An analytical device for analysing ions is provided comprising a separator 2 for separating ions according to a physico-chemical property and an interface 3 comprising one or more ion guides. A quadrupole rod set mass filter 4 is arranged downstream of the interface 3. A control system is arranged and adapted: (i) to transmit a first group of ions which emerges from the separator 2 through the interface 3 with a first transit time t1; and (ii) to transmit a second group of ions which subsequently emerges from the separator 2 through the interface 3 with a second different transit time t2.

An analytical device for analysing ions is provided comprising a separator 2 for separating ions according to a physico-chemical property and an interface 3 comprising one or more ion guides. A quadrupole rod set mass filter 4 is arranged downstream of the interface 3. A control system is arranged and adapted: (i) to transmit a first group of ions which emerges from the separator 2 through the interface 3 with a first transit time t1; and (ii) to transmit a second group of ions which subsequently emerges from the separator 2 through the interface 3 with a second different transit time t2.

A method of forming a patterned hard mask on a surface of a substrate uses an accelerated neutral beam with carbon atoms.

A deceleration apparatus capable of decelerating a short spot beam or a tall ribbon beam is disclosed. In either case, effects tending to degrade the shape of the beam profile are controlled. Caps to shield the ion beam from external potentials are provided. Electrodes whose position and potentials are adjustable are provided, on opposite sides of the beam, to ensure that the shape of the decelerating and deflecting electric fields does not significantly deviate from the optimum shape, even in the presence of the significant space-charge of high current low-energy beams of heavy ions.

A deceleration apparatus capable of decelerating a short spot beam or a tall ribbon beam is disclosed. In either case, effects tending to degrade the shape of the beam profile are controlled. Caps to shield the ion beam from external potentials are provided. Electrodes whose position and potentials are adjustable are provided, on opposite sides of the beam, to ensure that the shape of the decelerating and deflecting electric fields does not significantly deviate from the optimum shape, even in the presence of the significant space-charge of high current low-energy beams of heavy ions.

The plasma is formed between electrodes to be energized from an electric power source, containing a partially ionized mass having a luminescence region including neutral atoms (NA), primary electrons (PE), secondary electrons (SE), and ions.

The method comprises the interspersed steps of: accelerating the primary electrons (PE) toward one of said electrodes (10) polarized by a short, positive, high voltage pulse, impacting primary electrons (PE) against said electrode (10) and ejecting secondary electrons (SE) from it; subsequently, accelerating the secondary electrons (SE) toward the luminescence region by polarization of said electrode (10) by a negative voltage with a lower voltage pulse colliding the secondary electrons with neutral atoms (NA) and producing positive ions (PI) and derived electrons (DE); the negative pulse must have a period of time sufficient to accelerate the positive ions (PI) of the luminescent region towards the electrodes 10, striking the surface of said electrodes; repeating the previous steps in order to obtain a steady state plasma with a desired degree of ionization. The control of the intensity and the period of the positive and negative pulses allow the control of the degree of ionization and the volume of the luminescent region of the plasma.

An ion beam irradiation apparatus is provided. The apparatus includes an ion source, a mass separator, and an energy filter. The mass separator sorts dopant ions having a specific mass number and valence from an ion beam extracted from the ion source, and outputs the dopant ions. The energy filter is formed to define a beam passing region for allowing the ion beam to pass therethrough, and configured to have a given filter potential in response to application of a voltage thereto to separate passable ions capable of passing through the beam passing region and non-passable ions incapable of passing through the beam passing region, from each other by a difference in ion energy. The given filter potential is set such that the dopant ions are included in the passable ions, and a portion of unwanted ions which cannot be separated from the dopant ions by the mass separator are included in the non-passable ions.

Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

A beamline ion implanter and a method of operating a beamline ion implanter. A method may include performing an ion implantation procedure during a first time period on a first set of substrates, in a process chamber of the ion implanter, and performing a first pressure-control routine during a second time period by: introducing a predetermined gas to reach a predetermined pressure into at least a downstream portion of the beam-line for a second time period. The method may include, after completion of the first pressure-control routine, performing the ion implantation procedure on a second set of substrates during a third time period.

A beamline ion implanter and a method of operating a beamline ion implanter. A method may include performing an ion implantation procedure during a first time period on a first set of substrates, in a process chamber of the ion implanter, and performing a first pressure-control routine during a second time period by: introducing a predetermined gas to reach a predetermined pressure into at least a downstream portion of the beam-line for a second time period. The method may include, after completion of the first pressure-control routine, performing the ion implantation procedure on a second set of substrates during a third time period.