To provide an ion gun of a penning discharge type capable of narrowing a beam with a low ion beam current at a low acceleration voltage, an ion milling device including the same, and an ion milling method. An ion milling device that controls half width of a beam profile of an ion beam with which a sample is irradiated from an ion gun to be in a range of 200 m to 350 m. The device includes: the ion gun that ionizes a gas supplied from the outside, and emits an ion beam; a gas-flow-rate varying unit that varies a flow rate of the gas supplied to the ion gun; and a current measurement unit that measures a current value of the ion beam emitted from the ion gun. The gas-flow-rate varying unit sets a gas flow rate to be higher than a gas flow rate at which the ion beam current has a maximum value based on the current value measured by the current measurement unit and the flow rate of the gas determined by the gas-flow-rate varying unit.

A system and method for monitoring glitch frequency and energy is disclosed. The system includes a glitch capture module that monitors the voltage of a biased component and captures any glitches that occur. The glitch capture module also extends the duration of that glitch so that the controller is guaranteed to observe this glitch. In certain embodiments, the glitch capture module captures the maximum energy of the glitch by storing the minimum voltage, in terms of magnitude, of the glitch.

A multi-beam particle microscope can provide improved beam current control. Excess electrons discharged from one or just a few regions of an absorber layer provided on a multi-aperture array can be measured via an ammeter. The measured currents can be used as controlled variables in a closed loop control. The measurement can be large-area and low-noise. The multi-aperture array can be specifically structured to also realize a direction sensitive detection, for example via a quadrant detector or a tertial detector.

An assembly for preventing an overdose of a charged particle beam during therapy to a patient includes a pixelated detector apparatus and a controller. The controller includes, for each pixel: a current integrator circuit that converts the local measured current into a total local detected charge integrated from a start time, the integrator circuit outputting an integrator voltage that corresponds to the total local detected charge; and a discriminator circuit that compares the integrator voltage with a reference voltage, the reference voltage corresponding to a maximum acceptable dose for the patient. A logic circuit generates an overdose fault signal if, at any of the pixels, the integrator voltage is higher than the reference voltage.

An electron beam detection element includes a control unit configured to cause a diode to transition from an inactive state to an active state in response to a change of signal level of a control signal for causing an electron gun to change from an inactive state to an active state.

In one embodiment, an ion implantation apparatus includes an ion source configured to generate an ion beam. The apparatus further includes a scanner configured to change an irradiation position with the ion beam on an irradiation target. The apparatus further includes a first electrode configured to accelerate an ion in the ion beam. The apparatus further includes a controller configured to change at least any of energy and an irradiation angle of the ion beam according to the irradiation position by controlling the ion beam having been generated from the ion source.

An object of the present invention is to provide an ion milling apparatus capable of processing deposits attached to an ion gun and an ion milling method capable of processing deposits attached to an ion gun. The ion milling apparatus includes gas injection means for injecting a gas toward the ion gun, and the gas injection means included in the ion milling apparatus moves the deposits attached to the ion gun by injecting the gas toward the inside of the ion gun.

The present disclosure relates to a method and system for adjusting a focal point position of an X-ray tube. The method may include: obtaining a first thermal capacity and a first position of a focal point of an X-ray tube; obtaining a second thermal capacity of the X-ray tube; determining a second position of the focal point the X-ray tube based on the second thermal capacity; determining a target grid voltage difference of a focusing cup of the X-ray tube based on the first position and the second position of the focal point; and adjusting the X-ray tube based on the target grid voltage difference.

Provided is a semiconductor plasma antenna apparatus. The apparatus includes: a cell array unit in which a plurality of PIN diode cells are arranged, and in which a cell pattern is formed by using a predefined PIN diode cell among the plurality of PIN diode cells; and a driver circuit unit configured to control a drive of the predefined PIN diode cell, wherein the driver circuit unit comprises: a direct-current conversion unit equipped with a DC-DC converter configured to drive a diode load of the cell pattern by applying an output voltage to a PIN diode cell corresponding to the cell patterns formed in the cell array unit; and a constant current controller configured to controlling a plasma concentration of the PIN diode cell by controlling a constant current for the diode load of the cell pattern.

According to one embodiment, an X-ray system includes an X-ray tube including a filament in which a filament current according to a tube current flows, a filament current monitoring unit monitoring the filament current, a tube current monitoring unit monitoring the tube current, and an inspection unit determining whether the tube current falls within a predetermined set range in X-ray emission.