H01J37/268

Method and System for Weak Pattern Quantification
20180174797 · 2018-06-21 ·

A weak pattern identification method includes acquiring inspection data from a set of patterns on a wafer, identifying failing pattern types on the wafer, and grouping like pattern types of the failing pattern types into a set of pattern groups. The weak pattern identification method also includes acquiring image data from multiple varied instances of a first pattern type grouped in a first group, wherein the multiple varied instances of the first pattern type are formed under different conditions. The weak pattern identification method also includes comparing images obtained from common structures of the instances of the first pattern type to identify local differences within a portion of the first pattern type. Further, the weak pattern identification method includes identifying metrology sites within the portion of the first pattern type proximate to a location of the local differences within the portion of the first pattern type.

METHOD OF DETERMINING THE DEFLECTION OF AN ELECTRON BEAM RESULTING FROM AN ELECTRIC FIELD AND/OR A MAGNETIC FIELD

Method of determining a local electric field and/or a local magnetic field in a sample and/or the dielectric constant of a material and/or the angle between the input and output surfaces of the sample, comprising the following steps: illumination of the sample by an electron beam in precession mode using an illumination device, generation of a diffraction pattern, determination of the offset of the disk corresponding to the transmitted beam due to the electric field and/or the magnetic field, by comparison of the diffraction pattern and a reference diffraction pattern, determination of a deflection angle of the transmitted beam, determination of the value of the local electric field and/or the local magnetic field of the sample and/or determination of the dielectric constant of materials and/or determination of the angle between the input and output surfaces of the sample.

Charged particle microscope with vibration detection / correction

A method of using a Charged Particle Microscope comprising: A specimen holder, connected to a positioning stage, for holding a specimen; A source, for producing a beam of charged particles; An illuminator, for directing said beam so as to irradiate the specimen; A detector, for detecting a flux of radiation emanating from the specimen in response to said irradiation,
comprising the following steps: Providing the microscope with an interferential optical position sensor for determining a position of said specimen holder relative to a reference; Providing an automatic controller with a time-dependent position signal from said optical position sensor; Invoking said controller to use said signal to produce a vibration profile for the microscope.

Conductive fixation for electron microscopy
12224154 · 2025-02-11 · ·

Disclosed are compositions and methods for the conductive fixation of organic material, including biological samples. The compositions and methods described herein can address the problems of charging and sample damage caused by electron beam-sample interactions within an electron microscope.

Charged Particle System and Measuring Method
20170133196 · 2017-05-11 ·

There is provided a charged particle system capable of measuring deflection fields in a sample without using a segmented detector. The charged particle system (100) has: illumination optics (104) for illuminating the sample with charged particles; an imaging deflector system (112) disposed behind an objective lens (110) and operative to deflect the charged particles; a detector (116) having a detection surface (115) and operative to detect the charged particles incident thereon, imaging optics (114) disposed behind the imaging deflector system (112) and operative to focus the charged particles as diffraction discs (2) onto the detection surface (115); a storage unit (120) for storing intensity information detected by the detector (116); and a controller (130) for controlling the imaging deflector system (112). The controller (130) controls the imaging deflector system (112) to cause the charged particles passing through a given position of particle impingement on the sample to be deflected under successively different sets of deflection conditions and to bring the diffraction discs (2) into focus onto successively different regions of the detection surface (115). The storage unit (120) stores the intensity information for each set of the deflection conditions.

CHARGED PARTICLE MICROSCOPE WITH VIBRATION DETECTION / CORRECTION

A method of using a Charged Particle Microscope comprising: A specimen holder, connected to a positioning stage, for holding a specimen; A source, for producing a beam of charged particles; An illuminator, for directing said beam so as to irradiate the specimen; A detector, for detecting a flux of radiation emanating from the specimen in response to said irradiation,
comprising the following steps: Providing the microscope with an interferential optical position sensor for determining a position of said specimen holder relative to a reference; Providing an automatic controller with a time-dependent position signal from said optical position sensor; Invoking said controller to use said signal to produce a vibration profile for the microscope.

Electron beam irradiation method and scanning electron microscope

The present invention has for its object to provide a charged particle beam irradiation method and a charged particle beam apparatus which can suppress unevenness of electrification even when a plurality of different kinds of materials are contained in a pre-dosing area or degrees of density of patterns inside the pre-dosing area differs with positions. To accomplish the above object, a charged particle beam irradiation method and a charged particle beam apparatus are provided according to which the pre-dosing area is divided into a plurality of divisional areas and electrifications are deposited to the plural divisional areas by using a beam under different beam irradiation conditions. With the above construction, the electrifications can be deposited to the pre-dosing area on the basis of such an irradiation condition that the differences in electrification at individual positions inside the pre-dosing area can be suppressed and consequently, an influence an electric field has upon the charged particle beam and electrons given off from the sample can be suppressed.

HIGH VOLTAGE POWER SUPPLIES FOR FAST VOLTAGE CHANGES
20250125117 · 2025-04-17 ·

The disclosure describes a high voltage power supply and control system for electron beam tools. The system includes a primary DC source, one or more secondary regulated sources, and a fast power control interposed therebetween. The fast power control includes a transfer capacitor coupled to ground, a first fast power control, and a second fast power control. The first fast power control makes rapid and small adjustments to the total output provided to the secondaries and hence controls small adjustments to the tool, while the second fast power control makes proportional voltage or current changes of an opposing polarity to charge or discharge the transfer capacitor and thereby maintain charge balance relative to cable capacitances of cables connecting the high voltage power source to the tool. The system can be used with electron beam tools such as scanning electron microscopes, electron beam inspection tools, or electron lithography tools.

Automated sample alignment for microscopy
12362137 · 2025-07-15 · ·

Systems and methods for automated sample alignment for microscopy are described herein. In one aspect a method can include: rotating the sample along a first axis by each of a plurality of rotation angles; imaging, with a charged particle beam, the sample for each rotation angle; and determining a first rotation angle based on the image for each rotation angle, wherein the first rotation angle aligns the sample to the charged particle beam in relation to the first axis.

Charged particle beam apparatus and image adjustment method
12362134 · 2025-07-15 · ·

Provided is a charged particle beam apparatus that acquires an image by scanning a specimen with a charged particle beam, and includes a contrast adjustment circuit that adjusts contrast of the image; a brightness adjustment circuit that adjusts brightness of the image; and a control unit that controls the contrast adjustment circuit and the brightness adjustment circuit. The control unit acquires information on luminance of a reference image in a non-signal state, and information on an average value of luminance of each pixel of the reference image, controls the brightness adjustment circuit, based on the acquired information on luminance of the reference image in a non-signal state, acquires the image in a state where the brightness adjustment circuit is controlled, and adjusts the contrast of the acquired image by controlling the contrast adjustment circuit, based on the average value of luminance of each pixel of the reference image.