Provided is an ion beam system including a gas field ionization ion source which can obtain a high current sufficient for processing and stabilize an ion beam current. The ion beam system includes a gas field ionization ion source which includes: a vacuum vessel; an emitter tip holder disposed in the vacuum vessel; an emitter tip connected to the emitter tip holder; an extraction electrode opposed to the emitter tip; a gas supply portion for supplying a gas to the emitter tip; and a cold transfer member disposed in the vacuum vessel and transferring cold energy to the emitter tip holder. The cold transfer member has its surface covered with a heat insulating material in order to prevent the gas condensation.

An ion implantation system includes an ion implanter containing an ion source unit and a dopant source gas supply system. The system includes a dopant source gas storage tank inside a gas box container located remotely to the ion implanter and a dopant source gas supply pipe configured to supply a dopant source gas from the dopant source gas storage tank to the ion source unit. The dopant source gas supply pipe includes an inner pipe, an outer pipe enclosing the inner pipe, a first pipe adaptor coupled to first end of respective inner and outer pipes, and a second pipe adaptor coupled to seconds end of respective inner and outer pipes opposite the first end. The first pipe adaptor connects the inner pipe to the dopant source gas storage tank and the second pipe adaptor connects the inner pipe to the ion source unit.

An ion implantation system includes an ion implanter containing an ion source unit and a dopant source gas supply system. The system includes a dopant source gas storage tank inside a gas box container located remotely to the ion implanter and a dopant source gas supply pipe configured to supply a dopant source gas from the dopant source gas storage tank to the ion source unit. The dopant source gas supply pipe includes an inner pipe, an outer pipe enclosing the inner pipe, a first pipe adaptor coupled to first end of respective inner and outer pipes, and a second pipe adaptor coupled to seconds end of respective inner and outer pipes opposite the first end. The first pipe adaptor connects the inner pipe to the dopant source gas storage tank and the second pipe adaptor connects the inner pipe to the ion source unit.

A compact two-dimensional (2D) scanning magnet for scanning ion beams is provided. The compact 2D scanning magnet may include an outer double-helix coil and an inner double-helix coil that is disposed within the outer double-helix coil and is rotated about an axis relative to the outer double-helix coil. The outer double-helix coil may include a first outer coil configured to receive an input electrical current through the first outer coil in a first direction, and a second outer coil configured to receive the input electrical current through the second outer coil in a second direction. The inner double-helix coil may include a first inner coil configured to receive a second input electrical current through the first inner coil in the first direction, and a second inner coil configured to receive the second input electrical current through the second inner coil in the second direction.

A compact two-dimensional (2D) scanning magnet for scanning ion beams is provided. The compact 2D scanning magnet may include an outer double-helix coil and an inner double-helix coil that is disposed within the outer double-helix coil and is rotated about an axis relative to the outer double-helix coil. The outer double-helix coil may include a first outer coil configured to receive an input electrical current through the first outer coil in a first direction, and a second outer coil configured to receive the input electrical current through the second outer coil in a second direction. The inner double-helix coil may include a first inner coil configured to receive a second input electrical current through the first inner coil in the first direction, and a second inner coil configured to receive the second input electrical current through the second inner coil in the second direction.

An ion beam extraction apparatus (100), being configured for creating an ion beam (1), in particular adapted for a neutral beam injection apparatus of a fusion plasma plant, comprises an ion source device (10) being arranged for creating ions, and a grid device (20) comprising at least two grids (21, 22) being arranged adjacent to the ion source device (10) and having a mutual grid distance d along a beam axis z, wherein the grids (21, 22) are electrically insulated relative to each other, the grids (21, 22) are arranged for applying different electrical potentials for creating an ion extraction and acceleration field (3) along the beam axis z, and he ion source device (10) and the grid device (20) are arranged in an evacuable ion beam space (30) extending along the beam axis z, wherein at least one of the grids is a movable grid (21), which can be shifted along the beam axis z, and the grid device (20) is coupled with a grid drive device (40) having a drive motor (41), which is arranged for moving the movable grid (21) along the beam axis z and setting the grid distance d between the movable grid (21) and another one of the grids (21, 22). Furthermore, applications of the ion beam extraction apparatus and a method of creating an ion beam along a beam axis z are disclosed.

The invention relates to a liquid metal-ion beam system (1) or liquid metal electron beam system, including: a conductive emitter electrode (2), a conductive extractor electrode (3) opposite to the emitter electrode (2), a liquid metal reservoir (4) which is fluidically connected to the emitter electrode (2) for transporting liquid metal to the emitter electrode (2), a control unit (5) which is configured to apply a periodically varying operating voltage between emitter electrode (2) and extractor electrode (3).

An ion implantation system, ion source, and method are provided, where an ion source is configured to ionize an aluminum-based ion source material and to form an ion beam and a by-product including a non-conducting material. An etchant gas mixture has a predetermined concentration of fluorine and a noble gas that is in fluid communication with the ion source. The predetermined concentration of fluorine is associated with a predetermined health safety level, such as approximately a 20% maximum concentration of fluorine. The etchant gas mixture can have a co-gas with a concentration less than approximately 5% of argon. The aluminum-based ion source material can be a ceramic member, such as a repeller shaft, a shield, or other member within the ion source.

An ion implantation system, ion source, and method are provided, where an ion source is configured to ionize an aluminum-based ion source material and to form an ion beam and a by-product including a non-conducting material. An etchant gas mixture has a predetermined concentration of fluorine and a noble gas that is in fluid communication with the ion source. The predetermined concentration of fluorine is associated with a predetermined health safety level, such as approximately a 20% maximum concentration of fluorine. The etchant gas mixture can have a co-gas with a concentration less than approximately 5% of argon. The aluminum-based ion source material can be a ceramic member, such as a repeller shaft, a shield, or other member within the ion source.

An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a liquid that transitions into vapor phase at room temperature. An ion source receives and ionizes the gaseous aluminum-based ion source material to form an ion beam. A low-pressure gas bottle supplies the DMAC as a gas to an arc chamber of the ion source by a primary gas line. A separate, secondary gas line supplies a co-gas, such as a fluorine-containing molecule, to the ion source, where the co-gas and DMAC reduce an energetic carbon cross-contamination and/or increase doubly charged aluminum.