H01J37/222

Electron beam device and image acquisition method
11664190 · 2023-05-30 · ·

According to one embodiment, an electron beam device includes a support which supports the sample and an electrode disposed below the sample on the support The electrode is for applying a voltage to the sample and includes a plurality of columnar electrodes that can be independently controlled to apply different voltages to portions of the sample. A controller for generating correction data for correcting the distribution of an electric field generated across the area of the sample. The correction data is generated based on structure information indicating a structure of the sample. The controller controls the plurality of columnar electrodes to apply local voltages set based on the correction data.

IMAGE ENHANCEMENT BASED ON CHARGE ACCUMULATION REDUCTION IN CHARGED-PARTICLE BEAM INSPECTION
20230162944 · 2023-05-25 · ·

An improved method and apparatus for enhancing an inspection image in a charged-particle beam inspection system. An improved method for enhancing an inspection image comprises acquiring a plurality of test images of a sample that are obtained at different landing energies, determining distortion levels for the plurality of test images, determining a landing energy level that enables the sample to be in a neutral charge condition during inspection based on the distortion levels, and acquiring an inspection image based on the determined landing energy level.

CHARGED PARTICLE BEAM DEVICE

The present invention provides a charged particle beam device with which optimal parameters for the device can be effectively derived in a short time period. This charged particle beam device comprises: an electron gun (1) that irradiates a sample (10) with an electron beam (2); an image processing unit (901) that acquires an image of the sample (10) from a signal (12) generated by the sample (10) due to the electron beam (2); a database (604) that holds correspondence between a first parameter that is an optical condition, a second parameter that is a value pertaining to device performance, and a third parameter that is information pertaining to the device configuration, and stores a plurality of analysis values and measurement values; and a learning machine (605) that searches the database (604) and derives a first parameter that satisfies a target value of the second parameter.

METHOD OF DETERMINING THE BEAM CONVERGENCE OF A FOCUSED CHARGED PARTICLE BEAM, AND CHARGED PARTICLE BEAM SYSTEM

A method of determining a beam convergence of a charged particle beam (11) focused by a focusing lens (120) toward a sample (10) in a charged particle beam system (100) is provided. The method includes (a) taking one or more images of the sample when the sample is arranged at one or more defocus distances from a respective beam focus of the charged particle beam; (b) retrieving one or more beam cross sections from the one or more images; (c) determining one or more beam widths from the one or more beam cross sections; and (d) calculating at least one beam convergence value based on the one or more beam widths and the one or more defocus distances. Further, a charged particle beam system for imaging and/or inspecting a sample that is configured for any of the methods described herein is provided.

METHODS OF DETERMINING ABERRATIONS OF A CHARGED PARTICLE BEAM, AND CHARGED PARTICLE BEAM SYSTEM

A method of determining aberrations of a charged particle beam (11) focused by a focusing lens (120) toward a sample (10) in a charged particle beam system is described. The method includes: (a) taking one or more images of the sample at one or more defocus settings to provide one or more taken images (h.sub.1...N); (b) simulating one or more images of the sample taken at the one or more defocus settings based on a set of beam aberration coefficients (.sup.iC) and a focus image of the sample to provide one or more simulated images; (c) comparing the one or more taken images and the one or more simulated images for determining a magnitude (Ri) of a difference therebetween; and (d) varying the set of beam aberration coefficients (.sup.iC) to provide an updated set of beam aberration coefficients (.sup.i+1C) and repeating (b) and (c) using the updated set of beam aberration coefficients (.sup.i+1C) in an iterative process for minimizing said magnitude (R.sub.i). Alternatively, in (b), one or more beam cross sections may be simulated, and, in (c) the simulated beam cross sections may be compared with one or more retrieved beam cross sections retrieved from the one or more taken images for determining a magnitude (R.sub.i) of a difference therebetween. Further, a charged particle beam system for imaging and/or inspecting a sample that is configured for any of such methods is provided.

ENERGY BAND-PASS FILTERING FOR IMPROVED HIGH LANDING ENERGY BACKSCATTERED CHARGED PARTICLE IMAGE RESOLUTION

Some embodiments are related to a method of or apparatus for forming an image of a buried structure that includes: emitting primary charged particles from a source; receiving a plurality of secondary charged particles from a sample; and forming an image based on received secondary charged particles that have an energy within a first range.

Stress measurement method, stress measurement device, and stress measurement system

In a stress measurement method, an object to be measured is vibrated at a plurality of oscillation frequencies, and a temperature amplitude of the object to be measured is measured by using a temperature sensor. Parameters of a one-dimensional heat conduction equation described below are identified by performing curve-fitting, on the basis of the one-dimensional heat conduction equation, on a measurement value of the temperature amplitude with respect to frequency characteristics of a temperature change component and a phase component based on a thermoelastic effect. The frequency characteristics are obtained at the plurality of oscillation frequencies. The one-dimensional heat conduction equation indicates a theoretical solution of a temperature amplitude on a surface of a coating film based on heat conduction and the thermoelastic effect of each of a substrate and the coating film. Then, a stress of the object to be measured is obtained based on the identified parameters.

System and method for scanning a sample using multi-beam inspection apparatus

An improved system and method for inspection of a sample using a particle beam inspection apparatus, and more particularly, to systems and methods of scanning a sample with a plurality of charged particle beams. An improved method of scanning an area of a sample using N charged particle beams, wherein Nis an integer greater than or equal to two, and wherein the area of the sample comprises a plurality of scan sections of N consecutive scan lines, includes moving the sample in a first direction. The method also includes scanning, with a first charged particle beam of the N charged particle beams, first scan lines of at least some scan sections of the plurality of scan sections moving towards a probe spot of the first charged particle beam. The method further includes scanning, with a second charged particle beam of the N charged particle beams, second scan lines of at least some scan sections of the plurality of scan sections moving towards a probe spot of the second charged particle beam.

Sample Image Display System and Charged Particle Beam Apparatus
20220336184 · 2022-10-20 ·

A sample image display system 150 displays, on a screen, a plurality of images 203 of a sample S and a symbol 205 corresponding to each of the images. The sample image display system 150 displays each symbol 205 in a different mode according to information related to the corresponding image 203.

MULTIPLE ELECTRON BEAM IMAGE ACQUISITION METHOD, MULTIPLE ELECTRON BEAM IMAGE ACQUISITION APPARATUS, AND MULTIPLE ELECTRON BEAM INSPECTION APPARATUS
20220336183 · 2022-10-20 · ·

A multiple electron beam image acquisition method includes performing scanning with a representative secondary electron beam emitted, based on temporary secondary electron beam deflection conditions, for each of plural positions in a primary electron beam deflection range of a representative primary electron beam, acquiring plural coordinates corresponding to the plural positions, based on detected images of the representative secondary electron beam, each detected at any one of the plural positions in the primary electron beam deflection range of the representative primary electron beam, and calculating, using the plural coordinates acquired, secondary electron beam deflection conditions to cancel movement of the representative secondary electron beam due to movement of the representative primary electron beam in the primary electron beam deflection range of the representative primary electron beam and to fix the irradiation position of the representative secondary electron beam to the predetermined detection element.