting a main body portion by cutting the integrated laminated body so that the channel is open, and a step of forming a resistive layer and a secondary electron multiplication layer on an inner surface of the channel.
Method of manufacturing electron multiplier body, photomultiplier tube, and photomultiplier
A method of manufacturing an electron multiplier body, the method includes a step of preparing a first plate-like member having a surface and a back surface and a pair of second plate-like members, a step of forming, in the first plate-like member, a hole portion reaching from the front surface to the back surface, a step of constituting a laminated body by laminating the first and second plate-like members on each other so that the first plate-like member is interposed between the pair of second plate-like members to form a channel defined by the hole portion in the laminated body, a step of integrating the laminated body, a step of constituting a main body portion by cutting the integrated laminated body so that the channel is open, and a step of forming a resistive layer and a secondary electron multiplication layer on an inner surface of the channel.
Reflection mode dynode
A device configured to convert or amplify a particle, the conversion or amplification being reliant on the impact of a particle on a surface of the device causing emission of one or more secondary electrons from the same surface. The device includes a carbon-based layer capable of secondary electron emission upon impact of a particle. The surface may be used to convert, for example, an ion into an electron signal, or an electron signal into an amplified electron signal, such as in conversion or amplification dynodes.
Microchannel plate and method of making the microchannel plate with an electron backscatter layer to amplify first strike electrons
A night vision system along with an image intensifier tube having a microchannel plate and method of forming the microchannel plate are provided. The microchannel plate comprises a plurality of spaced channels extending through the microchannel plate, wherein each channel sidewall surface near the input face of the microchannel plate comprises a series of layers formed thereon. The input face of the microchannel plate, as well as the sidewall surfaces of each channel near the input surfaces, are configured with an electron backscatter layer arranged between a contact metal layer and a secondary electron booster layer. When formed partially into the channel openings near the input face, the electron backscatter layer and overlying secondary electron booster layer are configured circumferentially around the sidewall surfaces and extend radially inward toward a central axis of each channel.
MICROCHANNEL PLATE AND METHOD OF MAKING THE MICROCHANNEL PLATE WITH AN ELECTRON BACKSCATTER LAYER TO AMPLIFY FIRST STRIKE ELECTRONS
A night vision system along with an image intensifier tube having a microchannel plate and method of forming the microchannel plate are provided. The microchannel plate comprises a plurality of spaced channels extending through the microchannel plate, wherein each channel sidewall surface near the input face of the microchannel plate comprises a series of layers formed thereon. The input face of the microchannel plate, as well as the sidewall surfaces of each channel near the input surfaces, are configured with an electron backscatter layer arranged between a contact metal layer and a secondary electron booster layer. When formed partially into the channel openings near the input face, the electron backscatter layer and overlying secondary electron booster layer are configured circumferentially around the sidewall surfaces and extend radially inward toward a central axis of each channel.