Lithographic apparatuses suitable for complementary e-beam lithography (CEBL) are described. In an example, a method of forming a pattern for a semiconductor structure includes forming a pattern of parallel lines above a substrate. The method also includes aligning the substrate in an e-beam tool to provide the pattern of parallel lines parallel with a scan direction of the e-beam tool. The e-beam tool includes a column having a blanker aperture array (BAA) with a staggered pair of columns of openings along an array direction orthogonal to the scan direction. The method also includes forming a pattern of cuts or vias in or above the pattern of parallel lines to provide line breaks for the pattern of parallel lines by scanning the substrate along the scan direction. A cumulative current through the column has a non-zero and substantially uniform cumulative current value throughout the scanning.

Methods include directing a group of ions through a separation region of an ion manipulation apparatus, separating the group of ions in the separation region based on ion mobility, selecting a subset of the group of ions based on a dependence between ion mobility and ion arrival time of the separated ions at a deposition switch of the ion manipulation apparatus, and depositing the selected subset of ions on a substrate. Related systems and ion manipulation apparatus are disclosed. Also disclosed are methods and system that provide concurrent ion accumulation and ion separation in coupled and switchable electrode regions using traveling wave electric fields.

An apparatus may include a scanner, arranged to receive an ion beam, and arranged to deliver a scan signal, defined by a scan period, to scan the ion beam between a first beamline side and a second beamline side. The apparatus may include a corrector module, disposed downstream of the scanner, and defining a variable path length for the ion beam, between the first beamline side and the second beamline side, wherein a difference in propagation time between a first ion path along the first beamline side and a second ion path along the second beamline side is equal to the scan period.

Embodiments herein are directed to a resonator for an ion implanter. In some embodiments, a resonator may include a housing, and a first coil and a second coil partially disposed within the housing. Each of the first and second coils may include a first end including an opening for receiving an ion beam, and a central section extending helically about a central axis, wherein the central axis is parallel to a beamline of the ion beam, and wherein an inner side of the central section has a flattened surface.

A height measuring device includes a light source that emits light in a direction oblique to a top surface of a specimen, a slit that shapes the light from the light source to form a slit image on the specimen, an imaging element that detects reflected light reflected by the specimen, and an arithmetic unit. The arithmetic unit: identifies a slit image of the reflected light reflected by the top surface of the specimen from among a plurality of slit images based on respective positions of the plurality of slit images on a detection surface of the imaging element; and determines the height of the top surface of the specimen based on the position of the slit image of the reflected light reflected by the top surface of the specimen on the detection surface.

A test control port (TCP) includes a state machine SM, an instruction register IR, data registers DRs, a gating circuit and a TDO MX. The SM inputs TCI signals and outputs control signals to the IR and to the DR. During instruction or data scans, the IR or DRs are enabled to input data from TDI and output data to the TDO MX and the top surface TDO signal. The bottom surface TCI inputs may be coupled to the top surface TCO signals via the gating circuit. The top surface TDI signal may be coupled to the bottom surface TDO signal via TDO MX. This allows concatenating or daisy-chaining the IR and DR of a TCP of a lower die with an IR and DR of a TCP of a die stacked on top of the lower die.

Provided herein are approaches for angle control of neutral reactive species ion beams. In one approach, a workpiece processing apparatus may include a plasma source operable to generate a plasma within a plasma chamber enclosed by a chamber housing, and an extraction plate coupled to the chamber housing. The extraction plate may include a plurality of channels for delivering one or more radical beams to a workpiece, wherein each of the plurality of channels has a lengthwise axis oriented at a non-zero angle relative to a perpendicular extending from a main surface of the workpiece, wherein each channel of the plurality of channels has a channel length and a channel width, and wherein the channel width varies along the channel length.

The invention relates to charged particle beam generator comprising a charged particle source for generating a charged particle beam, a collimator system comprising a collimator structure with a plurality of collimator electrodes for collimating the charged particle beam, a beam source vacuum chamber comprising the charged particle source, and a generator vacuum chamber comprising the collimator structure and the beam source vacuum chamber within a vacuum, wherein the collimator system is positioned outside the beam source vacuum chamber. Each of the beam source vacuum chamber and the generator vacuum chamber may be provided with a vacuum pump.

A test control port (TCP) includes a state machine SM, an instruction register IR, data registers DRs, a gating circuit and a TDO MX. The SM inputs TCI signals and outputs control signals to the IR and to the DR. During instruction or data scans, the IR or DRs are enabled to input data from TDI and output data to the TDO MX and the top surface TDO signal. The bottom surface TCI inputs may be coupled to the top surface TCO signals via the gating circuit. The top surface TDI signal may be coupled to the bottom surface TDO signal via TDO MX. This allows concatenating or daisy-chaining the IR and DR of a TCP of a lower die with an IR and DR of a TCP of a die stacked on top of the lower die.

An ion implantation system, including an ion source and extraction system, arranged to generate an ion beam at a first energy, and a linear accelerator, disposed downstream of the ion source, the linear accelerator arranged to receive the ion beam as a bunched ion beam accelerate the ion beam to a second energy, greater than the first energy. The linear accelerator may include a plurality of acceleration stages, wherein a given acceleration stage of the plurality of acceleration stages comprises: a drift tube assembly, arranged to conduct the ion beam; a resonator, electrically coupled to the drift tube assembly; and an RF power assembly, coupled to the resonator, and arranged to output an RF signal to the resonator. As such, the given acceleration stage does not include a quadrupole element.