A white light illumination source can illuminate a region of a substrate to be plasma etched with an incident light beam. A camera takes successive images of the region being illuminated during a plasma etch process. Image processing techniques can be applied to the images so as to identify a location of at least one feature on the substrate and to measure a reflectivity signal at the location. The plasma etch process can be modified in response to the measured reflectivity signal at the location.

Prior to execution of primary correction, a first centering process, an in-advance correction of a particular aberration, and a second centering process are executed stepwise. In the first centering process and the second centering process, a ronchigram center is identified based on a ronchigram variation image, and is matched with an imaging center. In the in-advance correction and the post correction of the particular aberration, a particular aberration value is estimated based on a ronchigram, and the particular aberration is corrected based on the particular aberration value.

There is provided a system and method of measuring a lateral recess in a semiconductor specimen, comprising: obtaining a first image acquired by collecting SEs emitted from the surface of the specimen, and a second image acquired by collecting BSEs scattered from an interior region of the specimen between the surface and a target second layer, the specimen scanned using an electron beam with a landing energy selected to penetrate to a depth corresponding to the target second layer; generating a first GL waveform based on the first image, and a second GL waveform based on the second image; estimating a first width of the first layers based on the first GL waveform, and a second width with respect to at least the target second layer based on the second GL; and measuring a lateral recess based on the first width and the second width.

A technique that enables automatic focus adjustment even for a sample having regions with different heights is proposed. A charged particle beam device according to the disclosure includes: a sample holder configured to hold a sample; a sample stage configured to move the sample; a charged particle gun and a charged particle beam column configured to irradiate the sample with a charged particle beam; an objective lens configured to perform focus adjustment by changing an intensity of a focusing effect on the charged particle beam; a detector configured to detect electrons from the sample and output a signal forming an electron image; an optical imaging device configured to capture an optical image of the sample; and a control device configured to calculate height information of the sample based on the optical image obtained by imaging the sample by the optical imaging device, and automatically set a focus adjustment value of an observation site based on the height information (see FIG. 5).

Provided is a sample image observation device including an SEM and a control system configured to control the SEM. An observation region of a sample is divided into a plurality of sections, and restoration processing is performed on an image which is acquired by irradiating each section with a sparse electron beam, based on scanning characteristics in the section. A reduction in quality of a restored image due to a beam irradiation position deviation caused by a scanning response is prevented and restoration with high accuracy and high throughput under a condition for preventing sample damage is possible.

A method can be used for sensing and processing image data for an object to be imaged. The object is scanned incompletely by virtue of regions (eB) of the object being sensed, where the sensed image regions (eB) alternate with non-sensed image regions (neB) of the object. Image data (rBD) of the non-sensed image regions (neB) are reconstructed on the basis of the sensed image data (eBD) of the sensed image regions (eB). A noise signal (N) of the sensed image data (eBD) of the sensed regions (eB) is ascertained and transferred to the reconstructed image data (rBD) of the non-sensed regions (neB), so that a user obtains a homogeneous visual impression in relation to the noise arising in the overall image data of the object visualized in a resultant overall image (rGB.sub.Inv).

Provided is an electron microscope for generating a montage image by acquiring images of a plurality of regions in a montage image capturing region set on a specimen, and by connecting the acquired images. The electron microscope includes a specimen surface height calculating unit that calculates a distribution of specimen surface heights in the montage image capturing region by performing curved surface approximation based on the specimen surface heights determined by performing focus adjustment at a plurality of points set in a region including the montage image capturing region, and an image acquiring unit that acquires the images of the plurality of regions based on the calculated distribution of the specimen surface heights.

A method for electron microscopy comprises: adjusting at least one of an electron beam and an image beam in such a way that off-axial aberrations inflicted on at least one of the electron beam and the image beam are minimized, the adjusting performed by using a beam adjusting component to obtain at least one modified image beam, wherein the adjusting comprises applying both shifting and tilting to at least one of the electron beam and the image beam and wherein the amount of tilting of at least one of the electron beam and the image beam depends on the amount of shifting of at least one of the electron beam and the image beam respectively and wherein the amount of tilting is computed based on at least one of coma and astigmatism introduced as a consequence of the shift.

There is provided an ion implanter including a beamline unit that transports an ion beam, an implantation processing chamber in which an implantation process of irradiating a wafer with an ion beam is performed, an illumination device that performs irradiation with illumination light in a direction intersecting with a transport direction of the ion beam in at least one of the beamline unit and the implantation processing chamber, an imaging device that generates a captured image captured by imaging a space through which the illumination light passes, and a control device that detects a particle which scatters the illumination light, based on the captured image.

A state detection device includes at least one chuck pin for holding a substrate, a photographing unit configured to photograph the chuck pin, and set at least one image to be obtained as a target image, a matching coordinate calculation unit configured to perform matching processing between the target image and a reference image which is at least one image showing the chuck pin, and calculate matching coordinates, which are coordinates indicating a position of the reference image in the target image when a matching score between the reference image and the target image is the highest, and a detection unit configured to detect an open/closed state of the chuck pin based on the matching coordinates. Therefore, the open/closed state of the chuck pin can be detected while detection accuracy is suppressed from lowering.