The present disclosure relates to an ion beam etching (IBE) system including a plasma chamber configured to provide plasma, a screen grid, an extraction grid, an accelerator grid, and a decelerator grid. The screen grid receives a screen grid voltage to extract ions from the plasma within the plasma chamber to form an ion beam through a hole. The extraction grid receives an extraction grid voltage, where a voltage difference between the screen grid voltage and the extraction grid voltage determines an ion current density of the ion beam. The accelerator grid receives an accelerator grid voltage. A voltage difference between the extraction grid voltage and the accelerator grid voltage determines an ion beam energy for the ion beam. The IBE system can further includes a deflector system having a first deflector plate and a second deflector plate around a hole to control the direction of the ion beam.

An ion source having an extraction plate with a variable thickness is disclosed. The extraction plate has a protrusion on its interior or exterior surface proximate the extraction aperture. The protrusion increases the thickness of the extraction aperture in certain regions. This increases the loss area in those regions, which serves as a sink for ions and electrons. In this way, the plasma density is decreased more significantly in the regions where the extraction aperture has a greater thickness. The shape of the protrusion may be modified to achieve the desired plasma uniformity. Thus, it may be possible to create an extracted ion beam having a more uniform ion density. In some tests, the uniformity of the beam current along the width direction was improved by between 20% and 50%.

An ion source having an extraction plate with a variable thickness is disclosed. The extraction plate has a protrusion on its interior or exterior surface proximate the extraction aperture. The protrusion increases the thickness of the extraction aperture in certain regions. This increases the loss area in those regions, which serves as a sink for ions and electrons. In this way, the plasma density is decreased more significantly in the regions where the extraction aperture has a greater thickness. The shape of the protrusion may be modified to achieve the desired plasma uniformity. Thus, it may be possible to create an extracted ion beam having a more uniform ion density. In some tests, the uniformity of the beam current along the width direction was improved by between 20% and 50%.

An ion source capable of extracting a ribbon ion beam with improved uniformity is disclosed. One of the walls of the ion source has a protrusion on its interior surface facing the chamber. The protrusion creates a loss area that serves as a sink for free electrons and ions. This causes a reduction in plasma density near the protrusion, and may improve the uniformity of the ribbon ion beam that is extracted from the ion source by modifying the beam current near the protrusion. The shape of the protrusion may be modified to achieve the desired uniformity. The protrusion may also be utilized with a cylindrical ion source. In certain embodiments, the protrusion is created by a plurality of mechanically adjustable protrusion elements.

An ion source capable of extracting a ribbon ion beam with improved uniformity is disclosed. One of the walls of the ion source has a protrusion on its interior surface facing the chamber. The protrusion creates a loss area that serves as a sink for free electrons and ions. This causes a reduction in plasma density near the protrusion, and may improve the uniformity of the ribbon ion beam that is extracted from the ion source by modifying the beam current near the protrusion. The shape of the protrusion may be modified to achieve the desired uniformity. The protrusion may also be utilized with a cylindrical ion source. In certain embodiments, the protrusion is created by a plurality of mechanically adjustable protrusion elements.

An ion source is provided. The ion source may include an ion source chamber, and a cathode disposed in the ion source chamber and configured to emit electrons to generate a plasma within the ion source chamber, the cathode comprising a refractory metal, wherein the refractory metal comprises a macrocrystalline structure.

An ion source is provided. The ion source may include an ion source chamber, and a cathode disposed in the ion source chamber and configured to emit electrons to generate a plasma within the ion source chamber, the cathode comprising a refractory metal, wherein the refractory metal comprises a macrocrystalline structure.

Apparatus include a plurality of electrode arrangements spaced apart from each other opposite an ion propagation axis and defining an ion transfer channel that extends along the ion propagation axis that tapers between an input end that is situated to receive ions and an output end that is situated to couple the received ions to an input end of an ion guide. Methods include positioning a plurality of electrode arrangements at oblique angles opposite an ion propagation axis so as to form a ion transfer channel that tapers between an input end and an output end, and coupling the output end of the ion transfer channel to an input end of an ion optical element so as to direct ions in the ion transfer channel into the ion optical element. Related systems are also disclosed.

Apparatus include a plurality of electrode arrangements spaced apart from each other opposite an ion propagation axis and defining an ion transfer channel that extends along the ion propagation axis that tapers between an input end that is situated to receive ions and an output end that is situated to couple the received ions to an input end of an ion guide. Methods include positioning a plurality of electrode arrangements at oblique angles opposite an ion propagation axis so as to form a ion transfer channel that tapers between an input end and an output end, and coupling the output end of the ion transfer channel to an input end of an ion optical element so as to direct ions in the ion transfer channel into the ion optical element. Related systems are also disclosed.

An apparatus may include global control module, the global control module including a digital master clock generator and a master waveform generator. The apparatus may also include a plurality of resonator control modules, coupled to the global control module. A given resonator control module of the plurality of resonator control modules may include a synchronization module, having a first input coupled to receive a resonator output voltage pickup signal from a local resonator, a second input coupled to receive a digital master clock signal from the digital master clock generator, and a first output coupled to send a delay signal to the master waveform generator.