A charged particle beam apparatus which automatically prepares a sample piece from a sample, includes: a charged particle beam irradiation optical system configured to perform irradiation of a charged particle beam; a sample stage configured to move, the sample being placed on the sample stage; a sample piece relocation unit configured to hold and transport the sample piece which is separated and picked up from the sample; a holder fixing stage which holds a sample piece holder to which the sample piece is relocated; and a computer which performs positional control in relation to a target object based on a template and positional information which is obtained from an image of the target object, the template being generated based on an absorption current image of the target object which is acquired using the irradiation of the charged particle beam.

An electron microscope includes: a sample holder; a first optical system irradiating and scanning the sample; an electron detection unit detecting secondary electrons discharged from the sample; a first vacuum chamber which holds the sample holder, the first optical system, and the electron detection unit in a vacuum atmosphere; a display unit displaying a microscopic image of the sample; and a control unit which controls the sample holder and the operation of the first optical system. The electron microscope includes a second vacuum chamber different from the first vacuum chamber, and a second optical system in the second vacuum chamber and is different from the first optical system. The second optical system and the control unit are capable of mutual communication, and the second vacuum chamber has a state changing means which changes the state of the sample.

An ion implantation method includes acquiring a first data set for setting beam energy of an ion beam output from the high energy multi-stage linear acceleration unit to be a first output value, determining a second data set for setting the beam energy of the ion beam output from the high energy multi-stage linear acceleration unit to be a second output value different from the first output value, based on the first data set, and performing ion implantation by irradiating a workpiece with the ion beam output from the high energy multi-stage linear acceleration unit operating in accordance with the second data set. An acceleration phase of the high frequency accelerator in each of the plurality of stages is the same between the first data set and the second data set, in all of the high frequency accelerators respectively in the plurality of stages.

Embodiments described herein relate to methods of forming gratings with different slant angles on a substrate and forming gratings with different slant angles on successive substrates using angled etch systems. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle θ relative to a surface normal of the substrates and form gratings in the grating material. The substrates are rotated about an axis of the platen resulting in rotation angles ϕ between the ion beam and a surface normal of the gratings. The gratings have slant angles θ′ relative to the surface normal of the substrates. The rotation angles ϕ selected by an equation ϕ=cos.sup.−1(tan(θ′)/tan(θ)).

A writing data generating method for generating writing data used in a multi charged particle beam writing apparatus, that can suppress a data amount and a calculation amount in a multi charged particle beam writing apparatus generated from design data including a figure having a curve. The method includes calculating a pair of curves each representing a curve portion of a figure included in design data, the curves each being defined by a plurality of control points, and generating the writing data by expressing a position of a second control point adjacent in a traveling direction of the curve to a first control point of the plurality of control points as a displacement from the first control point in the traveling direction of the curve and a displacement from the first control point in a direction orthogonal to the traveling direction.

An ion implantation method includes changing an ion acceleration energy and/or an ion beam current density of an ion beam while effecting a relative movement between a semiconductor substrate and the ion beam impinging on a surface of the semiconductor substrate.

To accomplish fast automated micro-sampling, provided is a charged particle beam apparatus, which is configured to automatically fabricate a sample piece from a sample, the charged particle beam apparatus including: a charged particle beam irradiation optical system configured to radiate a charged particle beam; a sample stage configured to move the sample that is placed on the sample stage; a sample piece transportation unit configured to hold and convey the sample piece separated and extracted from the sample; a holder fixing base configured to hold a sample piece holder to which the sample piece is transported; and a computer configured to perform position control with respect to a second target, based on a machine learning model in which first information including a first image of a first target is learned, and on second information including a second image, which is obtained by irradiation with the charged particle beam.

A computer-implemented method of generating scan instructions for forming a product using additive layer manufacture as a series of layers is provided. The method comprises determining a beam acceleration voltage to be used when forming the product; for each hatch area of layers of the product, determining a respective beam current to be used when forming the hatch area and providing a respective beam current value to the hatch area description in the scan pattern instruction file; and for each line of each hatch area, determining a respective beam spot size to be used when scanning the beam along the line and providing a respective beam spot size value to the line description in the scan pattern instruction file, and determining a respective series of beam step sizes and beam step dwell times to be used when scanning the beam along the line, and providing a respective series of beam position values and beam step dwell times to the line description in the scan pattern instruction file thereby defining how the beam is to be scanned along the line. Also provided are a file of scan instructions, an additive layer manufacture apparatus, and a method of forming a product using the additive layer manufacturing apparatus.

A method includes operating a multiple particle beam system at different working points. The numerical aperture can be set for each of the working points in such a way that the resolution of the multiple particle beam system is optimal. In the process, the beam pitch between adjacent individual particle beams on the sample to be scanned is kept constant as a boundary condition. There are no mechanical reconfigurations of the system whatsoever for the purposes of varying the numerical aperture.

A method, system, and computer-readable medium for forming transmission electron microscopy sample lamellae using a focused ion beam including directing a high energy focused ion beam toward a bulk volume of material; milling away the unwanted volume of material to produce an unfinished sample lamella with one or more exposed faces having a damage layer; characterizing the removal rate of the focused ion beam; subsequent to characterizing the removal rate, directing a low energy focused ion beam toward the unfinished sample lamella for a predetermined milling time to deliver a specified dose of ions per area from the low energy focused ion beam; and milling the unfinished sample lamella with the low energy focused ion beam to remove at least a portion of the damage layer to produce the finished sample lamella including at least a portion of the feature of interest.