An apparatus may include a cyclotron to receive an ion beam as an incident ion beam at an initial energy, and output the ion beam as an accelerated ion beam at an accelerated ion energy. The apparatus may further include an RF source to output an RF power signal to the cyclotron chamber, the RF power source comprising a variable power amplifier, and a movable stripper, translatable to intercept the ion beam within the cyclotron at a continuum of different positions.

A negative ion source includes a plasma chamber, a microwave source, a negative ion converter, a magnetic filter and a beam formation mechanism. The plasma chamber contains gas to be ionized. The microwave source transmits microwaves to the plasma chamber to ionize the gas into atomic species including hyperthermal neutral atoms. The negative ion converter converts the hyperthermal neutral atoms to negative ions. The magnetic filter reduces a temperature of an electron density provided between the plasma chamber and the negative ion converter. The beam formation mechanism extract the negative ions.

A negative ion source includes a plasma chamber, a microwave source, a negative ion converter, a magnetic filter and a beam formation mechanism. The plasma chamber contains gas to be ionized. The microwave source transmits microwaves to the plasma chamber to ionize the gas into atomic species including hyperthermal neutral atoms. The negative ion converter converts the hyperthermal neutral atoms to negative ions. The magnetic filter reduces a temperature of an electron density provided between the plasma chamber and the negative ion converter. The beam formation mechanism extract the negative ions.

The invention relates to a novel ion source, which uses method for the production of highly charged ions in the local ion traps created by an axially symmetric electron beam in the thick magnetic lens. The highly charged ions are produced in the separate local ion traps, which are created as a sequence of the focuses (F.sub.1, F.sub.2, and F.sub.3) of the electron beam (EB) rippled in the magnetic field (B(z)). Since the most acute focus is called the main one, the ion source is classified as main magnetic focus ion source (MaMFIS/T), which can also operate in the trapping regime. The electron current density in the local ion traps can be much greater than that in the case of Brillouin flow. For the ion trap with length of about 1 mm, the average electron current density of up to the order of 100 kA/cm.sup.2 can be achieved. Thus it allows one to produce ions in any charge state for all elements of the Periodic Table. In order to extract the ions, geometry of the electron beam is changed to a relatively smooth electron beam by setting the potential of the focusing electrode (W) of the electron gun negative with respect to the potential of the cathode (C).

The invention relates to a novel ion source, which uses method for the production of highly charged ions in the local ion traps created by an axially symmetric electron beam in the thick magnetic lens. The highly charged ions are produced in the separate local ion traps, which are created as a sequence of the focuses (F.sub.1, F.sub.2, and F.sub.3) of the electron beam (EB) rippled in the magnetic field (B(z)). Since the most acute focus is called the main one, the ion source is classified as main magnetic focus ion source (MaMFIS/T), which can also operate in the trapping regime. The electron current density in the local ion traps can be much greater than that in the case of Brillouin flow. For the ion trap with length of about 1 mm, the average electron current density of up to the order of 100 kA/cm.sup.2 can be achieved. Thus it allows one to produce ions in any charge state for all elements of the Periodic Table. In order to extract the ions, geometry of the electron beam is changed to a relatively smooth electron beam by setting the potential of the focusing electrode (W) of the electron gun negative with respect to the potential of the cathode (C).

An electron cyclotron resonance ion generator device includes a metal tube subjected to a first potential and pierced by a first cavity forming a plasma chamber intended to contain a plasma; a second cavity forming a waveguide configured to inject a high frequency wave into the plasma chamber, an extraction system including an upstream end connected to the plasma chamber and a downstream end configured to be connected to an ion transport line, the connecting flange being subjected to a second potential, a magnetic field generator, and a ceramic tube in contact with the metal tube, the ceramic tube surrounding the metal tube and at least a part of the extraction system.

An electron cyclotron resonance ion generator device includes a metal tube subjected to a first potential and pierced by a first cavity forming a plasma chamber intended to contain a plasma; a second cavity forming a waveguide configured to inject a high frequency wave into the plasma chamber, an extraction system including an upstream end connected to the plasma chamber and a downstream end configured to be connected to an ion transport line, the connecting flange being subjected to a second potential, a magnetic field generator, and a ceramic tube in contact with the metal tube, the ceramic tube surrounding the metal tube and at least a part of the extraction system.

An isotope generation apparatus is disclosed including: an ion beam source of any of the types described herein; an extractor for extracting the ion beam from the confinement region, where the beam includes a portion of multiply ionized ions in a selected final ionization state; a target including a target material; and an accelerator for accelerating the ion beam and directing the ion beam to the target. The ion beam directed to the target transmutes at least a portion of the target material to a radio-isotope in response to a nuclear reaction between ions in the selected final ion state and atoms of the target material.

An isotope generation apparatus is disclosed including: an ion beam source of any of the types described herein; an extractor for extracting the ion beam from the confinement region, where the beam includes a portion of multiply ionized ions in a selected final ionization state; a target including a target material; and an accelerator for accelerating the ion beam and directing the ion beam to the target. The ion beam directed to the target transmutes at least a portion of the target material to a radio-isotope in response to a nuclear reaction between ions in the selected final ion state and atoms of the target material.

An ion system for use in an etching system for etching at least a wafer using a gas. The ion system may include an ion chamber for containing charged particles generated from the gas. The ion system may also include a magnetic device surrounding at least a portion of the ion chamber. The magnetic device may affect the distribution of the charged particles in the ion chamber. The ion system may also include a grid assembly disposed between the ion chamber and the wafer when the wafer is etched. The charged particles may be provided through the grid assembly to etch the wafer when the wafer is etched.