The present invention has an object to reduce a risk of performance degradation caused to an ion generating device that is being manufactured. An ion generating device (1) includes: a discharge electrode (21) for generating ions by electric discharge, the discharge electrode having (i) a mounting part (33a) for mounting the discharge electrode on the ion generating device and (ii) a brush part including a plurality of linear electrically conductive members, and the mounting part (33a) binding a base end part of the brush part so as to hold the base end part, the ion generating device further including: an insulating sealing member (41) with which to seal the base end part of the mounting part (33a); and a protective resin (29) with which to cover at least a brush base end surface (25t).

A method and device for destroying and inhibiting exposure to microbes and infection includes a first element and a second element, and a power source. At least one of the elements includes antimicrobial metal, which, when energized by the power source, produces ions that are lethal to microbes. The device can be incorporated into virtually any useful object. During normal use of the object, electrical communication is established between the two elements, causing current supplied from the power source to flow through the antimicrobial metal. The two elements are configured and arranged to ensure that ions flowing from the antimicrobial metal flow through the region in which it is desired to kill microbes. The antimicrobial metal can be on the surface of the element, incorporated into the material making up the element, or provided in any other way that allows the antimicrobial effect to be achieved.

A method and device for destroying and inhibiting exposure to microbes and infection includes a first element and a second element, and a power source. At least one of the elements includes antimicrobial metal, which, when energized by the power source, produces ions that are lethal to microbes. The device can be incorporated into virtually any useful object. During normal use of the object, electrical communication is established between the two elements, causing current supplied from the power source to flow through the antimicrobial metal. The two elements are configured and arranged to ensure that ions flowing from the antimicrobial metal flow through the region in which it is desired to kill microbes. The antimicrobial metal can be on the surface of the element, incorporated into the material making up the element, or provided in any other way that allows the antimicrobial effect to be achieved.

An ion source is provided. The ion source includes a plasma generation chamber, a plate member, and an extraction electrode. The plasma generation chamber is supplied with a halogen-containing material. The plate member is provided on an end of the plasma generation chamber located on a side toward which an ion beam is extracted. The extraction electrode is disposed downstream of the plate member. The plate member is formed with a gas supply passage via which hydrogen gas is supplied to the extraction electrode.

An ion source includes a chamber having a first end, a second end opposite the first end, a first wall extending from the first end to the second end, and a second wall opposite the first wall. The ion source also includes a source filament at the first end of the chamber and configured to emit electrons and a first amount of heat, a beam aperture at the second wall of the chamber, and one or more heaters positioned within the chamber and between the second end and the beam aperture and operable to provide a second amount of heat. The one or more heaters are positioned and operable such that the second amount of heat balances the first amount of heat to reduce or eliminate a temperature gradient in the chamber.

An ion source includes a chamber having a first end, a second end opposite the first end, a first wall extending from the first end to the second end, and a second wall opposite the first wall. The ion source also includes a source filament at the first end of the chamber and configured to emit electrons and a first amount of heat, a beam aperture at the second wall of the chamber, and one or more heaters positioned within the chamber and between the second end and the beam aperture and operable to provide a second amount of heat. The one or more heaters are positioned and operable such that the second amount of heat balances the first amount of heat to reduce or eliminate a temperature gradient in the chamber.

A method for operating a particle beam generator for a particle beam device, and a particle beam device for carrying out this method, are provided. An extractor voltage may be set to an extractor value using a first variable voltage supply unit. An emission current of the particle beam generator may be measured. When the emission current of the particle beam generator decreases, a suppressor voltage applied to a suppressor electrode may be adjusted using a second variable voltage supply unit such that a specific emission current of the particle beam generator is reached or maintained. When the emission current of the particle beam generator increases, the extractor voltage applied to the extractor electrode may be adjusted using the first variable voltage supply unit such that the specific emission current of the particle beam generator is reached or maintained.

A method for operating a particle beam generator for a particle beam device, and a particle beam device for carrying out this method, are provided. An extractor voltage may be set to an extractor value using a first variable voltage supply unit. An emission current of the particle beam generator may be measured. When the emission current of the particle beam generator decreases, a suppressor voltage applied to a suppressor electrode may be adjusted using a second variable voltage supply unit such that a specific emission current of the particle beam generator is reached or maintained. When the emission current of the particle beam generator increases, the extractor voltage applied to the extractor electrode may be adjusted using the first variable voltage supply unit such that the specific emission current of the particle beam generator is reached or maintained.

Metallic ion source for resolving the issue of not being able to produce high-density ions efficiently with small-scale ion sources in situations where an electron beam injecting scheme is employed as the evaporation source to evaporate a solid, and for producing high-density ions highly efficiently. Designed to be compact and lightweight, the metallic ion source also facilitates selection of the ion extraction direction. The ion source, structured exploiting the characteristic physical property that whether ionization takes place is dependent on the energy of the electron beam, is furnished with a dual evaporation-plasma chamber that inside the same chamber enables a high-speed electron beam, whose ionization efficiency is low, and low-speed electrons generated by electric discharge, whose ionization efficiency is high, to participate independently and simultaneously in, respectively, evaporation of precursor and ionization action.

Metallic ion source for resolving the issue of not being able to produce high-density ions efficiently with small-scale ion sources in situations where an electron beam injecting scheme is employed as the evaporation source to evaporate a solid, and for producing high-density ions highly efficiently. Designed to be compact and lightweight, the metallic ion source also facilitates selection of the ion extraction direction. The ion source, structured exploiting the characteristic physical property that whether ionization takes place is dependent on the energy of the electron beam, is furnished with a dual evaporation-plasma chamber that inside the same chamber enables a high-speed electron beam, whose ionization efficiency is low, and low-speed electrons generated by electric discharge, whose ionization efficiency is high, to participate independently and simultaneously in, respectively, evaporation of precursor and ionization action.