A charged-particle-beam microscope for imaging a sample, the microscope having a stage to hold a sample and an automated sample feeder to repeatedly and automatically exchange the sample from among a plurality of samples. A charged-particle-beam column is provided to direct a charged-particle-beam onto the sample, the charged-particle-beam column. The column includes a charged-particle-beam source to generate an electron beam and charged-particle-beam optics to converge the charged-particle beam onto the sample. A detector is provided to detect charged particles emanating from the sample to generate image data. A controller executes an artificial intelligence algorithm to analyze the image data.

The present disclosure relates to dual beam device and three-dimensional circuit pattern inspection techniques by cross sectioning of inspection volumes with large depth extension exceeding 1 μm below the surface of a semiconductor wafer, as well as methods, computer program products and apparatuses for generating 3D volume image data of a deep inspection volume inside a wafer without removal of a sample from the wafer. The disclosure further relates to 3D volume image generation and cross section image alignment methods utilizing a dual beam device for three-dimensional circuit pattern inspection.

The present disclosure relates to the determination of a pattern height of a pattern, which has been produced with extreme ultraviolet (EUV) lithography in a resist film. The determination is performed by using an electron beam (e-beam) system, in particular, by using a scanning electron microscope (SEM). In this respect, the disclosure provides a device for determining the pattern height, wherein the device comprising a processor. The processor is configured to obtain a SEM image of the pattern from an SEM. Further, the processor is configured to determine a contrast value related to the pattern based on the obtained SEM image. Subsequently, the processor is configured to determine the pattern height based on calibration data and the determined contrast value.

The enclosed disclosure relates to a method and apparatus for depositing functionalized nanoparticles within a semiconductor structure in order to create a nano-layer capable of enhancing imaging and contrast, The semiconductor structure can include any type of VNAND structure or 3D structure, The nanoparticles are formed in high-aspect ratio trenches of the structure and form a nano-layer. The functionalized nanoparticles comprise synthesized nanoparticles as well as organic molecules. The organic molecules are chosen to selectively bind to certain nanoparticles and surface materials.

A charged particle beam apparatus acquires a scanned image by scanning a specimen with a charged particle beam, and detecting charged particles emitted from the specimen. The apparatus includes a charged particle beam source that emits the charged particle beam; an irradiation optical system that scans the specimen with the charged particle beam; a plurality of detection units that detects the charged particles emitted from the specimen; and an image processing unit that reconstructs a profile of a specimen surface of the specimen, based on a plurality of detection signals outputted from the plurality of detection units. The image processing unit: determines an inclination angle of the specimen surface, based on the plurality of detection signals; processing to determine a height of the specimen surface, based on the scanned image; and reconstructs the profile of the specimen surface, based on the inclination angle and the height.

An electron beam is irradiated on a specimen in a state where a negative voltage is applied to the specimen. The specimen is rotated to establish an optimum orientation of a specimen surface shape relative to an orientation of a detector having two detection surfaces disposed at rotational symmetric positions with respect to an optical axis of the electron beam taken as an axis of rotation, and an image is generated based on a quantity of a signal from reflected electrons detected by the detector.

A specimen machining device for machining a specimen by irradiating the specimen with an ion beam includes an ion source for irradiating the specimen with the ion beam, a specimen stage for holding the specimen, a camera for photographing the specimen, an information provision unit for providing information indicating an expected machining completion time, and a storage unit for storing past machining information. The information provision unit performs processing for calculating the expected machining completion time based on the past machining information, processing for acquiring an image photographed by the camera, processing for calculating a machining speed based on the acquired image, and processing for updating the expected machining completion time based on the machining speed.

A specimen machining device for machining a specimen by irradiating the specimen with an ion beam includes an ion source for irradiating the specimen with the ion beam, a shielding member disposed on the specimen to block the ion beam, a specimen stage for holding the specimen, a camera for photographing the specimen, a coaxial illumination device for irradiating the specimen with illumination light along an optical axis of the camera, and a processing unit for determining whether to terminate the machining based on an image photographed by the camera. The processing unit performs processing for acquiring information indicating a target machined width, processing for acquiring the image, processing for measuring a machined width on the acquired image, and processing for terminating the machining when the measured machined width equals or exceeds the target machined width.

The invention relates to a method of examining a sample using a charged particle microscope, comprising the steps of providing a charged particle beam, as well as a sample, and scanning said charged particle beam over said sample. A first detector is used for detecting emissions of a first type from the sample in response to the beam scanned over the sample. Using spectral information of detected emissions of the first type, a plurality of mutually different phases are assigned to said sample. An image representation of said sample is provided, wherein said image representation contains different color hues. The color hues are selected from a pre-selected range of consecutive color hues in such a way that the selected color hues comprise mutually corresponding intervals within said pre-selected range of consecutive color hues.

In one embodiment, a method includes generating a model trained to predict a low-probability stochastic defect, using the model to predict the low-probability stochastic defect, determining a process window based on the low-probability stochastic defect, and controlling, based on the process window, a lithography tool to manufacture a device.