The invention relates to a multi-beam pattern definition device for use in a particle-beam processing or inspection apparatus, said device being adapted to be irradiated with a beam of electrically charged particles and allow passage of the beam through a plurality of apertures thus forming a corresponding number of beamlets, said device comprising an aperture array device in which at least two sets of apertures are realized, an opening array device located downstream of the aperture array device having a plurality of openings configured for the passage of beamlets, said opening array device comprises impact regions, wherein charged impinge upon said impact regions.

In one embodiment, a coverage calculating method is for calculating a coverage of a pattern in each of pixel regions obtained by dividing a writing region onto which the pattern is to be written by irradiation with a charged particle beam. Each of the pixel regions has a predetermined size. The method includes generating a plurality of first pixel regions by virtually dividing the writing region, the first pixel regions each having a first size, calculating a coverage of a pattern in the first pixel region, generating a plurality of second pixel regions by virtually dividing the first pixel region, the second pixel regions each having a second size smaller than the first size, selecting a second pixel region approximating a pattern shape in the first pixel region, and calculating a coverage in the selected second pixel region.

The present invention quickly calculates values of optimal excitation parameters which are set in lenses in multiple stages. A multi charged particle beam adjustment method includes forming a multi charged particle beam, calculating, for each of lenses in two or more stages disposed corresponding to object lenses in two or more stages, a first rate of change and a second rate of change in response to change in at least an excitation parameter, the first rate of change being a rate of change in a demagnification level of a beam image of the multi charged particle beam, the second rate of change being a rate of change in a rotation level of the beam image, and calculating a first amount of correction to the excitation parameter of each of the lenses based on an amount of correction to the demagnification level and the rotation level of the beam image, the first rate of change, and the second rate of change.

A device may include an electron source, a detector, and a deflector. The electron source may be directed toward a sample area. The detector may receive an electron signal or an electron-induced signal. A deflector may be positioned between the electron source and the sample. The deflector may modulate an intensity of the electron source directed to the sample area according to an electron dose waveform having a continuously variable temporal profile.

A device may include an electron source, a detector, and a deflector. The electron source may be directed toward a sample area. The detector may receive an electron signal or an electron-induced signal. A deflector may be positioned between the electron source and the sample. The deflector may modulate an intensity of the electron source directed to the sample area according to an electron dose waveform having a continuously variable temporal profile.

A particle beam system, such as a multi-beam particle microscope, includes a multi-beam deflection device and a beam stop. The multi-beam deflection device is arranged in the particle-optical beam path downstream of the multi-beam generator and upstream of the beam switch of the particle beam system. The multi-beam deflection device serves collectively blanks a multiplicity of charged individual particle beams. These impinge on a beam stop, which is arranged in the particle-optical beam path level with a site at which a particle beam diameter is reduced or is at a minimum. By way of example, such sites are the cross-over plane of the individual particle beams or an intermediate image plane. Associated methods for operating the particle beam system and associated computer program products are disclosed.

Systems and methods for observing a sample in a multi-beam apparatus are disclosed. A charged particle optical system may include a deflector configured to form a virtual image of a charged particle source and a transfer lens configured to form a real image of the charged particle source on an image plane. The image plane may be formed at least near a beam separator that is configured to separate primary charged particles generated by the source and secondary charged particles generated by interaction of the primary charged particles with a sample. The image plane may be formed at a deflection plane of the beam separator. The multi-beam apparatus may include a charged-particle dispersion compensator to compensate dispersion of the beam separator. The image plane may be formed closer to the transfer lens than the beam separator, between the transfer lens and the charged-particle dispersion compensator.

Inspection systems and methods are disclosed. An inspection system may include a first energy source configured to provide a first landing energy beam and a second energy source configured to provide a second landing energy beam. The inspection system may also include a beam controller configured to selectively deliver one of the first and second landing energy beams towards a same field of view, and to switch between delivery of the first and second landing energy beams according to a mode of operation of the inspection system.

Provided is a transmission electron microscope capable of obtaining a hollow-cone dark-field image and visually displaying irradiation conditions thereof. The transmission electron microscope is provided with an irradiation unit for irradiating a specimen with an electron beam, an objective lens for causing the electron beam transmitted through the specimen to form an image, beam deflectors for deflecting the electron beam, said beam deflectors being positioned higher than a position where the specimen is to be placed, an objective movable aperture for passing only a portion of the electron beam transmitted through the specimen, and a deflection coil control unit. The deflection coil control unit controls a deflection angle of the electron beam using the beam deflectors such that the specimen is irradiated with the electron beam at a predetermined angle with respect to an optical axis while the electron beam is moving in a precessional manner and such that only a diffracted wave and/or a scattered wave having a desired angle among diffracted waves and/or scattered waves generated when the electron beam is transmitted through the specimen passes through the objective movable aperture.

Apparatus for a multi-source ion beam etching (IBE) system are provided herein. In some embodiments, a multi-source IBE system includes a multi-source lid comprising a multi-source adaptor and a lower chamber adaptor, a plurality of IBE sources coupled to the multi-source adaptor, a rotary shield assembly coupled to a shield motor mechanism configured to rotate the rotary shield, wherein the shield motor mechanism is coupled to a top portion of the multi-source lid, and wherein the rotary shield includes a body that has one IBE source opening formed through the body, and at least one beam conduit that engages the one IBE source opening in the rotary shield on one end, and engages the bottom portion of the IBE sources on the opposite end of the beam conduit.