An ion implanter may include an ion source, arranged to generate a continuous ion beam, a DC acceleration system, to accelerate the continuous ion beam, as well as an AC linear accelerator to receive the continuous ion beam and to output a bunched ion beam. The ion implanter may also include an energy spreading electrode assembly, to receive the bunched ion beam and to apply an RF voltage between a plurality of electrodes of the energy spreading electrode assembly, along a local direction of propagation of the bunched ion beam.

Provided is a substrate holding device comprising: a holder that holds a substrate irradiated with an ion beam; and a driving device that rotates the holder around a predetermined axis to change an inclination of the held substrate with respect to the ion beam, wherein the driving device comprises: a power source that outputs power to rotate the holder; a reduction gear provided in the middle of a power transmission path from the power source to the holder; a first shaft member that rotates together with the holder by a power outputted from the reduction gear; a first detector that detects a rotational motion of the first shaft member; and a power control device that controls the power source based on a detection value of the first detector.

An ion implantation has an ion source and a mass analyzer configured to form and mass analyze an ion beam. A bending element is positioned downstream of the mass analyzer, and respective first and second measurement apparatuses are positioned downstream and upstream of the bending element and configured to determine a respective first and second ion beam current of the ion beam. A workpiece scanning apparatus scans the workpiece through the ion beam. A controller is configured to determine an implant current of the ion beam at the workpiece and to control the workpiece scanning apparatus to control a scan velocity of the workpiece based on the implant current. The determination of the implant current of the ion beam is based, at least in part, on the first ion beam current and second ion beam current.

An ion implanter includes: a plurality of devices which are disposed along a beamline along which an ion beam is transported; a plurality of neutron ray measuring instruments which are disposed at a plurality of positions in the vicinity of the beamline and measure a neutron ray from a neutron ray source which is generated in the beamline due to collision of a high-energy ion beam; and a control device which monitors at least one of the plurality of devices, based on a plurality of measurement values measured by the plurality of neutron ray measuring instruments.

A magnet having an annular coolant fluid passage is generally described. Various examples provide a magnet including a first magnet and a second magnet disposed around an ion beam coupler with an aperture there through. The first and second magnets each including a metal core having a cavity therein, one or more conductive wire wraps disposed around the metal core, and an annular core element configured to be inserted into the cavity, wherein an annular coolant fluid passage is formed between the cavity and the annular core element. Furthermore, the annular core element may have a first diameter and a middle section having a second diameter, the second diameter being less than the first diameter. Other embodiments are disclosed and claimed.

An ion source uses at least one induction coil to generate ac magnetic field to couple rf/VHF power into a plasma within a vessel, where the excitation coil may be a single set of turns each turn having lobes or multiple separate sets of windings. The excitation coil is positioned outside and proximate that side of the vessel that is opposite to the extraction slit, and elongated parallel to the length dimension of the extraction slit. The conducting shield(s) positioned outside or integrated with the well of the vessel are used to block the capacitive coupling to the plasma and/or to collect any rf/VHF current may be coupled into the plasma. The conducting shield positioned between the vessel and the coil set can either shield the plasma from capacitive coupling from the excitation coils, or be tuned to have a higher rf/VHF voltage to ignite or clean the source.

A method for forming a semiconductor structure includes forming a pattern having first and second line features extending in a first direction on a substrate. After depositing a photoresist layer on the substrate to cover the pattern, the photoresist layer is patterned to form a cut pattern including first and second cut features exposing portions of the respective first and second line features. In a top view, at least one of the first and second cut features is asymmetrically arranged with respect to a central axis of a corresponding first or second line feature. At least one angled ion implantation is performed to enlarge the first and second cut features in at least one direction perpendicular to the first direction. The portions of the first and second line features exposed by the respective first and second cut features are then removed.

An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. The ion source has a solid-state material source having aluminum iodide in a solid form. A solid source vaporizer vaporizes the aluminum iodide, defining gaseous aluminum iodide. An arc chamber forms a plasma from the gaseous aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A water vapor source further introduces water to react residual aluminum iodide to form hydroiodic acid, where the residual aluminum iodide and hydroiodic acid is evacuated from the system.

An ion implantation device (20) comprising an energy filter (25), wherein the energy filter (25) has a thermal energy dissipation surface area, wherein the energy filter (25) comprises a membrane with a first surface and a second surface disposed opposite to the first surface, the first surface being a structured surface.

An ion implantation device (20) is provided comprising an energy filter (25) with a structured membrane, wherein the energy filter (25) is heated by absorbed energy from the ion beam, and at least one additional heating element (50a-d, 55a-d, 60, 70) for heating the energy filter (25).