A charged particle beam device according to the present invention comprises a charged particle source that emits charged particles, a detection circuit that detects electrons which are generated by a sample as a result of irradiation with the charged particles, and a power storage device (107_VHD) that holds direct voltage, and comprises a charge circuit (107_CHG) that charges the power storage device with supplied voltage, and a control circuit (107_CTL) that controls the charge circuit such that charging is carried out in a period in which no sample is measured, wherein the direct voltage held by the power storage device (107_VHD) is used as operating voltage.

Disclosed herein are radio frequency (RF) cavities and systems including such RF cavities. The RF cavities are characterized as having an insert with at least one sidewall coated with a material to prevent charge build up without affecting RF input power and that is heat and vacuum compatible. One example RF cavity includes a dielectric insert, the dielectric insert having an opening extending from one side of the dielectric insert to another to form a via, and a coating layer disposed on an inner surface of the dielectric insert, the inner surface facing the via, wherein the coating layer has a thickness and a resistivity, the thickness less than a thickness threshold, and the resistivity greater than a resistivity threshold, wherein the thickness and resistivity thresholds are based partly on operating parameters of the RF cavity.

The ion implantation method includes (a) moving a wafer adjusted to have a first implantation angle with respect to an ion beam from a beam irradiation range toward a beam non-irradiation range; (b) starting a change of the wafer from the first implantation angle to a second implantation angle while the wafer is moved within the beam non-irradiation range after the wafer having the first implantation angle is moved from the beam irradiation range; (c-1) reversing a movement direction of the wafer at an end of the beam non-irradiation range and moving the wafer toward the beam irradiation range; and (c-2) completing the change of the wafer from the first implantation angle to the second implantation angle while the wafer is moved within the beam non-irradiation range before the wafer is returned to the beam irradiation range.

A multi-electron beam writing apparatus includes a light source array to include plural light sources and generate plural first lights, a multi-lens array to include plural first lenses, and to divide the plural first lights into plural second lights by that each of the plural first lights illuminates a corresponding lens set of plural lens sets each composed of plural second lenses being a portion of the plural first lenses and by that each of lenses, being at least a part of the plural second lenses, is irradiated with two or more first lights of the plural first lights, a photoemissive surface to receive the plural second lights through its upper surface, and emit multiple photoelectron beams from its back surface, and a blanking aperture array mechanism to perform an individual blanking control by individually switching between ON and OFF of each of the multiple photoelectron beams.

Provided is an ion implanter or the like capable of shortening a replacement time of workpieces. An ion implantation method includes (a) deflecting an ion beam by at least one of an electric field and a magnetic field in an irradiation-disabled direction in which a wafer is incapable of being irradiated with the ion beam after a first wafer is irradiated with the ion beam directed in an irradiation-enabled direction in which the wafer is capable of being irradiated with the ion beam; (b) moving the first wafer from an ion implantation position, subsequently to the step (a); (e) disposing a second wafer different from the first wafer at the ion implantation position, subsequently to the step (b); and (f) returning the ion beam from the irradiation-disabled direction to the irradiation-enabled direction, subsequently to the step (e).

The invention relates to an exposure apparatus and a method for projecting a charged particle beam onto a target. The exposure apparatus comprises a charged particle optical arrangement comprising a charged particle source for generating a charged particle beam and a charged particle blocking element and/or a current limiting element for blocking at least a part of a charged particle beam from a charged particle source. The charged particle blocking element and the current limiting element comprise a substantially flat substrate provided with an absorbing layer comprising Boron, Carbon or Beryllium. The substrate further preferably comprises one or more apertures for transmitting charged particles. The absorbing layer is arranged spaced apart from the at least one aperture.

A device may include an electron source, a detector, and a deflector. The electron source may be directed toward a sample area. The detector may receive an electron signal or an electron-induced signal. A deflector may be positioned between the electron source and the sample. The deflector may modulate an intensity of the electron source directed to the sample area according to an electron dose waveform having a continuously variable temporal profile.

In a particle beam irradiation system, upon receipt of a signal to stop irradiation of a charged particle beam, the signal outputted from a scanning controller, an accelerator and transport system controller stops emission of the charged particle beam from a charged particle beam generation unit to the irradiation unit, the scanning controller determines, according to an irradiation dose of the charged particle beam at one of a plurality of spots that has been irradiated with the charged particle beam until immediately before the accelerator and transport system controller stops the emission, the irradiation dose measured by the irradiation dose monitor from when the signal to stop the irradiation is outputted, whether or not to skip the irradiation of the charged particle beam at another one of the plurality of spots subsequent to the one of the plurality of spots, so as to control the accelerator and transport system controller.

A semiconductor device according to an embodiment includes: a substrate including a plurality of through holes provided at predetermined intervals along a first direction in a substrate surface and along a second direction intersecting the first direction in the substrate surface; an insulating layer provided on the substrate, the insulating layer being penetrated by the through holes; a plurality of first electrodes provided on the insulating layer, the first electrodes being adjacent to the respective through holes in the first direction; a plurality of second electrodes provided on the insulating layer, the second electrodes being adjacent to the respective through holes in the first direction, the second electrodes being provided to face the first electrodes, the second electrodes being held at a predetermined potential; and a wiring layer provided on the insulating layer, the wiring layer electrically connecting the adjacent second electrodes.

A semiconductor device according to the embodiments includes: a first substrate having a plurality of first through-holes; a plurality of first electrodes provided on the first substrate to be adjacent to the respective first through-holes; a plurality of second electrodes provided on the first substrate to be adjacent to the respective first through-holes and to face the respective first electrodes; and a second substrate provided to face the first substrate, the second substrate having a plurality of second through-holes facing the respective first through-holes, at least a surface of the second substrate facing the first substrate having conductivity, the second substrate being electrically connected to the second electrodes.