A negative ion source includes a plasma chamber, a microwave source, a negative ion converter, a magnetic filter and a beam formation mechanism. The plasma chamber contains gas to be ionized. The microwave source transmits microwaves to the plasma chamber to ionize the gas into atomic species including hyperthermal neutral atoms. The negative ion converter converts the hyperthermal neutral atoms to negative ions. The magnetic filter reduces a temperature of an electron density provided between the plasma chamber and the negative ion converter. The beam formation mechanism extract the negative ions.

An accelerator mass spectrometry measuring system is disclosed, including: an ECR high-current positive ion source subsystem; an injector subsystem; a high-current accelerator subsystem; a high-energy analysis subsystem; and a high-resolution detector subsystem; of which, the ECR high-current positive ion source subsystem, the injector subsystem, the high-current accelerator subsystem, high-energy analysis subsystem and a high-resolution detector subsystem are connected sequentially; the ECR high-current positive ion source subsystem is configured for generating high-current positive ions of multi-charge states; the high-current accelerator subsystem is configured for accelerating the high-current positive ions. The AMS system is high in beam, high in overall efficiency, and strong in how-down capability, and can greatly improve the abundance sensitivity of measurement.

An ion generating device including a time-varying electromagnetic power source; and a multi-antenna ion source including a plurality of live antennas electrically coupled to the power source; and a grounded antenna. A neutron generator, including a time-varying electromagnetic power source; a hermetically-sealed tube; a multi-antenna ion source within tube, the multi-antenna ion source including a plurality of live antennas electrically coupled to the time-varying electromagnetic power source; and at most one grounded antenna; an extractor adjacent to an aperture of the multi-antenna ion source; at least one magnet generating a magnetic field substantially parallel to a longitudinal axis of the multi-antenna ion source; a target within the hermetically-sealed tube; and a plurality of electrodes for accelerating and/or decelerating ions toward the target, where the power source operates at a frequency corresponding to a cyclotron frequency defined by a value of the magnetic field within the multi-antenna ion source.

An ion generating device including a time-varying electromagnetic power source; and a multi-antenna ion source including a plurality of live antennas electrically coupled to the power source; and a grounded antenna. A neutron generator, including a time-varying electromagnetic power source; a hermetically-sealed tube; a multi-antenna ion source within tube, the multi-antenna ion source including a plurality of live antennas electrically coupled to the time-varying electromagnetic power source; and at most one grounded antenna; an extractor adjacent to an aperture of the multi-antenna ion source; at least one magnet generating a magnetic field substantially parallel to a longitudinal axis of the multi-antenna ion source; a target within the hermetically-sealed tube; and a plurality of electrodes for accelerating and/or decelerating ions toward the target, where the power source operates at a frequency corresponding to a cyclotron frequency defined by a value of the magnetic field within the multi-antenna ion source.

An automatic adjustment method and an automatic adjustment device of a beam of a semiconductor apparatus, and a training method of a parameter adjustment model are provided. The automatic adjustment method of the beam of the semiconductor apparatus includes the following steps. The semiconductor apparatus generates the beam. A wave curve of the beam is obtained. The wave curve is segmented into several sections. The slope of each of the sections is obtained. Several environmental factors of the semiconductor apparatus are obtained. According to the slopes and the environmental factors, at least one parameter adjustment command of the semiconductor apparatus is analyzed through the parameter adjustment model.

An automatic adjustment method and an automatic adjustment device of a beam of a semiconductor apparatus, and a training method of a parameter adjustment model are provided. The automatic adjustment method of the beam of the semiconductor apparatus includes the following steps. The semiconductor apparatus generates the beam. A wave curve of the beam is obtained. The wave curve is segmented into several sections. The slope of each of the sections is obtained. Several environmental factors of the semiconductor apparatus are obtained. According to the slopes and the environmental factors, at least one parameter adjustment command of the semiconductor apparatus is analyzed through the parameter adjustment model.

The indirectly heated cathode ion source assembly employs a cathode having a cup shaped body with a base and a cylindrical periphery, a thermal barrier having a plurality of cylindrical foils concentric to the cathode to reduce thermal loss; and a holder receiving the cathode and the thermal barrier in concentric relation.

The indirectly heated cathode ion source assembly employs a cathode having a cup shaped body with a base and a cylindrical periphery, a thermal barrier having a plurality of cylindrical foils concentric to the cathode to reduce thermal loss; and a holder receiving the cathode and the thermal barrier in concentric relation.

A negative ion source includes a plasma chamber, a microwave source, a negative ion converter, a magnetic filter and a beam formation mechanism. The plasma chamber contains gas to be ionized. The microwave source transmits microwaves to the plasma chamber to ionize the gas into atomic species including hyperthermal neutral atoms. The negative ion converter converts the hyperthermal neutral atoms to negative ions. The magnetic filter reduces a temperature of an electron density provided between the plasma chamber and the negative ion converter. The beam formation mechanism extract the negative ions.

A negative ion source includes a plasma chamber, a microwave source, a negative ion converter, a magnetic filter and a beam formation mechanism. The plasma chamber contains gas to be ionized. The microwave source transmits microwaves to the plasma chamber to ionize the gas into atomic species including hyperthermal neutral atoms. The negative ion converter converts the hyperthermal neutral atoms to negative ions. The magnetic filter reduces a temperature of an electron density provided between the plasma chamber and the negative ion converter. The beam formation mechanism extract the negative ions.