A charged particle beam device includes a lens barrel having a charged particle source, a sample chamber in which a sample to be irradiated with a charged particle beam is provided, and a heat emission type electron source disposed in the sample chamber and maintained at a lower potential than that of an inner wall of the sample chamber, in which the inside of the sample chamber is cleaned by electrons (e−) emitted from the heat emission type electron source after a heating current is generated by applying a voltage from an electron source power supply. The heat emission type electron source is maintained at a lower potential than that of the inner wall of the sample chamber by applying a negative voltage to the heat emission type electron source using a bias power supply. A magnitude of the negative voltage applied to the heat emission type electron source is preferably about 30 to 1000 V, particularly preferably about 60 to 120 V.

A multi-beam electron microscope for ECCI is provided. The electron microscope has a platform, on which a crystalline sample is placed. At least a first electron source and a second electron source of the electron microscope are mounted to a housing. The housing is tiltable with respect to a longitudinal direction through a pivot for forming a fulcrum, such that the first electron source and the second electron source are tilted simultaneously and are substantially equally distanced from the platform along a vertical axis when the housing is tilted. The electron microscope also has electron beam focusing assemblies for focusing the electron beams generated by the electron sources onto the crystalline sample to generate backscattered electrons. The electron microscope also has detectors for detecting the backscattered electrons.

Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

The invention relates to a device (20) for producing an electron beam (4), which comprises a hot cathode (1), a cathode electrode (2), an anode electrode (3) having an opening (6) through which an electron beam (4) produced by the device can pass, wherein during the operation of the device (20) a voltage for accelerating the electrons exiting from the hot cathode (1) is applied between the cathode electrode (2) and the anode electrode (3), and further comprising deflection means that can deflect the electron beam (4) that has passed through the opening of the anode electrode (3), wherein the deflection means comprise at least one deflection electrode (8, 12), which can reflect the electron beam (4) and/or which comprises a deflection surface (9) that is inclined towards the propagation direction of the electron beam (4).

The invention relates to a device (20) for producing an electron beam (4), which comprises a hot cathode (1), a cathode electrode (2), an anode electrode (3) having an opening (6) through which an electron beam (4) produced by the device can pass, wherein during the operation of the device (20) a voltage for accelerating the electrons exiting from the hot cathode (1) is applied between the cathode electrode (2) and the anode electrode (3), and further comprising deflection means that can deflect the electron beam (4) that has passed through the opening of the anode electrode (3), wherein the deflection means comprise at least one deflection electrode (8, 12), which can reflect the electron beam (4) and/or which comprises a deflection surface (9) that is inclined towards the propagation direction of the electron beam (4).

A plasma ion source includes: a gas introduction chamber, into which raw gas is introduced; a plasma generation chamber connected to the gas introduction chamber and made of a dielectric material; a coil wound along an outer circumference of the plasma generation chamber and to which high-frequency power is applied; an envelope surrounding the gas introduction chamber, the plasma generation chamber and the coil; and insulating liquid filled inside the gas introduction chamber, the plasma generation chamber and the envelope to immerse the coil and having an dielectric strength voltage relatively greater than that of the envelope and the same dielectric dissipation factor as the plasma generation chamber.

A plasma ion source includes: a gas introduction chamber, into which raw gas is introduced; a plasma generation chamber connected to the gas introduction chamber and made of a dielectric material; a coil wound along an outer circumference of the plasma generation chamber and to which high-frequency power is applied; an envelope surrounding the gas introduction chamber, the plasma generation chamber and the coil; and insulating liquid filled inside the gas introduction chamber, the plasma generation chamber and the envelope to immerse the coil and having an dielectric strength voltage relatively greater than that of the envelope and the same dielectric dissipation factor as the plasma generation chamber.

A high dose output, through transmission target X-ray tube and methods of use includes, in general an X-ray tube for accelerating electrons under a high voltage potential having an evacuated high voltage housing, a hemispherical shaped through transmission target anode disposed in said housing, a cathode structure to deflect the electrons toward the hemispherical anode disposed in said housing, a filament located in the geometric center of the anode hemisphere disposed in said housing, a power supply connected to said cathode to provide accelerating voltage to the electrons.

The present invention discloses an electrode material that eases electron injection and does not react with contact substances. The structure of the material includes a conductive substrate plane on the top of which an emissive material is coated. The emissive coating bonds strongly with the substrate plane. The emissive material is of low work function and high chemical stability.

The present invention discloses an electrode material that eases electron injection and does not react with contact substances. The structure of the material includes a conductive substrate plane on the top of which an emissive material is coated. The emissive coating bonds strongly with the substrate plane. The emissive material is of low work function and high chemical stability.