A method and device for destroying and inhibiting exposure to microbes and infection includes a first element and a second element, and a power source. At least one of the elements includes antimicrobial metal, which, when energized by the power source, produces ions that are lethal to microbes. The device can be incorporated into virtually any useful object. During normal use of the object, electrical communication is established between the two elements, causing current supplied from the power source to flow through the antimicrobial metal. The two elements are configured and arranged to ensure that ions flowing from the antimicrobial metal flow through the region in which it is desired to kill microbes. The antimicrobial metal can be on the surface of the element, incorporated into the material making up the element, or provided in any other way that allows the antimicrobial effect to be achieved.

A method and device for destroying and inhibiting exposure to microbes and infection includes a first element and a second element, and a power source. At least one of the elements includes antimicrobial metal, which, when energized by the power source, produces ions that are lethal to microbes. The device can be incorporated into virtually any useful object. During normal use of the object, electrical communication is established between the two elements, causing current supplied from the power source to flow through the antimicrobial metal. The two elements are configured and arranged to ensure that ions flowing from the antimicrobial metal flow through the region in which it is desired to kill microbes. The antimicrobial metal can be on the surface of the element, incorporated into the material making up the element, or provided in any other way that allows the antimicrobial effect to be achieved.

A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

An ion source includes a chamber having a first end, a second end opposite the first end, a first wall extending from the first end to the second end, and a second wall opposite the first wall. The ion source also includes a source filament at the first end of the chamber and configured to emit electrons and a first amount of heat, a beam aperture at the second wall of the chamber, and one or more heaters positioned within the chamber and between the second end and the beam aperture and operable to provide a second amount of heat. The one or more heaters are positioned and operable such that the second amount of heat balances the first amount of heat to reduce or eliminate a temperature gradient in the chamber.

An ion source includes a chamber having a first end, a second end opposite the first end, a first wall extending from the first end to the second end, and a second wall opposite the first wall. The ion source also includes a source filament at the first end of the chamber and configured to emit electrons and a first amount of heat, a beam aperture at the second wall of the chamber, and one or more heaters positioned within the chamber and between the second end and the beam aperture and operable to provide a second amount of heat. The one or more heaters are positioned and operable such that the second amount of heat balances the first amount of heat to reduce or eliminate a temperature gradient in the chamber.

An inventive arrangement is made to produce for negative ions. It comprises a chamber with a sputtering gas, a cathode, an alkali metal in order to decrease a work function of the cathode, and an extraction channel. Further the arrangement comprises a voltage source for providing an electric field in the chamber, which electric field's lowest voltage level is on the cathode, and a light source to provide light onto the cathode.

An inventive arrangement is made to produce for negative ions. It comprises a chamber with a sputtering gas, a cathode, an alkali metal in order to decrease a work function of the cathode, and an extraction channel. Further the arrangement comprises a voltage source for providing an electric field in the chamber, which electric field's lowest voltage level is on the cathode, and a light source to provide light onto the cathode.