A pattern according to an embodiment includes first and second line patterns, each of the first and second line patterns extends in a direction intersecting a <111> direction and has a side surface, the side surface has at least one {111} crystal plane, the side surface of the first line pattern has a first roughness, and the side surface of the second line pattern has a second roughness larger than the first roughness.

A method for chemical identification of a sample having nanostructures includes the steps of irradiating the surface at wavelengths for each of a first and a second of the nanostructures that are uniquely absorbed by each of the first nanostructure and the second nanostructure such that each is excited to modulate at a first or a second nanostructure frequency, respectively. The method continues with the steps of irradiating the surface with electron beams incident on each of the first and second nanostructure, wherein at least one of secondary electrons, backscattered electrons and transmitted electrons are modulated at the frequency corresponding to each of the first and second nanostructure frequencies. A chemical map of the sample at an atomic scale is then created. A microscope is provided to carry out the method.

A charged particle beam device includes a charged particle source which emits a charged particle beam radiated on a sample; a condenser lens system which has at least one condenser lens focusing the charged particle beam at a predetermined demagnification; a deflector which is positioned between a condenser lens of a most downstream side and a charged particle source in the condenser lens system, and moves a virtual position of the charged particle source; and a control unit which controls the deflector and the condenser lens system. The control unit controls the deflector to move the virtual position of the charged particle source to a position of suppressing a deviation, which is caused by a change of the demagnification of the condenser lens system, of a center trajectory of the charged particle beam downstream of the condenser lens system.

An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.

Two types of operational parameters are used in a particle beam microscope. First parameters influence the image quality, and have settings that are alterable by a user in view of obtaining a better image quality. Second parameters characterize the mode of operation, and the image quality becomes poorer when these change. A mode of operation of the particle beam microscope includes: registering of settings of the first parameters and the second parameters, which the user undertakes in a period of time; analysing a plurality of recorded settings of the first parameters and of the second parameters; determining settings of the first parameters which are advantageous in view of the image quality on the basis of the current settings of the second parameters; and setting the determined advantageous settings of the first parameters.

A method for evaluating a secondary optical system of an electron beam inspection device provided with a primary optical system that irradiates a sample placed at an observation target position with an electron beam emitted from an electron source, and the secondary optical system that forms, on a detector, an enlarged image of an electron beam generated from the sample or an electron beam transmitted through the sample. The method includes: placing a photoelectric surface at the observation target position; irradiating the photoelectric surface with laser; forming an enlarged image of an electron beam generated from the photoelectric surface on the detector by the secondary optical system; and evaluating the secondary optical system based on an electron beam image obtained by the detector.

A reference sample (41) has a step/terrace structure made of monocrystalline SiC and a surface of each terrace has first or second stack orientation. In the reference sample (41), contrast as difference in lightness and darkness between an image of a terrace with a surface directly under which the first stack orientation lies and an image of a terrace with a surface directly under which the second stack orientation lies changes according to an incident electron angle which is an angle that an electron beam emitted from a scanning electron microscope forms with a perpendicular to the terrace surface. Even when a SiC substrate has an off angle (e.g., from 1 to 8), using an inclined support base (20a) capable of correcting the off angle enables sharp contrast that reflects difference between the first and second stack orientations directly under the surface to be obtained irrespective of the off angle.

Methods and systems for implementing laser-based phase plate image contrast enhancement are disclosed herein. An example method at least includes forming at least one optical peak in a diffraction plane of an electron microscope, and directing an electron beam through the at least one optical peak at a first location, where the first location determines an amount of phase manipulation the optical peak imparts to an electron of the electron beam.

A reference sample (41) has a step/terrace structure made of monocrystalline SiC and a surface of each terrace has first or second stack orientation. In the reference sample (41), contrast as difference in lightness and darkness between an image of a terrace with a surface directly under which the first stack orientation lies and an image of a terrace with a surface directly under which the second stack orientation lies changes according to an incident electron angle which is an angle that an electron beam emitted from a scanning electron microscope forms with a perpendicular to the terrace surface. Even when a SiC substrate has an off angle (e.g., from 1 to 8), using an inclined support base (20a) capable of correcting the off angle enables sharp contrast that reflects difference between the first and second stack orientations directly under the surface to be obtained irrespective of the off angle.

A fast method of imaging a 3D sample with a multi-beam particle microscope includes the following steps: providing a layer of the 3D sample; determining a feature size of features included in the layer; determining a pixel size based on the determined feature size in the layer; determining a beam pitch size between individual beams in the layer based on the determined pixel size; and imaging the layer of the 3D sample with a setting of the multi-beam particle microscope based on the determined pixel size and based on the determined beam pitch size.