Situating samples on an optical axis of a charged particle microscope can be performed based a 3D map of the samples. The 3D map is produced with back-side illumination of the samples and telecentric imaging to produce profile images. The profile images are a combined to form the 3D map. Using the 3D map, the processor is coupled to a sample stage to situate a selected sample or sample portion for imaging in the charged particle microscope. In some examples, the processor is responsive to selection of a sample using a graphical interface so that the sample stage is controlled to safely situate the selected sample without further operator intervention.

A charged particle beam device includes an input and output device that receives, as inputs, a charged particle beam condition, a light condition, and electronic device circuit information, a charged particle beam control system that controls a charged particle beam applied to a sample based on the electron beam condition, a light control system that controls light applied to the sample based on the light condition, a detector that detects second electrons emitted from the sample by the application of the charged particle beam and the light and outputs a detection signal, and a calculator that generates a calculation netlist based on the electronic device circuit information, generates a light irradiation netlist based on the calculation netlist and the light condition, estimates a first irradiation result when the charged particle beam and the light are applied to the sample based on the light irradiation netlist and the charged particle beam condition, and compares the first irradiation result with a second irradiation result when the charged particle beam and the light are actually applied to the sample based on the electron beam condition.

An optical system used in a charged particle beam inspection system. The optical system includes one or more optical lenses, and a compensation lens configured to compensate a drift of a focal length of a combination of the one or more optical lenses from a first medium to a second medium.

A charged particle inspection system may include a shielding plate having an aperture or more than one aperture, for example, to permit additional inspection by an additional instrument requiring a line of sight to the area of interest. A field shaping element, such as a window element or a raised rim, is placed at the aperture to prevent or reduce a component of an electric field.

A method of detecting a defect in a device using a charged particle beam includes inputting a charged particle beam condition, a light condition, and electronic device circuit information, controlling a charged particle beam applied to a sample based on the electron beam condition, controlling light applied to the sample based on the light condition, detecting second electrons emitted from the sample by the application of the charged particle beam and the light, and generating a calculation netlist based on the electronic device circuit information, generating a light irradiation netlist based on the calculation netlist and the light condition, estimating a first irradiation result when the charged particle beam and the light are applied to the sample based on the light irradiation netlist and the charged particle beam condition, and comparing the first irradiation result with a second irradiation result when the charged particle beam and the light are actually applied to the sample based on the electron beam condition.

Parts of a pair, in use, are disposed in abutting relation to one another to define a cell for use with an electron microscope, the cell having, disposed on opposite surfaces thereof, a pair of windows, the windows being arranged in spaced relation to one another to define a viewable interior volume of the cell at a region of overlap. A housing is adapted to receive one of the pair of parts and further adapted to define a chamber containing the one of the parts which chamber, in use, is evacuated. An arrangement is adapted, when the one of the parts is received by the housing and is in receipt of a sample and the chamber is evacuated, to position together the one of the pair of parts and the other of the pair of parts.

A method and an integrated system. The integrated system can include an optical inspection unit, a charged particle device, an interface unit, and at least one controller.

A wafer inspection system includes a controller in communication with an electron-beam inspection tool. The controller includes circuitry to: acquire, via an optical imaging tool, coordinates of defects on a sample; set a Field of View (FoV) of the electron-beam inspection tool to a first size to locate a subset of the defects; determine a position of each defect of the subset of the defects based on inspection data generated by the electron-beam inspection tool during a scanning of the sample; adjust the coordinates of the defects based on the determined positions of the subset of the defects; and set the FoV of the electron-beam inspection tool to a second size to locate additional defects based on the adjusted coordinates.

An electron microscope includes: a laser light source configured to generate a CW laser; an irradiation lens system configured to irradiate a measurement sample with the CW laser; an energy analyzer configured to disperse, depending on energy, photoelectrons emitted from the measurement sample by irradiation with the CW laser; an energy slit configured to allow a photoelectron with a specified energy to pass, among the photoelectrons; an electron beam detector configured to detect the photoelectron passed through the energy slit; a first electron lens system configured to focus the photoelectrons emitted from the measurement sample onto the energy analyzer; and a second electron lens system configured to project the photoelectron passed through the energy slit onto the electron beam detector.

An electron beam inspection system is disclosed, in accordance with one or more embodiments of the present disclosure. The inspection system may include an electron beam source configured to generate one or more primary electron beams. The inspection system may also include an electron-optical column including a set of electron-optical elements configured to direct the one or more primary electron beams to a sample. The inspection system may further include a detection assembly comprising: a scintillator substrate configured to collect electrons emanating from the sample, the scintillator substrate configured to generate optical radiation in response to the collected electrons; one or more light guides; one or more reflective surfaces configured to receive the optical radiation and direct the optical radiation along the one or more light guides; and one or more detectors configured to receive the optical radiation from the light guide.