Systems and methods of observing a sample using an electron beam apparatus are disclosed. The electron beam apparatus comprises an electron source configured to generate a primary electron beam along a primary optical axis, and a first electron detector having a first detection layer substantially parallel to the primary optical axis and configured to detect a first portion of a plurality of signal electrons generated from a probe spot on a sample. The method may comprise generating a plurality of signal electrons and detecting the signal electrons using the first electron detector substantially parallel to the primary optical axis of the primary electron beam. A method of configuring an electrostatic element or a magnetic element to detect backscattered electrons may include disposing an electron detector on an inner surface of the electrostatic or magnetic element and depositing a conducting layer on the inner surface of the electron detector.

Systems and methods of observing a sample using an electron beam apparatus are disclosed. The electron beam apparatus comprises an electron source configured to generate a primary electron beam along a primary optical axis, and a first electron detector having a first detection layer substantially parallel to the primary optical axis and configured to detect a first portion of a plurality of signal electrons generated from a probe spot on a sample. The method may comprise generating a plurality of signal electrons and detecting the signal electrons using the first electron detector substantially parallel to the primary optical axis of the primary electron beam. A method of configuring an electrostatic element or a magnetic element to detect backscattered electrons may include disposing an electron detector on an inner surface of the electrostatic or magnetic element and depositing a conducting layer on the inner surface of the electron detector.

A method of determining aberrations of a charged particle beam (11) focused by a focusing lens (120) toward a sample (10) in a charged particle beam system is described. The method includes: (a) taking one or more images of the sample at one or more defocus settings to provide one or more taken images (h.sub.1...N); (b) simulating one or more images of the sample taken at the one or more defocus settings based on a set of beam aberration coefficients (.sup.iC) and a focus image of the sample to provide one or more simulated images; (c) comparing the one or more taken images and the one or more simulated images for determining a magnitude (Ri) of a difference therebetween; and (d) varying the set of beam aberration coefficients (.sup.iC) to provide an updated set of beam aberration coefficients (.sup.i+1C) and repeating (b) and (c) using the updated set of beam aberration coefficients (.sup.i+1C) in an iterative process for minimizing said magnitude (R.sub.i). Alternatively, in (b), one or more beam cross sections may be simulated, and, in (c) the simulated beam cross sections may be compared with one or more retrieved beam cross sections retrieved from the one or more taken images for determining a magnitude (R.sub.i) of a difference therebetween. Further, a charged particle beam system for imaging and/or inspecting a sample that is configured for any of such methods is provided.

A method of operating a semiconductor apparatus includes forming a first electron beam passing through a first shaping aperture; modifying an energy distribution of the first electron beam by a second shaping aperture, such that the first electron beam has a main region and an edge region having a greater energy than the main region; and exposing a workpiece to the main region and the edge region of the first electron beam to create a pattern.

An ion beam lens and methods for combining ion beams are disclosed. Embodiments combine hyperthermal ion beams and can include layered three-dimensional electrodes with passageways through the electrodes, each electrode having a specified DC voltage and each passageway configured for passing an ion beam to an exit, the velocity vectors of the beams being primarily oriented along the lens' central axis upon exiting the passageways. Embodiments include nested electrode plates with curved ion beam passageways. In some embodiments each electrode plate has a charge different from the electrode plates adjacent to it, and in some embodiments every other electrode plate is charged with a first DC voltage and the remaining plates are charged with a second DC voltage different from the first DC voltage.

An ion beam lens and methods for combining ion beams are disclosed. Embodiments combine hyperthermal ion beams and can include layered three-dimensional electrodes with passageways through the electrodes, each electrode having a specified DC voltage and each passageway configured for passing an ion beam to an exit, the velocity vectors of the beams being primarily oriented along the lens' central axis upon exiting the passageways. Embodiments include nested electrode plates with curved ion beam passageways. In some embodiments each electrode plate has a charge different from the electrode plates adjacent to it, and in some embodiments every other electrode plate is charged with a first DC voltage and the remaining plates are charged with a second DC voltage different from the first DC voltage.

The present invention is to generate a spatially phase modulated electron wave. A laser radiating apparatus, a spatial light phase modulator, and a photocathode are provided. The photocathode has a semiconductor film having an NEA film formed on a surface thereof, and a thickness of the semiconductor film is smaller than a value obtained by multiplying a coherent relaxation time of electrons in the semiconductor film by a moving speed of the electrons in the semiconductor film. According to the configuration, a spatial distribution of phase and a spatial distribution of intensity of spatial phase modulated light are transferred to an electron wave, and the electron wave emitted from an NEA film is modulated into the spatial distribution of phase and the spatial distribution of intensity of the light. Since the spatial distribution of phase of the light can be modulated as intended by a spatial phase modulation technique for light, it is possible to generate an electron wave having a spatial distribution of phase modulated as intended.

The present invention is to generate a spatially phase modulated electron wave. A laser radiating apparatus, a spatial light phase modulator, and a photocathode are provided. The photocathode has a semiconductor film having an NEA film formed on a surface thereof, and a thickness of the semiconductor film is smaller than a value obtained by multiplying a coherent relaxation time of electrons in the semiconductor film by a moving speed of the electrons in the semiconductor film. According to the configuration, a spatial distribution of phase and a spatial distribution of intensity of spatial phase modulated light are transferred to an electron wave, and the electron wave emitted from an NEA film is modulated into the spatial distribution of phase and the spatial distribution of intensity of the light. Since the spatial distribution of phase of the light can be modulated as intended by a spatial phase modulation technique for light, it is possible to generate an electron wave having a spatial distribution of phase modulated as intended.

Electron-optical devices and associated methods are disclosed. In one arrangement, an electron-optical device projects a multi-beam of sub-beams of charged particles to a sample. A plurality of plates are provided in which are defined respective aperture arrays. The plates comprise an objective lens array configured to project the sub-beams towards the sample. The aperture arrays defined in at least two of the plates each have a geometrical characteristic configured to apply a perturbation to a corresponding target property of the sub-beams. A controller controls potentials applied to the plates having the geometrical characteristics such that the applied perturbations together substantially compensate for a variation in the target property over a range of a parameter of the device.

Electron-optical devices and associated methods are disclosed. In one arrangement, an electron-optical device projects a multi-beam of sub-beams of charged particles to a sample. A plurality of plates are provided in which are defined respective aperture arrays. The plates comprise an objective lens array configured to project the sub-beams towards the sample. The aperture arrays defined in at least two of the plates each have a geometrical characteristic configured to apply a perturbation to a corresponding target property of the sub-beams. A controller controls potentials applied to the plates having the geometrical characteristics such that the applied perturbations together substantially compensate for a variation in the target property over a range of a parameter of the device.