In a writing process in a charged-particle multi-beam apparatus, a desired pattern is written onto a target wherein said desired pattern is provided as input pattern data (INPDAT) in a vector format and processed through a pattern data processing flow. A data preprocessing system receives the input pattern data (INPDAT) and preprocesses the input pattern data independently of the writing process, preferably in advance to it, using writing parameter data provided to the data preprocessing system, and writes the intermediate pattern data (IMDAT) thus obtained to a data storage. When a writing process is carried out using the apparatus, its writing control system reads the intermediate pattern data from the data storage, converts them into pattern streaming data (SBUF), and streams the pattern streaming data to the apparatus for writing the pattern to the target.

In a charged particle beam writing method according to one embodiment, a deflector is caused to deflect a charged particle beam and a pattern is written by irradiating a substrate with the charged particle beam. The charged particle beam writing method includes calculating a charge amount distribution based on a charge amount of a beam irradiation region on the substrate immediately after irradiation with the charged particle beam and a diffusion coefficient for electric charge of the substrate, calculating a position shift distribution of the charged particle beam on the substrate based on the charge amount distribution, and correcting an irradiation position of the charged particle beam based on the position shift distribution.

In a charged particle beam writing method according to one embodiment, a deflector is caused to deflect a charged particle beam and a pattern is written by irradiating a substrate with the charged particle beam. The charged particle beam writing method includes calculating a charge amount distribution based on a charge amount of a beam irradiation region on the substrate immediately after irradiation with the charged particle beam and a diffusion coefficient for electric charge of the substrate, calculating a position shift distribution of the charged particle beam on the substrate based on the charge amount distribution, and correcting an irradiation position of the charged particle beam based on the position shift distribution.

A particle beam apparatus is used for imaging, processing and/or analyzing an object. A computer program product may be used to facilitate imaging, processing and/or analyzing the object. A magnification may be chosen from a first magnification range of the particle beam apparatus by driving a first amplifier unit and a second amplifier unit. If it is established that there are prerequisites which would actually result in the particle beam apparatus being switched to a different magnification from a second magnification range, the switching is avoided by feeding an analog amplifier signal from an amplifier unit to a scanning unit of the particle beam apparatus, guiding the particle beam over the object using the scanning unit, and imaging, processing and/or analyzing the object with the particle beam.

Provided is an electron beam irradiation apparatus including: an aligner configured to perform an alignment of an electron beam by deflecting the electron beam; a deflector having a plurality of electrodes and configured to deflect the electron beam after passing through the aligner; and an adjuster configured to adjust deflection caused by the aligner, wherein the adjuster is configured to perform, on each of the plurality of electrodes, detecting an image of the electron beam by applying a test voltage to one of the plurality of electrodes and applying a reference voltage to the other electrodes, determine a position shift of the electron beam based on each position of the image of the electron beam corresponding to each electrode, and adjust deflection of the aligner so as to cancel the position shift of the electron beam.

An object of the invention is to provide a grid assembly which is easy to assemble and is high in assembly reproducibility, and an ion beam etching apparatus including it. A grid assembly is constructed of three grids each in the shape of a circular plate, which are stacked one on top of another. The grid assembly includes three fixing holes for fixing the three grids, and three positioning holes for positioning the three grids. In assembly, the three grids are stacked one on top of another on a first ring so that positioning pins provided on the first ring are inserted into the positioning holes. Then, a second ring is stacked on top of the three grids, and bolts are inserted into the fixing holes. Thus, positioning is performed by using the fixed positioning pins and thereafter the fixing can be performed, which facilitates the assembly.

An object of the invention is to provide a grid assembly which is easy to assemble and is high in assembly reproducibility, and an ion beam etching apparatus including it. A grid assembly is constructed of three grids each in the shape of a circular plate, which are stacked one on top of another. The grid assembly includes three fixing holes for fixing the three grids, and three positioning holes for positioning the three grids. In assembly, the three grids are stacked one on top of another on a first ring so that positioning pins provided on the first ring are inserted into the positioning holes. Then, a second ring is stacked on top of the three grids, and bolts are inserted into the fixing holes. Thus, positioning is performed by using the fixed positioning pins and thereafter the fixing can be performed, which facilitates the assembly.

A multi-beam inspection apparatus supporting a plurality of operation modes is disclosed. The charged particle beam apparatus for inspecting a sample supporting a plurality of operation modes comprises a charged particle beam source configured to emit a charged particle beam along a primary optical axis, a movable aperture plate, movable between a first position and a second position, and a controller having circuitry and configured to change the configuration of the apparatus to switch between a first mode and a second mode. In the first mode, the movable aperture plate is positioned in the first position and is configured to allow a first charged particle beamlet derived from the charged particle beam to pass through. In the second mode, the movable aperture plate is positioned in the second position and is configured to allow the first charged particle beamlet and a second charged particle beamlet to pass through.

A multi-beam inspection apparatus supporting a plurality of operation modes is disclosed. The charged particle beam apparatus for inspecting a sample supporting a plurality of operation modes comprises a charged particle beam source configured to emit a charged particle beam along a primary optical axis, a movable aperture plate, movable between a first position and a second position, and a controller having circuitry and configured to change the configuration of the apparatus to switch between a first mode and a second mode. In the first mode, the movable aperture plate is positioned in the first position and is configured to allow a first charged particle beamlet derived from the charged particle beam to pass through. In the second mode, the movable aperture plate is positioned in the second position and is configured to allow the first charged particle beamlet and a second charged particle beamlet to pass through.

An ion gun includes a confinement vessel defining a chamber therein; a plasma source configured to provide ions in the chamber; and at least one acceleration and focusing electrode disposed within the chamber and positioned to receive ions from the plasma source, and to accelerate and focus the ions received to be delivered to an underlying surface. The at least one acceleration and focusing electrode is structured to provide an aperture therethrough to provide optical access to a high numerical aperture optical device.