An alignment system that realizes high reproducibility of position information during re-observation and in which a user can efficiently and easily re-observe an area of interest is provided. An alignment system that enables correlative observation between the imaging device 104 and the charged particle beam device 100, in which a plurality of positional alignment points are set on a sample carrier in a state where a sample is placed on the sample carrier, the alignment controller 153 obtains a transformation matrix that transforms a coordinate system of the imaging device and a coordinate system of the charged particle beam device based on position information and magnification of each of the plurality of positional alignment points when a first image is imaged by an imaging device and position information and magnification of each of a plurality of positional alignment points when observing by a charged particle beam device, and transforms a field of view designated for the first image into field-of-view information of the charged particle beam device by using the transformation matrix.

Disclosed herein are techniques directed toward a protective shutter for a charged particle microscope. An example apparatus at least includes a charged particle column and a focused ion beam (FIB) column, a gas injection nozzle coupled to a translation device, the translation device configured to insert the gas injection nozzle in close proximity to a stage, and a shutter coupled to the gas injection nozzle and arranged to be disposed between the sample and the SEM column when the gas injection nozzle is inserted in close proximity to the stage.

A charged-particle-beam microscope for imaging a sample, the microscope having a stage to hold a sample and an automated sample feeder to repeatedly and automatically exchange the sample from among a plurality of samples. A charged-particle-beam column is provided to direct a charged-particle-beam onto the sample, the charged-particle-beam column. The column includes a charged-particle-beam source to generate an electron beam and charged-particle-beam optics to converge the charged-particle beam onto the sample. A detector is provided to detect charged particles emanating from the sample to generate image data. A controller executes an artificial intelligence algorithm to analyze the image data.

Systems and methods of profiling a charged-particle beam are disclosed. The method of profiling a charged-particle beam may comprise activating a charged-particle source to generate the charged-particle beam along a primary optical axis, modifying the charged-particle beam by adjusting an interaction between the charged-particle beam and a standing optical wave, detecting charged particles from the modified charged-particle beam after the interaction with the standing optical wave, and determining a profile of the charged-particle beam based on the detected charged particles. Alternatively, the method may include activating an optical source, modifying the optical beam by adjusting an interaction between the optical beam and a charged-particle beam, detecting an optical signal from the modified optical beam, and determining a characteristic of the charged-particle beam based on the detected optical signal.

The present disclosure relates to dual beam device and three-dimensional circuit pattern inspection techniques by cross sectioning of inspection volumes with large depth extension exceeding 1 μm below the surface of a semiconductor wafer, as well as methods, computer program products and apparatuses for generating 3D volume image data of a deep inspection volume inside a wafer without removal of a sample from the wafer. The disclosure further relates to 3D volume image generation and cross section image alignment methods utilizing a dual beam device for three-dimensional circuit pattern inspection.

A fast method of imaging a 2D sample with a multi-beam particle microscope includes the following steps: providing a layer of the 2D sample; determining a feature size of features included in the layer; determining a pixel size based on the determined feature size in the layer; determining a beam pitch size between individual beams in the layer based on the determined pixel size; and imaging the layer of the 2D sample with a setting of the multi-beam particle microscope based on the determined pixel size and based on the determined beam pitch size.

A particle beam apparatus is used for imaging, processing and/or analyzing an object. A computer program product may be used to facilitate imaging, processing and/or analyzing the object. A magnification may be chosen from a first magnification range of the particle beam apparatus by driving a first amplifier unit and a second amplifier unit. If it is established that there are prerequisites which would actually result in the particle beam apparatus being switched to a different magnification from a second magnification range, the switching is avoided by feeding an analog amplifier signal from an amplifier unit to a scanning unit of the particle beam apparatus, guiding the particle beam over the object using the scanning unit, and imaging, processing and/or analyzing the object with the particle beam.

A charged particle assessment tool including: an objective lens configured to project a plurality of charged particle beams onto a sample, the objective lens having a sample-facing surface defining a plurality of beam apertures through which respective ones of the charged particle beams are emitted toward the sample; and a plurality of capture electrodes, each capture electrode adjacent a respective one of the beam apertures, configured to capture charged particles emitted from the sample.

A method of setting a parameter of a charged particle beam device, for shortening the time required to adjust an ABCC parameter. An inverse conversion processing unit generates a simulator input signal corresponding to an electron emitted from a sample. A simulation detector uses an arithmetic model that simulates a detector and executes arithmetic processing on the simulator input signal in a state in which characteristic information is reflected in an arithmetic parameter. A simulated image conversion unit executes arithmetic processing corresponding to an image conversion unit and converts a signal from the simulation detector into a simulated image. An ABCC search unit searches for an ABCC parameter with respect to the simulation detector so that an evaluation value obtained from the simulated image becomes a specified reference value, and outputs the ABCC parameter as a search result to an ABCC control unit of the actual machine.

A semiconductor analysis system includes a machining device that machines a semiconductor wafer to prepare a thin film sample for observation, a transmission electron microscope device that acquires a transmission electron microscope image of the thin film sample, and a host control device that controls the machining device and the transmission electron microscope device. The host control device evaluates the thin film sample based on the transmission electron microscope image, updates acquisition conditions of the transmission electron microscope image based on an evaluation result of the thin film sample, and outputs the updated acquisition conditions to the transmission electron microscope device