An objective lens for forming an image of an object. The objective lens includes, sequentially from an image side to an object side, a first lens group having negative refractive power, and a second lens group having positive refractive power.

Charged particle beam apparatus includes: a charged particle optical system to irradiate a sample with a pulsed charged particle beam; an optical system to irradiate the sample with light; a detector configured to detect a secondary charged particle emitted by irradiating the sample with the pulsed charged particle beam; a control unit configured to control the charged particle optical system to irradiate the sample with the pulsed charged particle beam under a predetermined electron beam pulse condition, and control the optical system to irradiate the sample with the light under a predetermined light irradiation condition; and a computation device configured to set the predetermined light irradiation condition based on a difference between a secondary charged particle signal amount detected under a first electron beam pulse condition and a secondary charged particle signal amount detected under a second electron beam pulse condition different from the first electron beam pulse condition.

An object of the invention is to provide a charged particle beam apparatus capable of acquiring an observation image having a high contrast in a sample whose light absorption characteristic depends on a light wavelength. The charged particle beam apparatus according to the invention irradiates the sample with light, generates an observation image of the sample, changes an irradiation intensity per unit time of the light, and then generates a plurality of the observation images having different contrasts (see FIG. 4).

An electron beam device obtains contrast reflecting an electronic state of a sample with high sensitivity. The device includes an electron optical system which emits an electron beam to a sample and detects electrons emitted from the sample; a light pulse emission system that emits a light pulse to the sample; a synchronization processing unit that samples the emitted electrons; an image signal processing unit which forms an image by a detection signal output based upon the emitted electrons detected by the electron optical system; and a device control unit for setting a control condition of the electron optical system. The device control unit sets a sampling frequency for detection sampling of the emitted electrons to be greater than a value obtained by dividing the number of emissions of the light pulse per unit pixel time by the unit pixel time.

Provided herein are systems and methods for spatially resolved optical metrology of an ion beam. In some embodiments, a system includes a chamber containing a plasma/ion source operable to deliver an ion beam to a wafer, and an optical collection module operable with the chamber, wherein the optical collection module includes an optical device for measuring a light signal from a volume of the ion beam. The system may further include a detection module operable with the optical collection module, the detection module comprising a detector for receiving the measured light signal and outputting an electric signal corresponding to the measured light signal, thus corresponding to the property of the sampled plasma volume.

Provided is a charged particle beam device using a detector that detects electromagnetic waves, in which a circumstance in a sample chamber can be checked, and a sample is observed with the detector at the same time. The charged particle beam device that observes a sample by using a charged particle beam, including: a component used for observing the sample; a detector that detects electromagnetic waves; a chamber scope that photographs a picture while irradiating the sample with the electromagnetic waves; and a control unit that controls the detector, the component, and an operation of the chamber scope, in which the control unit can be selectively operated in any one of a pre-photographing mode and an observation mode, the control unit causes the chamber scope to photograph the picture, in a state in which an operation of observing the sample by the detector is not performed in the pre-photographing mode, and the control unit, in the observation mode, does not cause the chamber scope to apply the electromagnetic waves, generates a guide image showing a positional relationship between the sample and the component based on the picture, and outputs the guide image.

In an analyzer, an image processing unit performs processing of: dividing a measurement image into a plurality of partial measurement images, and dividing a reference image into a plurality of partial reference images; calculating a positional deviation amount of each of the partial measurement images relative to a corresponding partial reference image among the partial reference images; determining whether the positional deviation amount is a threshold or less; and correcting positional deviation of the measurement image based on the positional deviation amounts of the plurality of partial measurement images when the image processing unit has determined that the positional deviation amount is not the threshold or less.

According to one embodiment, an inspection device includes: a lens barrel that irradiates a substrate having a first main surface on which a pattern is formed with a charged particle; a terminal that comes into contact with the substrate at a first site on a second main surface of the substrate or on a side surface of the substrate and applies a predetermined potential to the substrate; and at least one light source that irradiates a predetermined area of the substrate including the first site with light.

A method, a non-transitory computer readable medium and a system for focusing an electron beam. The method may include focusing the electron beam on at least one evaluated area of a wafer, based on a height parameter of each one of the at least one evaluated area. The wafer includes a transparent substrate. The height parameter of each one of the at least one evaluated area is determined based on detection signals generated as a result of an illumination of one or more height-measured areas of the wafer with a beam of photons. The illumination occurs while one or more supported areas of the wafer contact one or more supporting elements of a chuck, and while each one of the one or more height-measured areas are spaced apart from the chuck by a distance that exceeds a depth of field of the optics related to the beam of photons.

A purpose of the invention is to control a charged portion according to a structure of a transistor formed on a semiconductor material, so as to measure on/off characteristics of the transistor by irradiation with a charged particle beam and irradiation with light. A charged particle beam device according to the invention turns on a transistor formed on a semiconductor material by irradiating a gate of the transistor with a charged particle beam, and initializes charges of the transistor by irradiating the transistor with light, thereby controlling a conductive state of the transistor (see FIG. 4).