An ion implanter may include an ion source, arranged to generate a continuous ion beam, a DC acceleration system, to accelerate the continuous ion beam, as well as an AC linear accelerator to receive the continuous ion beam and to output a bunched ion beam. The ion implanter may also include an energy spreading electrode assembly, to receive the bunched ion beam and to apply an RF voltage between a plurality of electrodes of the energy spreading electrode assembly, along a local direction of propagation of the bunched ion beam.

An ion implantation has an ion source and a mass analyzer configured to form and mass analyze an ion beam. A bending element is positioned downstream of the mass analyzer, and respective first and second measurement apparatuses are positioned downstream and upstream of the bending element and configured to determine a respective first and second ion beam current of the ion beam. A workpiece scanning apparatus scans the workpiece through the ion beam. A controller is configured to determine an implant current of the ion beam at the workpiece and to control the workpiece scanning apparatus to control a scan velocity of the workpiece based on the implant current. The determination of the implant current of the ion beam is based, at least in part, on the first ion beam current and second ion beam current.

An ion implantation has an ion source and a mass analyzer configured to form and mass analyze an ion beam. A bending element is positioned downstream of the mass analyzer, and respective first and second measurement apparatuses are positioned downstream and upstream of the bending element and configured to determine a respective first and second ion beam current of the ion beam. A workpiece scanning apparatus scans the workpiece through the ion beam. A controller is configured to determine an implant current of the ion beam at the workpiece and to control the workpiece scanning apparatus to control a scan velocity of the workpiece based on the implant current. The determination of the implant current of the ion beam is based, at least in part, on the first ion beam current and second ion beam current.

An environmental sensor may acquire data related to flux and energy of charged particles in an environment for using the data to determine, in substantially real time, whether the environment is conducive to an anomaly caused by the charged particles. The sensor may include an electrostatic analyzer structurally configured for charged particle detection, the electrostatic analyzer generating controllable electric fields to provide energy filtering of incoming charged particles, where, after filtering, the charged particles impact a charge multiplier to establish a detectable signal. The sensor may further include a plurality of silicon detector telescopes structurally configured to collectively detect electrons having energy within the range of about 100 electronvolts (eV) to about 5 mega-electronvolts (MeV) and to collectively detect protons having energy within the range of about 2 MeV to about 100 MeV.

An environmental sensor may acquire data related to flux and energy of charged particles in an environment for using the data to determine, in substantially real time, whether the environment is conducive to an anomaly caused by the charged particles. The sensor may include an electrostatic analyzer structurally configured for charged particle detection, the electrostatic analyzer generating controllable electric fields to provide energy filtering of incoming charged particles, where, after filtering, the charged particles impact a charge multiplier to establish a detectable signal. The sensor may further include a plurality of silicon detector telescopes structurally configured to collectively detect electrons having energy within the range of about 100 electronvolts (eV) to about 5 mega-electronvolts (MeV) and to collectively detect protons having energy within the range of about 2 MeV to about 100 MeV.

An ion implantation device (20) is provided comprising an energy filter (25) with a structured membrane, wherein the energy filter (25) is heated by absorbed energy from the ion beam, and at least one additional heating element (50a-d, 55a-d, 60, 70) for heating the energy filter (25).

An ion implantation device (20) is provided comprising an energy filter (25) with a structured membrane, wherein the energy filter (25) is heated by absorbed energy from the ion beam, and at least one additional heating element (50a-d, 55a-d, 60, 70) for heating the energy filter (25).

A method of producing an implantation ion energy filter, suitable for processing a power semiconductor device. In one example, the method includes creating a preform having a first structure; providing an energy filter body material; and structuring the energy filter body material by using the preform, thereby establishing an energy filter body having a second structure.

A method of producing an implantation ion energy filter, suitable for processing a power semiconductor device. In one example, the method includes creating a preform having a first structure; providing an energy filter body material; and structuring the energy filter body material by using the preform, thereby establishing an energy filter body having a second structure.

The purpose of the present invention is to reduce the amount of charged particles that are lost by colliding with the interior of a column of a charged particle beam device, and detect charged particles with high efficiency. To achieve this purpose, proposed is a charged particle beam device provided with: an objective lens that focuses a charged particle beam; a detector that is disposed between the objective lens and a charged particle source; a deflector that deflects charged particles emitted from a sample such that the charged particles separate from the axis of the charged particle beam; and a plurality of electrodes that are disposed between the deflector and the objective lens and that form a plurality of electrostatic lenses for focusing the charged particles emitted from the sample on a deflection point of the deflector.