A multi-electron beam image acquisition apparatus includes a multiple-beam forming mechanism to form multiple primary electron beams, a primary-electron optical system to irradiate 1a sample with the multiple primary electron beams, a beam separator, arranged at a position conjugate to an image plane of each of the multiple primary electron beams, to form an electric field and a magnetic field to be mutually perpendicular, to separate multiple secondary electron beams, emitted from the sample due to irradiation with the multiple primary electron beams, from the multiple primary electron beams by using actions of the electric field and the magnetic field, and to have a lens action on the multiple secondary electron beams in at least one of the electric field and the magnetic field, a multi-detector to detect the multiple secondary electron beams, and a secondary-electron optical system to lead the multiple secondary electron beams to the multi-detector.

A multi-electron beam image acquisition apparatus includes a multiple-beam forming mechanism to form multiple primary electron beams, a primary-electron optical system to irradiate 1a sample with the multiple primary electron beams, a beam separator, arranged at a position conjugate to an image plane of each of the multiple primary electron beams, to form an electric field and a magnetic field to be mutually perpendicular, to separate multiple secondary electron beams, emitted from the sample due to irradiation with the multiple primary electron beams, from the multiple primary electron beams by using actions of the electric field and the magnetic field, and to have a lens action on the multiple secondary electron beams in at least one of the electric field and the magnetic field, a multi-detector to detect the multiple secondary electron beams, and a secondary-electron optical system to lead the multiple secondary electron beams to the multi-detector.

Apparatus include a plurality of electrode arrangements spaced apart from each other opposite an ion propagation axis and defining an ion transfer channel that extends along the ion propagation axis that tapers between an input end that is situated to receive ions and an output end that is situated to couple the received ions to an input end of an ion guide. Methods include positioning a plurality of electrode arrangements at oblique angles opposite an ion propagation axis so as to form a ion transfer channel that tapers between an input end and an output end, and coupling the output end of the ion transfer channel to an input end of an ion optical element so as to direct ions in the ion transfer channel into the ion optical element. Related systems are also disclosed.

Apparatus include a plurality of electrode arrangements spaced apart from each other opposite an ion propagation axis and defining an ion transfer channel that extends along the ion propagation axis that tapers between an input end that is situated to receive ions and an output end that is situated to couple the received ions to an input end of an ion guide. Methods include positioning a plurality of electrode arrangements at oblique angles opposite an ion propagation axis so as to form a ion transfer channel that tapers between an input end and an output end, and coupling the output end of the ion transfer channel to an input end of an ion optical element so as to direct ions in the ion transfer channel into the ion optical element. Related systems are also disclosed.

A wafer support device includes a support base having a wafer-facing surface, the support base comprising a heater, and an electrostatic chuck supported by the support base, the electrostatic chuck having an attraction surface configured to attract a wafer for wafer processing. During the wafer processing, the wafer-facing surface and the attraction surface are positioned at respective different positions in a direction perpendicular to the wafer-facing surface so that the attraction surface is separated from the wafer-facing surface by a distance.

A wafer support device includes a support base having a wafer-facing surface, the support base comprising a heater, and an electrostatic chuck supported by the support base, the electrostatic chuck having an attraction surface configured to attract a wafer for wafer processing. During the wafer processing, the wafer-facing surface and the attraction surface are positioned at respective different positions in a direction perpendicular to the wafer-facing surface so that the attraction surface is separated from the wafer-facing surface by a distance.

An ion source capable of extracting a ribbon ion beam with improved vertical angular uniformity is disclosed. The extraction plate and extraction optics are designed such that there is at least one non-uniform gap between adjacent components. A non-uniform gap may be effective in reducing angular spread non-uniformity of the extracted ribbon ion beam. Specifically, for a given gap in the Z direction, ions extracted from regions with lower plasma density may have more vertical angular spread. A larger gap in the Z direction between components in this region may make the vertical angular spread closer to the vertical angular spread of ions extracted from regions with higher plasma density. The non-uniform gap may be created by having an extraction plate that is flat or curved and electrodes that are flat, convex or concave. In certain embodiments, the non-uniform gap is located between the extraction plate and the suppression electrode.

An ion source capable of extracting a ribbon ion beam with improved vertical angular uniformity is disclosed. The extraction plate and extraction optics are designed such that there is at least one non-uniform gap between adjacent components. A non-uniform gap may be effective in reducing angular spread non-uniformity of the extracted ribbon ion beam. Specifically, for a given gap in the Z direction, ions extracted from regions with lower plasma density may have more vertical angular spread. A larger gap in the Z direction between components in this region may make the vertical angular spread closer to the vertical angular spread of ions extracted from regions with higher plasma density. The non-uniform gap may be created by having an extraction plate that is flat or curved and electrodes that are flat, convex or concave. In certain embodiments, the non-uniform gap is located between the extraction plate and the suppression electrode.

A charged particle beam device includes a plurality of detectors configured to detect one or more signal charged particle beams caused by irradiation on a sample with one or more primary charged particle beams, and a control system. The control system is configured to measure an intensity distribution of the one or more signal charged particle beams detected by the plurality of detectors, and correct the intensity distribution by using a correction function. The control system is configured to generate an image based on the corrected intensity distribution.

A semiconductor manufacturing apparatus according to the present embodiment includes a stage on which a wafer can be placed. A separator separates a beam of impurities to be introduced into the wafer into an ion component and a neutral component. A controller switches the semiconductor manufacturing apparatus between a first mode and a second mode, where in the first mode, the ion component is introduced into the wafer and in the second mode, the neutral component is introduced into the wafer.